MRF1K50HR5178 - 1500W RF LDMOS Transistor, 1.8-500 MHz, 50V | NXP
부품 번호: MRF1K50HR5178 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $980 | $980.00 |
| 10 | $920 | $9,200.00 |
| 50 | $880 | $44,000.00 |
| 100 | $845 | $84,500.00 |
| 250 | $810 | $202,500.00 |
MRF1K50HR5178 개요
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET optimized for radio-frequency amplification. Compared to standard power MOSFETs, RF LDMOS devices are designed with low parasitic capacitance and high gain at RF frequencies, making them the dominant technology for high-power RF amplification in the HF, VHF, and UHF bands. LDMOS devices typically integrate electrostatic discharge (ESD) protection and are built on ceramic flanged packages for efficient thermal dissipation. The MRF1K50HR5178 is built to withstand severe mismatch conditions (high VSWR) without performance degradation, which is critical in industrial heating, plasma generation, and broadcast transmitter environments where load impedance can vary dramatically.
Distinguishing features of the MRF1K50HR5178 include its very high VSWR ruggedness for industrial generator loads, a single-package CW solution at 1500 W, and an unmatched input/output design that allows broad frequency reuse from 1.8 MHz through 500 MHz. The ceramic NI-1230H package provides low thermal resistance for direct mounting to heatsinks or water-cooled cold plates, with the flange serving as the drain electrical connection.
Typical applications span CW and pulsed industrial RF generators for plastic welding and plasma excitation, HF/VHF TV and radio broadcast transmitters, sub-GHz aerospace communication links, and mobile radio base station power amplifiers. The wide bandwidth also makes it well suited for particle accelerator drivers and scientific instrumentation.
When designing with this part, ensure a sufficient 50 V DC supply and a low-impedance thermal mounting surface. Use NXP's reference PCB layout and matching network examples from the datasheet to achieve optimal efficiency and gain in the target band. Decoupling of the drain supply close to the package flange is critical for stable operation.
The MRF1K50HR5178 is currently cataloged under Rochester Electronics for legacy Freescale/NXP inventory; refer to the original NXP datasheet for parametric limits. For applications demanding alternative frequencies or lower power levels within the Airfast family, designers should consult related Airfast datasheets.
This page synthesizes real-time distributor pricing, parametric specifications, and practical design guidance for engineers integrating the MRF1K50HR5178 into RF power amplifier systems.
드롭인 대체품: MRF1K50HR5178 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF1K50H
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF1K50HR5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF1K50HR5178 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors |
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | RF Power LDMOS, High Ruggedness |
| Application Band | HF/VHF/UHF (1.8 MHz to 500 MHz) |
| Drain-Source Voltage (V DSS) | 50 V |
| Output Power (CW) | 1500 W |
| Frequency Range | 1.8 MHz to 500 MHz |
| 패키지 / 케이스 | NI-1230H (ceramic, flanged) |
| 실장 유형 | Chassis / Flange Mount (through-hole ceramic) |
| Configuration | Single-ended, unmatched input/output |
| VSWR Ruggedness | High VSWR tolerance for industrial loads |
| Polarity / Channel | N-Channel |
| Operating Mode | CW (continuous wave) and pulsed |
| MSL 레벨 | Not applicable (through-hole ceramic package) |
MRF1K50HR5178 핀 구성
| 핀 1 | GATE — RF input gate lead (unmatched) |
| 핀 2 | DRAIN / FLANGE — RF output drain and DC supply, also the package mounting flange and thermal interface |
| 핀 3 | SOURCE — Source lead, internally bonded to package body / flange |
RF Power Dissipation (Pdiss) vs VSWR (Industrial Load Tolerance)
일반적인 애플리케이션
MRF1K50HR5178 적합 용도: 6 애플리케이션s: Industrial RF Heating and Plastic Welding, Plasma Excitation and Scientific RF Generators, HF/VHF Broadcast Transmitters, Sub-GHz Aerospace Communication Links, Mobile Radio Base Station Power Amplifiers, Particle Accelerator and Scientific Research Drivers.
Industrial RF Heating and Plastic Welding
The MRF1K50HR5178's 1500 W CW capability and very high VSWR ruggedness make it ideal for industrial RF heating and plastic welding generators. Its unmatched 1.8-500 MHz bandwidth covers both 27 MHz and 40.68 MHz ISM bands commonly used for industrial welders. The 50 V drain supply delivers high DC-to-RF efficiency, reducing cooling demand in continuous-duty production lines. Against reactive loads typical of dielectric heating, the device's high-VSWR tolerance prevents thermal runaway and survives momentary load arcs that would destroy conventional RF MOSFETs. Reference designs in the NXP datasheet show broadband transformer matching networks suitable for direct integration into plastic welding heads and RF heat-sealing equipment.
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Plasma Excitation and Scientific RF Generators
Plasma excitation drivers and laboratory RF generators require sustained 1500 W CW output into highly reactive, time-varying loads. The MRF1K50HR5178 is designed exactly for this environment, with ruggedness margins that handle rapid impedance swings from plasma ignition to steady-state glow. Its 1.8-500 MHz operating window allows use in 13.56 MHz semiconductor etch reactors as well as higher-frequency plasma research tools. The ceramic NI-1230H flange can be directly water-cooled via a cold plate, dissipating the multi-hundred-watt heat loads of CW plasma operation. NXP's reference amplifier schematics provide matching network starting points tuned for 50 ohm source/load, simplifying integration into existing plasma source platforms.
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HF/VHF Broadcast Transmitters
High-power HF and VHF broadcast transmitters rely on broadband RF amplifier stages capable of 1000+ W CW output. The MRF1K50HR5178's wide 1.8-500 MHz range covers AM broadcast (below 30 MHz), shortwave broadcast, and VHF FM bands in a single device, simplifying transmitter designs that must work across multiple bands. With 1500 W CW output at 50 V supply and high gain, the part can drive antenna systems directly with minimal combining networks. Its NXP Airfast ruggedness ensures reliability in remote broadcast sites where service calls are expensive. Reference broadcast amplifier designs in the datasheet provide harmonic filter starting points for regulatory compliance.
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Sub-GHz Aerospace Communication Links
Sub-GHz aerospace and avionics communication systems need RF power stages that survive vibration, temperature extremes, and load mismatch in flight. The MRF1K50HR5178's ceramic NI-1230H package is bolted directly to a chassis or cold plate for mechanical stability, and its lateral MOSFET construction handles the wide temperature swings of aerospace environments. Its 1500 W CW rating supports high-power data links and radar excitation at frequencies below 500 MHz. The NXP Airfast reference designs include vibration-tolerant PCB examples. Designers should size the heatsink for worst-case continuous operation and apply conformal coating for humidity protection in airborne platforms.
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Mobile Radio Base Station Power Amplifiers
High-power mobile radio base stations need broadband RF power amplifiers capable of 1500 W CW output across multiple land-mobile bands below 500 MHz. The MRF1K50HR5178's unmatched inputs and outputs allow a single amplifier design to be tuned across VHF land-mobile, UHF business band, and adjacent public-safety frequencies without major hardware changes. NXP Airfast's reputation in commercial telecom infrastructure brings proven reliability and predictable MTBF to base-station installations. The 50 V supply rail aligns with standard -48 V telecom bus systems stepped up via DC-DC converters. Reference power amplifier modules in the datasheet provide layout guidance for multi-MHz bandwidth operation.
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Particle Accelerator and Scientific Research Drivers
Particle accelerator RF cavities and high-field scientific apparatus require stable, high-CW power sources with exceptional reliability. The MRF1K50HR5178 supplies 1500 W CW into cavity loads at frequencies from 1.8-500 MHz, covering many research-band RF systems including synchrotron and cyclotron drivers. The high VSWR ruggedness allows operation near cavity resonance where reflected power peaks. NXP Airfast's characterization gives physics researchers predictable, repeatable power delivery, critical for experimental reproducibility. The flanged ceramic package can be directly mounted to laboratory cooling water systems for continuous CW operation at full rated power.
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추천 제품 요약
엔지니어링 참조 데이터: MRF1K50HR5178 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF1K50H | MRF1K50HR5 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-1230H (ceramic flange) | NI-1230H (ceramic flange) - same | NI-1230H (ceramic flange) - same |
| Output Power (CW) | 1500 W | 1500 W | 1500 W |
| Frequency Range | 1.8 MHz to 500 MHz | 1.8 MHz to 500 MHz | 1.8 MHz to 500 MHz |
| Drain-Source Voltage | 50 V | 50 V | 50 V |
| Technology | RF Power LDMOS, N-Channel | RF Power LDMOS, N-Channel | RF Power LDMOS, N-Channel |
| VSWR Ruggedness | High (industrial grade) | High (industrial grade) | High (industrial grade) |
| Input/Output Matching | Unmatched | Unmatched | Unmatched |
주요 차별점
- Same NI-1230H package and identical die as base Airfast part (vs MRF1K50H)
설계 노트
At 1500 W CW output and typical 65-70% RF-to-DC efficiency, the MRF1K50HR5178 dissipates roughly 600-800 W internally. The NI-1230H ceramic flange must be bolted to a heatsink or water-cooled cold plate capable of keeping the flange temperature below 70 C in continuous operation. Estimated: at 700 W dissipation and a junction-to-flange thermal resistance around 0.05 C/W, junction rise over flange is approximately 35 C; adequate heatsink design is the dominant reliability factor.
Place drain supply decoupling capacitors within 25 mm of the NI-1230H flange footprint to minimize parasitic inductance that can cause drain-voltage ringing and reduced RF efficiency. The gate and drain RF leads should be routed as short, controlled-impedance traces (typically 50 ohm microstrip on the chosen PCB substrate). Reference PCB layouts in the NXP datasheet provide starting dimensions for 1.6 mm FR-4 and 0.8 mm ceramic substrates.
Do not exceed the 50 V maximum drain-source voltage rating or the device will suffer avalanche breakdown and possible destruction. Always include a sequenced gate bias ramp (typically -5 V to +2 V on the bias line) during power-up and power-down to prevent uncontrolled RF drive. For high-VSWR industrial loads, verify the output matching network includes a harmonic filter to meet regulatory emissions limits in broadcast bands.
규정 준수 정보
Compliance data (RoHS / REACH / lead-free / halogen-free / conflict-minerals) is not present in the Verified Web Data provided; the MRF1K50HR5178 / NI-1230H ceramic flange package requires direct confirmation with NXP or Rochester Electronics. AEC-Q100 is not applicable - this is an industrial/aerospace RF power transistor, not an automotive-grade part.
