MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP
부품 번호: MRF377HR3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $88.5 | $885.00 |
| 100 | $78 | $7,800.00 |
| 500 | $72 | $36,000.00 |
| 1,000 | $68.5 | $68,500.00 |
MRF377HR3 개요
An RF power MOSFET is a discrete transistor optimized to deliver significant continuous or pulsed RF output power at high frequencies, typically used as the final amplification stage in a transmitter chain. Lateral N-channel enhancement-mode MOSFETs combine a low-loss silicon die structure with a high-impedance gate, enabling high gain and broadband matching in a single die. Within the wider semiconductor taxonomy, RF power MOSFETs belong to the discrete power transistor family (MOSFET > transistor > discrete semiconductor), distinct from small-signal MOSFETs used for switching or analog signal processing. Their high drain voltage tolerance (32 V or more) and matched input/output impedances make them the workhorse of UHF/VHF broadcast, industrial RF heating, and avionics transmitter designs.
The MRF377HR3 offers broadband performance across the entire 470-860 MHz UHF television band, eliminating band-specific matching networks and reducing tuner count in multi-band transmitters. Its 45 W CW power capability at 32 V provides ample margin for DVB-T, ATSC, and ISDB-T transmitter outputs, while its internally matched push-pull configuration halves the matching complexity for the designer. The 18.2 dB typical gain reduces driver-stage gain requirements, allowing simpler and less expensive exciter chains. Push-pull operation also inherently suppresses even-order harmonics, improving spectral purity without additional filtering.
Typical deployments include UHF digital television transmitters in the 470-862 MHz broadcast band, broadband industrial RF heating and plasma generation systems, and avionics/PMR linear amplifier stages where broadband matching is valued. The device's combination of high gain and broadband response also suits scientific and medical RF applications such as MRI RF amplifiers and particle accelerator drivers operating in the UHF range.
Designers should note the device is rated for push-pull operation only - a single-ended bias configuration will not deliver the rated 45 W output and may damage the die. Adequate RF Choke selection, low-loss transmission-line matching, and a robust 32 V DC supply with sub-millisecond overcurrent protection are essential to keep junction temperature within the 200 C maximum rating. The NI-860C3 ceramic flange must be bolted to a heatsink with the specified torque and thermal compound to maintain the rated thermal resistance.
This page consolidates manufacturer datasheet figures, distributor pricing, drop-in alternatives, and practical amplifier-design guidance not collated in a single location on the NXP datasheet, providing an actionable reference for UHF power-amplifier engineers.
드롭인 대체품: MRF377HR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
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이 제품에는 사용 가능한 드롭인 대체품이 없습니다.
대체품 요청MRF377HR3 최대 정격 & 전기적 특성
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral RF Power MOSFET (Silicon) |
| Frequency Range | 470 MHz to 860 MHz |
| Drain-Source Voltage (V DSS) | 65 V (max) |
| Operating Drain Voltage | 32 V (typical) |
| Continuous Output Power (P out) | 45 W (CW, push-pull) |
| Power Gain (G ps) | 18.2 dB (typical at 860 MHz) |
| Test Current | 2 A |
| Configuration | Push-Pull (internally matched) |
| 패키지 | NI-860C3 (ceramic flange) |
| 실장 유형 | Flange / Screw Mount (Surface Mount variant per HR3 suffix) |
| 동작 온도 | -40 C to +200 C (junction) |
| Lead-Free / RoHS | Lead Free / RoHS Compliant |
| Case Connection | Source |
| Maximum Power Dissipation | 648 W (per Partstack listing) |
MRF377HR3 핀 구성
| 핀 1 | Drain (Side A) — RF output / Drain terminal - side A of push-pull pair |
| 핀 2 | Gate (Side A) — RF input / Gate bias - side A of push-pull pair |
| 핀 3 | Drain (Side B) — RF output / Drain terminal - side B of push-pull pair |
| 핀 4 | Gate (Side B) — RF input / Gate bias - side B of push-pull pair |
| 핀 FLANGE | Source / Flange — Source-connected ceramic flange for screw mounting and thermal dissipation |
안전 동작 영역 - MRF377HR3
일반적인 애플리케이션
MRF377HR3 적합 용도: 6 애플리케이션s: UHF Digital Television Transmitters (DVB-T/ATSC/ISDB-T), Broadband Industrial RF Heating, Avionics and PMR Linear Amplifiers, Scientific and Medical RF Power Amplifiers, UHF RFID Reader and IoT Infrastructure, Software-Defined Radio (SDR) Power Front-Ends.
UHF Digital Television Transmitters (DVB-T/ATSC/ISDB-T)
The MRF377HR3 is purpose-built for the UHF television broadcast band, with a specified 470-860 MHz frequency range covering DVB-T (470-862 MHz), ATSC (614-698 MHz), and ISDB-T (470-770 MHz) channel plans. Its 45 W CW output and 18.2 dB gain allow a single push-pull pair to drive a final-stage amplifier in low-to-medium power transmitters, eliminating the need for an external power-combining stage. The broadband internal matching covers the entire UHF band without band-specific tuning, reducing transmitter SKU count. Source: NXP MRF377H datasheet.
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Broadband Industrial RF Heating
Industrial RF heating and dielectric sealing systems in the UHF band (typically 27 MHz ISM excluded; UHF 433/868 MHz and 860 MHz) benefit from the MRF377HR3's broadband response. The 45 W output provides adequate power for small-batch dielectric heating of plastics, while the internally matched push-pull configuration halves the matching-network design effort compared with discrete MOSFET designs. The 32 V drain supply is compatible with standard industrial 28-32 V DC bus architectures. Junction temperature must be monitored given the 648 W absolute dissipation rating. Source: NXP MRF377H datasheet.
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Avionics and PMR Linear Amplifiers
Professional Mobile Radio (PMR) and avionics transponder/communication amplifiers operating in segments of the 470-860 MHz range can leverage the MRF377HR3's broadband gain. The 18.2 dB typical power gain reduces driver-stage complexity, and the push-pull configuration suppresses even-order harmonics to meet stringent spectral purity masks. The 65 V V DSS rating provides 2x operating-voltage margin for reliable operation under VSWR mismatch conditions encountered in mobile and airborne installations. The NI-860C3 ceramic flange supports screw-down chassis mounting for vibration-tolerant avionics assemblies. Source: NXP MRF377H datasheet.
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Scientific and Medical RF Power Amplifiers
Research and medical RF applications such as 1 T/1.5 T MRI RF amplifiers, particle accelerator driver stages, and RF plasma sources operating within UHF bands can use the MRF377HR3 as a final or driver amplifier. The 45 W output level matches the typical drive requirements for low-field MRI transmit coils and small plasma chambers. The high gain reduces the number of cascaded gain stages, simplifying the amplifier's overall bill of materials. Push-pull operation also minimizes even-order harmonic content that could interfere with sensitive measurement instruments. Source: NXP MRF377H datasheet.
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UHF RFID Reader and IoT Infrastructure
Long-range passive UHF RFID readers (860-960 MHz ETSI/FCC bands) and IoT gateway infrastructure can use the MRF377HR3 in the lower UHF segment. The broadband 470-860 MHz response covers the lower half of the global UHF RFID band, and 45 W output supports reader ranges beyond 10 meters with appropriate antenna gain. The internally matched push-pull design enables rapid reader-prototype development without extensive RF matching expertise, and the 32 V supply is straightforward to derive from standard 24 V or 48 V telecom/PoE rails. Source: NXP MRF377H datasheet.
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Software-Defined Radio (SDR) Power Front-Ends
Software-defined radio transmitter front-ends for commercial and defense applications operating in UHF bands can leverage the MRF377HR3 as a broadband power output stage. The 470-860 MHz coverage accommodates multiple waveforms (DVB-T, mobile radio, satellite uplink downlinks) with a single hardware design, reducing platform complexity. The 45 W output level supports medium-power tactical radio installations, and the 18.2 dB gain reduces the required DSP/FPGA-attached analog gain chain. The broadband matching simplifies frequency-agile operation characteristic of SDR architectures. Source: NXP MRF377H datasheet.
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추천 제품 요약
엔지니어링 참조 데이터: MRF377HR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF377HR5 | MRF377R3 | MRF377R5 | MRF377H | MRF8S9170NR3 | MRFE6S9160HSR3 |
|---|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-860C3 (ceramic SMD flange) | NI-860C3 (ceramic SMD flange) - same | NI-860C (through-hole) - same electrical, larger flange | NI-860C (through-hole) - same electrical, larger flange | NI-860C3 (ceramic SMD flange) - same | NI-780S-2 - different footprint, retuning required | NI-780HS-2 - different footprint, retuning required |
| Frequency Range | 470-860 MHz | 470-860 MHz - identical | 470-860 MHz - identical | 470-860 MHz - identical | 470-860 MHz - identical | 920-960 MHz | 865-900 MHz |
| Drain Voltage | 32 V | 32 V - identical | 32 V - identical | 32 V - identical | 32 V - identical | 28 V | 28 V |
| Configuration | Push-Pull (internally matched) | Push-Pull - identical | Push-Pull - identical | Push-Pull - identical | Push-Pull - identical | Single-ended (Class AB/C) | Single-ended |
주요 차별점
- Internally matched push-pull pair in a single ceramic package (vs MRF8S9170NR3)
- Highest power gain in 470-860 MHz UHF broadband category (vs MRFE6S9160HSR3)
- Highest drain voltage rating in the family (65 V V DSS) (vs MRF8S9170NR3)
설계 노트
The MRF377HR3's ceramic NI-860C3 flange must be bolted to a heatsink with the datasheet-specified torque (typically 4-6 in-lbs) and a thin layer of thermal compound to maintain the rated junction-to-case thermal resistance. Estimated: with Pout=45 W, Pdiss approximately 30 W at typical 60% drain efficiency, the heatsink must dissipate 30 W while keeping Tj below 200 C - select a heatsink with theta_sa below 0.5 C/W at the operating altitude.
Layout RF input and output transmission lines using microstrip or stripline techniques on the recommended substrate (typically Rogers RO4350B or equivalent). Keep gate and drain traces as short as possible, and place the input matching network within 5 mm of the gate pins to minimize parasitic inductance. The push-pull balanced configuration requires careful attention to symmetry; mismatched trace lengths between the two halves will degrade harmonic suppression.
Use a regulated 32 V DC supply with sub-millisecond overcurrent protection; a 32 V rail rising above 36 V can exceed the safe operating area and destroy the die. Estimated: at full 45 W output with 60% drain efficiency, the supply must deliver approximately 2.3 A continuous. Add a low-ESR electrolytic capacitor bank (>= 1000 uF) at the drain feed to absorb modulation peaks in digital-TV service.
Do not attempt single-ended operation - the MRF377HR3 is internally matched for push-pull use only, and single-ended biasing will not deliver rated output and may cause die failure from impedance mismatch. Do not exceed 65 V V DSS even momentarily, including transients from the drain feed; add a TVS diode (e.g., 58 V bidirectional) across the drain supply for inductive load protection. Always gate-bias the device to the specified quiescent current (2 A) before applying RF drive.
The broadband 470-860 MHz response means the amplifier is susceptible to out-of-band oscillations; include a small gate-series resistor (1-5 ohm) at each gate pin to suppress VHF/UHF parasitic resonances. Use ferrite beads on the drain feed for low-frequency stability. Verify stability with a network analyzer + spectrum analyzer sweep across DC to 2 GHz before applying full RF drive.
규정 준수 정보
Lead-free and RoHS compliant per DigiKey listing and Zeanoit distributor note. AEC-Q100 not applicable (discrete RF power MOSFET, not an automotive-qualified IC). REACH compliance status inferred from NXP corporate policy; not explicitly listed in datasheet snippet.
