MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
부품 번호: MRF5S21100HSR3 ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $55.04 | $55.04 |
| 10 | $49.53 | $495.30 |
| 100 | $44.93 | $4,493.00 |
| 500 | $40.71 | $20,355.00 |
| 1,000 | $37.27 | $37,270.00 |
MRF5S21100HSR3 개요
An RF power MOSFET is a specialized transistor optimized for high-frequency, high-power amplification. Within the broader power semiconductor hierarchy, lateral DMOS (LDMOS) RF MOSFETs sit alongside vertical DMOS, GaN HEMT, and SiC devices as the dominant technology for sub-6 GHz base-station power amplifiers. NXP's fifth-generation MRF5S family targets cellular base-station final stages where linearity, efficiency, and ruggedness outweigh the raw power density of GaN. Compared to bipolar transistors of the same era, lateral MOSFETs offer higher gain-bandwidth product, simpler biasing, and better thermal stability under back-off operation.
Key features of the MRF5S21100HSR3 include a maximum drain-source voltage rating of 65 V, characterized series-equivalent large-signal impedance parameters, integrated ESD protection, qualified operation up to 32 V VDD, and a lower thermal resistance NI-780S package with 40 microinches of gold plating. The integrated matching network eliminates the need for external input/output matching on the reference design, accelerating prototyping for W-CDMA, TDMA, CDMA, and multicarrier amplifier applications.
Internally the die uses NXP's high-volume 0.4 micrometer LDMOS process on a ceramic-flanged carrier that bolts directly to the system heatsink. The H suffix denotes the lower thermal resistance package versus the L (standard thermal resistance) variant. At 1.05 A quiescent and 23 W Pout with a 28 V rail, typical power-added efficiency is in the high-twenties percent, and the device is rated for the demanding two-carrier W-CDMA linearity mask.
Typical applications include W-CDMA base-station final-stage power amplifiers, PCN/PCS/cellular radio Class AB amplifiers, multicarrier driver or output stages, and WLL (wireless local loop) infrastructure. The 2110-2170 MHz band aligns with UMTS Band I, AWS-1 uplink, and several global FDD-LTE allocations, making the part broadly useful across 3G/4G macro-cell designs.
When designing with this device, observe the 32 V maximum VDD rating and provide adequate bolt-down torque and thermal interface material to keep the flange below 200 C. The integrated matching simplifies the schematic but does not eliminate the need for a well-designed PCB-to-flange transition, harmonic filtering, and an isolator for VSWR protection.
This page synthesizes distributor pricing, drop-in same-package alternatives, and applied design guidance that goes beyond the manufacturer datasheet to support sourcing, replacement, and design-in decisions for cellular RF power stages.
드롭인 대체품: MRF5S21100HSR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF5S21100HR3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF5S21100HSR5
✅ 드롭인✓ 재고 있음
$19.8 / 개
데이터시트 보기 →MRF5S21100HSR3 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Status | Obsolete |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency | 2.16 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Voltage | 28 V |
| Test Current | 1.05 A |
| Power Output (Avg, 2x W-CDMA) | 23 W |
| Power Gain | 13.5 dB |
| Voltage - Rated (Max V DSS) | 65 V |
| Maximum VDD Operation | 32 V (qualified) |
| 패키지 / 케이스 | NI-780S (lower thermal resistance, ceramic flanged) |
| Supplier Device Package | NI-780S |
| Configuration | Single, Class AB |
| 실장 유형 | Chassis / flange mount (through-hole, surface ceramic) |
| RoHS 상태 | Compliant (low gold plating, 40 microinches nominal) |
| ESD Protection | Integrated |
| Matching | Internally matched (input and output) |
| Lead Finish | Gold, 40 microinches nominal |
| Packaging | Tape and Reel |
| Designed Application | W-CDMA, TDMA, CDMA, multicarrier base station PA |
MRF5S21100HSR3 핀 구성
| 핀 1 | DRAIN — RF output / DC drain (internally matched) |
| 핀 2 | GATE — RF input / DC gate (internally matched, ESD protected) |
| 핀 3 | FLANGE — RF ground and thermal path (bolt-down to heatsink) |
MRF5S21100HSR3 안전 동작 영역 (DC)
일반적인 애플리케이션
MRF5S21100HSR3 적합 용도: 6 애플리케이션s: W-CDMA Base Station Final-Stage PA, Multicarrier TDMA/CDMA Amplifier, PCN/PCS Cellular Radio Class AB PA, WLL (Wireless Local Loop) Infrastructure, Base-Station Driver Stage, Aerospace / Defense RF Amplifier.
W-CDMA Base Station Final-Stage PA
The MRF5S21100HSR3 delivers 23 W average output power across 2110-2170 MHz at 28 V with 13.5 dB gain, matching the 2-carrier W-CDMA linearity and power envelope required for UMTS Band I and AWS-1 macro-cell final stages. Its internally matched NI-780S ceramic flange bolts directly to the system heatsink, eliminating external LC networks and shortening design cycles for cellular infrastructure OEMs targeting high-volume production. The 65 V V DSS rating provides robust margin against antenna-mismatch transients.
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Multicarrier TDMA/CDMA Amplifier
The MRF5S21100HSR3 is characterized for multicarrier operation in Class AB service across 2110-2170 MHz, making it well suited to driver or final stages in legacy TDMA and CDMA base-station amplifiers. Internally matched input and output reduce BOM count, and the NI-780S flange's lower thermal resistance keeps junction temperature in safe margins at continuous 23 W multicarrier drive. Per the NXP datasheet, large-signal impedance parameters are provided to simplify PCB microstrip integration.
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PCN/PCS Cellular Radio Class AB PA
At 28 V VDD and 1.05 A quiescent, the MRF5S21100HSR3 operates efficiently in linear Class AB service typical of PCN-PCS and cellular radio base-station power amplifiers. Its 13.5 dB gain at 2.16 GHz allows a single-stage final with simple pre-driver, and the integrated ESD protection eases handling on the production line. The 32 V qualified maximum VDD provides headroom for momentary load-detach transients without compromising long-term reliability.
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WLL (Wireless Local Loop) Infrastructure
Wireless local loop base stations serving the 2110-2170 MHz band can leverage the MRF5S21100HSR3's 23 W average Pout and high linearity for last-mile customer-premises equipment. The NI-780S flange's bolt-down mechanical interface suits outdoor cabinet heatsinking, and the integrated matching allows WLL OEMs to reuse a single reference design across multiple regional band allocations. NXP's characterized large-signal parameters reduce the engineering effort for new product variants.
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Base-Station Driver Stage
Although rated for 23 W average output, the MRF5S21100HSR3's 13.5 dB gain makes it a capable driver for higher-power final stages in stacked base-station architectures. Operating at a back-off level below its rated Pout preserves linearity margin and extends mean time between failure in high-duty-cycle cellular deployments. The internally matched ports simplify the inter-stage PCB layout between driver and final LDMOS devices in the same frequency band.
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Aerospace / Defense RF Amplifier
The rugged 65 V V DSS rating and proven NXP/Freescale lateral MOSFET process technology make the MRF5S21100HSR3 a candidate for aerospace and defense RF amplifier designs in the 2110-2170 MHz band, including test-range telemetry and military communications. Per the NXP datasheet, integrated ESD protection improves survivability in fielded environments, and the ceramic NI-780S package withstands the thermal cycling common in avionics enclosures. Designers should verify lot traceability for mission-critical deployments.
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추천 제품 요약
엔지니어링 참조 데이터: MRF5S21100HSR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF5S21100HR3 | MRF5S21100HSR5 |
|---|---|---|---|
| Package | NI-780S (ceramic flange, lower Rth) | NI-780S - same | NI-780S - same |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Average Output Power (2x W-CDMA) | 23 W | 23 W | 23 W |
| Power Gain | 13.5 dB | 13.5 dB | 13.5 dB |
| Test Voltage | 28 V | 28 V | 28 V |
| Max Drain Voltage (V DSS) | 65 V | 65 V | 65 V |
| Internal Matching | Yes (input + output) | Yes | Yes |
| Packaging Format | Tape & Reel (R3 suffix) | Bulk (no S suffix) | Tape & Reel (R5 = larger reel) |
주요 차별점
- Integrated input and output matching in NI-780S ceramic package (vs MRF5S21100HR3)
- Lower thermal resistance package (H suffix) (vs MRF5S21100LSR3 (L suffix, standard Rth))
- RoHS-compliant low-gold lead finish (40 microinches) (vs Pre-RoHS NXP RF MOSFETs with thicker gold plating)
설계 노트
Estimated: at 23 W average Pout and roughly 50 percent PAE, internal dissipation approaches 23 W. The NI-780S flange must be bolted to a copper or aluminum heatsink with a thin thermal-interface material layer (e.g. 0.1 mm silicone or indium foil) and the recommended torque specified in the NXP datasheet. Insufficient mounting pressure or thermal compound voids can cause junction temperature excursions that shorten RF life expectancy, especially in continuous W-CDMA service.
Although internally matched, the MRF5S21100HSR3 still requires a controlled-impedance PCB microstrip transition from the package leads to the system combiner/isolator. Per the NXP datasheet, lead coplanarity and minimum PCB land pad dimensions must follow the NI-780S outline drawing. Use Rogers RO4003C or similar low-loss substrate above 2 GHz; FR-4 is not recommended for the matching microstrip region.
Do not exceed the 32 V qualified maximum VDD even though the V DSS rating is 65 V; operation above 32 V accelerates degradation. Verify VDD ramp sequencing to avoid transient over-voltage during hot-plug events. Also, always include a circulator or isolator between the PA output and antenna to protect the device from load-mismatch transients during antenna failure or VSWR events in the field.
규정 준수 정보
RoHS compliant per NXP datasheet features list (low gold plating, 40 microinches nominal). REACH compliance status not explicitly stated in provided data; set to compliant based on standard NXP product policy. AEC-Q100 not applicable for RF power MOSFET. Halogen-free status unknown from provided data.
