MRF5S9100NR1 - 880MHz N-CDMA 20W RF Power LDMOS | NXP
부품 번호: MRF5S9100NR1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $48.5 | $48.50 |
| 10 | $43.2 | $432.00 |
| 100 | $38.75 | $3,875.00 |
| 500 | $34.9 | $17,450.00 |
| 1,000 | $31.4 | $31,400.00 |
MRF5S9100NR1 개요
A RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power MOSFET architecture designed for high-frequency, high-power amplification. Unlike standard power MOSFETs, LDMOS integrates the source connections through the silicon substrate, reducing parasitic inductance and enabling multi-MHz to multi-GHz operation. Within the broader taxonomy, this part sits at: RF power transistor -> RF power MOSFET -> LDMOS -> discrete semiconductor -> electronic component. LDMOS has become the dominant technology for cellular base-station power amplifiers from 700 MHz through 2.7 GHz because it offers excellent gain, broadband performance, and superior thermal ruggedness compared to older bipolar junction transistor (BJT) solutions.
Key features of the MRF5S9100NR1 include 19.5 dB typical power gain at 880 MHz, broadband response covering up to 1000 MHz, integrated ESD protection, and a thermally enhanced TO-270-4 ceramic-look plastic over-mold package with a flanged lead for bolt-down mounting and direct-to-heat-sink thermal transfer. The device is rated for 68 V drain-source breakdown with a 26 V typical operating supply.
The MRF5S9100NR1 uses Freescale/NXP's 6th-generation (HV6) LDMOS process, providing high breakdown, low feedback capacitance, and built-in gate-source protection diodes. The lateral structure delivers stable common-source amplifier behavior, which simplifies PCB matching-network design at 800-1000 MHz and supports N-CDMA, W-CDMA, and OFDM modulation formats with adjacent-channel-leakage-ratio (ACLR) performance suited to 3G and pre-LTE base-station hardware.
Typical applications include 880 MHz N-CDMA cellular base-station power amplifiers, GSM/EDGE driver or final-stage amplifiers, industrial RF heating, RFID interrogators, and paging transmitters operating in the 900 MHz ISM band. Its broadband capability also makes it useful as a generic 800-1000 MHz power block for laboratory amplifiers and instrumentation.
When designing with this part, ensure the drain supply is well decoupled at the device flange and that the lead-to-flange grounding path is solid. The TO-270-4 package must be bolted to a heat sink with proper thermal compound; the silicon reaches full rated power only when the case-to-sink thermal resistance is minimized. Input and output matching networks should be designed on low-loss substrates such as RO4350B for best efficiency at 880 MHz.
This page synthesizes distributor stock, lead time, drop-in cross-references including MRF5S9100NBR1, and practical RF PCB layout guidance that the manufacturer datasheet alone does not consolidate.
드롭인 대체품: MRF5S9100NR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF5S9100NBR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF5S9100MR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF5S9100MBR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF5S9100NR1 최대 정격 & 전기적 특성
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power MOSFET (HV6 LDMOS process) |
| Drain-Source Voltage (Vds) Rated | 68 V |
| Test Supply Voltage | 26 V |
| Operating Frequency | up to 1000 MHz |
| Test Frequency | 880 MHz |
| Output Power (Pout) | 20 W (avg, N-CDMA) |
| Power Gain | 19.5 dB (typical at 880 MHz, 26 V) |
| Quiescent Bias Current (Idq) | 950 mA |
| 패키지 | TO-270 WB-4 (over-molded plastic, flanged) |
| 실장 유형 | Surface / chassis mount, bolted flange |
| Lead Configuration | 4-lead (gate, drain, source, source) |
| Lead-Free Status | Replaced by MRF5S9100NBR1 - no form/fit/function changes |
| RoHS 상태 | Compliant (lead-free replacement suffix 'N' indicates Pb-free transition) |
| Application | N-CDMA base station, broadband commercial/industrial RF up to 1000 MHz |
MRF5S9100NR1 핀 구성
| 핀 1 | Gate — RF input / DC gate bias |
| 핀 2 | Drain — RF output / DC drain supply (26 V typ) |
| 핀 3 | Source — RF/DC ground return |
| 핀 4 | Source — RF/DC ground return (parallel to pin 3) |
안전 동작 영역 - MRF5S9100NR1 (DC)
일반적인 애플리케이션
MRF5S9100NR1 적합 용도: 6 애플리케이션s: 880 MHz N-CDMA Cellular Base Station Power Amplifier, W-CDMA / 3G Cellular Driver or Final PA Stage, Industrial RF Heating and Drying, RFID Interrogator Power Amplifier, Paging and Two-Way Radio Transmitters, Laboratory RF Power Amplifier and Test Equipment.
880 MHz N-CDMA Cellular Base Station Power Amplifier
The MRF5S9100NR1's 20 W output and 19.5 dB gain at 880 MHz match the final-stage requirements of N-CDMA cellular base-station transmitters exactly. Its LDMOS architecture produces low memory效应 (memory effects), allowing the device to meet 3GPP2 adjacent-channel-leakage-ratio (ACLR) specifications even with multi-carrier N-CDMA drive. The TO-270-4 flange bolts directly to the PA heatsink, keeping junction temperature within the silicon's safe operating area at full duty cycle. Designers typically pair the part with a smaller NXP driver LDMOS (e.g., MRF6S9060N) and an external circulator for full PA module integration into base-station racks.
추천
W-CDMA / 3G Cellular Driver or Final PA Stage
Although characterized at 880 MHz, the MRF5S9100NR1's broadband response covers the 900 MHz cellular uplink band cleanly, making it useful for W-CDMA / UMTS driver or final-stage service. Its 19.5 dB gain simplifies a two-stage PA cascade to 30+ dB system gain when paired with an MRF6-series driver. Designers should re-optimize the matching network for the W-CDMA carrier frequency (typically 880-915 MHz uplink) but can otherwise use the same bias and thermal footprint. ACLR performance with W-CDMA modulation is documented in the NXP application notes for the MRF5S9100 family.
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Industrial RF Heating and Drying
Industrial RF heating systems in the 13.56, 27.12, and 915 MHz ISM bands frequently reuse 900 MHz-class cellular LDMOS parts because of their ruggedness and high gain. The MRF5S9100NR1's 20 W CW capability and broadband behavior make it a strong candidate for 915 MHz ISM band dielectric heating and plastic-welding applications. The lateral MOSFET structure is more tolerant of output mismatch (high VSWR) than bipolar alternatives, surviving load-pull-induced standing waves in poorly terminated industrial loads. Designers must add external VSWR protection and oversize the heatsink for 100% CW duty cycle.
추천
RFID Interrogator Power Amplifier
UHF RFID interrogators operating in the 860-960 MHz band often use 20 W-class LDMOS final stages to read tags at extended range. The MRF5S9100NR1's 19.5 dB gain at 880 MHz delivers strong downlink power for ISO 18000-63 / EPC Class 1 Gen 2 systems requiring 30 dBm EIRP after antenna gain. The device's broadband matching allows a single PA design to cover both EU (868 MHz) and US (915 MHz) RFID bands with minor network retuning. Quiescent bias current of 950 mA produces reasonable DC-RF efficiency for handheld or fixed interrogator form factors.
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Paging and Two-Way Radio Transmitters
Legacy 900 MHz paging systems and private mobile radio (PMR) base stations benefit from the MRF5S9100NR1's high gain and broadband frequency response. Paging transmitters in the 929-932 MHz band require 10-25 W output with good linearity for FSK modulation - exactly the operating envelope of this LDMOS. The part also sees use as a final stage in simulcast paging networks where reliability over decades of continuous service is critical. Same-platform pin compatibility with the MRF5S9100NBR1 ensures spare-parts availability across fleet refreshes.
추천
Laboratory RF Power Amplifier and Test Equipment
University RF labs and ATE (automatic test equipment) integrators often build 20 W CW amplifiers around the MRF5S9100NR1 for EMC test chambers and general-purpose 900 MHz stimulus sources. The device's known-good S-parameters and documented application circuit in the NXP datasheet let students and engineers build a working PA in a single lab session. The TO-270-4 flange mounts easily to standard evaluation heatsinks, and the broadband match accommodates swept-frequency measurements from 800-1000 MHz. Same-platform drop-in compatibility with the NBR1 and MBR1 siblings makes the design re-orderable for future builds.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF5S9100NR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF5S9100NBR1 | MRF5S9100MR1 | MRF5S9100MBR1 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WB-4 (plastic) | TO-270 WB-4 (plastic) - same | TO-270 WB-4 (ceramic) - same footprint | TO-270 WB-4 (ceramic, lead-free) - same footprint |
| Output Power | 20 W avg (N-CDMA) | 20 W avg (identical) | 20 W avg (identical) | 20 W avg (identical) |
| Test Frequency | 880 MHz | 880 MHz | 880 MHz | 880 MHz |
| Power Gain | 19.5 dB | 19.5 dB (identical) | 19.5 dB (identical) | 19.5 dB (identical) |
| Test Supply Voltage | 26 V | 26 V (identical) | 26 V (identical) | 26 V (identical) |
| Drain-Source Voltage Rated | 68 V | 68 V (identical) | 68 V (identical) | 68 V (identical) |
| Lead-Free / RoHS | Transition part (replaced by NBR1) | Yes (fully RoHS-compliant) | No (ceramic non-RoHS) | Yes (fully RoHS-compliant) |
| Package Material | Over-molded plastic | Over-molded plastic | Ceramic | Ceramic |
주요 차별점
- Active lifecycle status with broad distributor inventory (vs MRF5S9101)
- Same-family drop-in path to fully RoHS-compliant parts (vs MRF5S9100NBR1)
- TO-270-4 footprint shared across the entire MRF5S9100 family (vs MRF5S9100MR1 / MRF5S9100MBR1)
설계 노트
Estimated: at 20 W RF output and 26 V supply with typical 50% drain efficiency, the MRF5S9100NR1 dissipates approximately 20 W of DC heat into its TO-270-4 flange. With a junction-to-case thermal resistance in the low single-digit C/W range, the heatsink-to-ambient thermal resistance must stay below 1 C/W for a 50 C junction temperature rise. Use a bolted heatsink with thermal compound, and consider active airflow or a cold plate for continuous-CW service above 10 W dissipation.
Build the input and output matching networks on a low-loss RF substrate such as RO4350B (εr=3.48) or RO4003C with 0.5 oz copper. Keep the gate and drain traces as 50 Ω microstrip lines, and place the drain bias feed (RFC) close to the package lead to minimize lead inductance. The TO-270-4 flange must be soldered or bolted to a continuous ground plane on the PCB top layer, with multiple ground vias stitching the top plane to the bottom plane for low-inductance RF return.
Do not substitute MRF5S9101 in place of MRF5S9100NR1 - the MRF5S9101 is a different part number in the family and is NOT pin-compatible per NXP's cross-reference note. Do not exceed 68 V on the drain - the device's breakdown voltage is the absolute maximum, and inductive ringing from the matching network can transiently exceed the DC supply. Always include a gate-source protection resistor (typically 10 kΩ) to prevent ESD damage during handling and assembly.
The TO-270-4 package's source leads (pins 3 and 4) carry the full RF return current and must be bonded directly to the grounded heatsink or PCB ground pour with the shortest possible lead length. Use multiple bond wires or a copper strap if the source inductance is critical for the target frequency. Place the gate and drain matching networks on opposite sides of the package leads to minimize coupling, and isolate the DC bias feed with a printed quarter-wave stub or a high-Q RF choke.
규정 준수 정보
MRF5S9100NR1 is the transition part with N suffix indicating Pb-free transition - it is REPLACED BY MRF5S9100NBR1 for full RoHS compliance per the manufacturer cross-reference note. There are no form, fit, or function changes between NR1 and NBR1.
