MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP
부품 번호: MRF6S27015GNR1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $17.5 | $17.50 |
| 10 | $15.2 | $152.00 |
| 100 | $12.8 | $1,280.00 |
| 500 | $10.95 | $5,475.00 |
| 1,000 | $9.5 | $9,500.00 |
MRF6S27015GNR1 개요
A lateral N-channel RF power MOSFET is a discrete transistor whose drain current flows horizontally through the silicon under a high-frequency gate field, optimized for RF amplification rather than DC switching. Within the RF transistor hierarchy it sits between small-signal RF FETs (mW levels) and high-power LDMOS amplifiers (100 W+); the MRF6S series specifically targets macro-cell base-station drivers and final stages in the 1.8-2.7 GHz bands.
Key features include 14 dB typical power gain at 2.6 GHz, 3 W average output power with 28 V drain bias, and an integrated ESD protection structure that survives the rigors of surface-mount assembly. The part is rated for W-CDMA single-carrier waveforms and supports the 2300-2700 MHz instantaneous bandwidth, covering the global 2.3 GHz TDD LTE / WiMAX and 2.5-2.7 GHz WiBro / BRS allocations.
The device uses NXP's HV6 (High-Voltage 6th generation) lateral MOSFET process, which provides excellent thermal stability, high breakdown voltage, and reduced memory effects compared to earlier bipolar RF parts. The TO-270-2 gull-wing lead frame enables low-inductance source grounding and straightforward PCB integration with microstrip or stripline matching networks.
Typical applications include W-CDMA and LTE base-station final-stage PAs, WiMAX 2.5 GHz transmitters, S-band driver amplifiers, and broadband 2.3-2.7 GHz industrial and medical RF power blocks. The 14 dB gain also lets designers use it as a driver for higher-power LDMOS final stages.
When designing with this part, maintain adequate drain-bias sequencing to prevent thermal runaway, and use a low-inductance source grounding layout with multiple vias. Match the input and output to 50 ohm microstrip using the recommended reference designs from the NXP datasheet for production-ready performance.
This page synthesizes distributor pricing, drop-in cross-references, and design notes not found in the manufacturer datasheet alone - enabling faster RF PA development and lifecycle planning for engineers working on 2.3-2.7 GHz infrastructure.
드롭인 대체품: MRF6S27015GNR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MRF6S27015GNR1 (동일 폼 팩터 및 풋프린트) — 차이점: Mounting Type, RoHS Status, Configuration, Frequency Range, Manufacturer.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF6S27015NR1
✅ 드롭인✓ 재고 있음
$9.35 / 개
데이터시트 보기 →MRF6S27015GN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6S27015GNR2
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6S27015GNR1 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors |
| Part Type | RF Power MOSFET, N-Channel, Lateral |
| Technology | HV6 Lateral N-Channel Enhancement-Mode MOSFET |
| 패키지 | TO-270-2 (Case 1265-09, Style 1) Gull-Wing |
| Operating Frequency Range | 2300 MHz to 2700 MHz |
| Drain-Source Voltage (VDSS) | 68 V (max) |
| Operating Drain Voltage (Vdd) | 28 V (typical) |
| Output Power (Avg, W-CDMA) | 3 W |
| Power Gain (Typ, 2.6 GHz) | 14 dB |
| Test Quiescent Current (IDQ) | 160 mA |
| Configuration | Single-ended, common-source |
| 실장 유형 | Surface Mount (gull-wing leads) |
| Target Waveform | Single-carrier W-CDMA, LTE, WiMAX |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
MRF6S27015GNR1 핀 구성
| 핀 1 | Gate — RF input gate; DC bias and RF drive applied here |
| 핀 2 | Drain — RF output drain; 28 V DC bias and RF output |
| 핀 3 | Source — Source / RF ground; connected to PCB ground plane with multiple vias |
안전 동작 영역
일반적인 애플리케이션
MRF6S27015GNR1 적합 용도: 6 애플리케이션s: W-CDMA Base Station Final PA, LTE / WiMAX Small-Cell Transmitter, S-Band Driver Amplifier, Industrial RF Power Block, Broadband 2.3-2.7 GHz Repeater, RF Test & Measurement Driver.
W-CDMA Base Station Final PA
The MRF6S27015GNR1 is engineered as a 3 W average final-stage PA for 2.3-2.7 GHz W-CDMA macro-cell base stations, delivering 14 dB gain at 28 V drain bias per the NXP datasheet. Its HV6 lateral MOSFET process ensures excellent linearity under single-carrier W-CDMA waveforms, with adjacent-channel leakage ratio (ACLR) suitable for 3GPP Release 99 conformance when properly matched to 50 ohm microstrip. The TO-270-2 package provides low-inductance source grounding that preserves gain and efficiency at 2.6 GHz, while the 2300-2700 MHz instantaneous bandwidth covers the 2.3 GHz TDD LTE and 2.5 GHz WiBro/BRS bands. Designers typically follow the NXP reference design PCB layout to achieve datasheet performance, and place a bias-sequencing network to prevent thermal runaway at P1 dB compression. Compared with earlier bipolar RF parts, the MRF6S27015GNR1 reduces memory effects and improves thermal stability under high-duty-cycle CDMA traffic.
추천
LTE / WiMAX Small-Cell Transmitter
For 2.3-2.7 GHz LTE TDD and WiMAX small-cell access points, the MRF6S27015GNR1 provides 3 W average output power with 14 dB gain per the NXP datasheet, supporting both 2.3 GHz European LTE-TDD and 2.5 GHz global WiMAX allocations. The single-ended common-source topology simplifies PCB layout, and the 28 V drain bias keeps DC power consumption manageable in outdoor small-cell enclosures. The HV6 lateral MOSFET's high breakdown voltage (68 V max VDSS) provides margin against VSWR mismatches at the antenna connector - a common cause of field failures in small-cell deployments. With proper input/output matching, the MRF6S27015GNR1 can serve as both a final stage and a driver for higher-power macro-cell line-ups, offering BOM consolidation across product families.
추천
S-Band Driver Amplifier
The MRF6S27015GNR1 functions as an S-band driver for higher-power LDMOS final stages in 2.3-2.7 GHz radar, telemetry, and communications systems. Per the NXP datasheet, its 14 dB gain at 160 mA IDQ raises a 50 mW exciter to 2 W - sufficient to drive a 30-60 W LDMOS final to P1 dB. The TO-270-2 gull-wing lead frame supports a low-inductance source path, which is critical at 2.6 GHz where every nanohenry of source inductance reduces gain and degrades stability. Designers can cascade two MRF6S27015GNR1 stages to produce 30+ W saturated output from a milliwatt-level signal source, while still fitting within a compact PCB area. The part's HV6 process delivers the gain flatness needed for pulsed and frequency-modulated waveforms common in S-band telemetry links.
추천
Industrial RF Power Block
Industrial RF generators operating in the 2.3-2.7 GHz ISM/WiMAX bands benefit from the MRF6S27015GNR1's 3 W CW output capability and rugged TO-270-2 packaging. The lateral N-channel MOSFET structure tolerates harsh thermal cycling better than bipolar alternatives, while the 68 V VDSS rating provides headroom against load mismatch in industrial heating and plasma-generation applications. The NXP datasheet specifies the part for single-carrier W-CDMA, but its CW operation at 3 W makes it equally suitable for continuous-duty industrial RF blocks when paired with a proper heatsink and thermal management. The 14 dB gain reduces the need for upstream driver stages, simplifying BOM and reducing overall transmitter cost.
추천
Broadband 2.3-2.7 GHz Repeater
The MRF6S27015GNR1's full 2300-2700 MHz instantaneous bandwidth makes it well-suited for broadband RF repeaters covering multiple bands simultaneously, including 2.3 GHz TDD LTE, 2.5 GHz WiBro, and 2.5-2.7 GHz BRS. Per the NXP datasheet, the part maintains 14 dB gain across this band at 28 V, allowing a single amplifier stage to cover multiple operator allocations without band-specific retuning. The HV6 lateral MOSFET's low memory effects help maintain flat group delay across the 400 MHz bandwidth, critical for low-EVM LTE signal integrity. With its 3 W average output, the MRF6S27015GNR1 can drive indoor distributed antenna system (DAS) head-end units or serve as a final stage in outdoor micro-repeater deployments.
추천
RF Test & Measurement Driver
In laboratory test setups, the MRF6S27015GNR1 serves as a known-good 3 W reference driver for characterizing higher-power devices under test (DUT) in the 2.3-2.7 GHz range. Per the NXP datasheet, its 14 dB gain and 28 V bias point provide a calibrated, repeatable stimulus source for production ATE. The TO-270-2 package's standardized footprint allows easy socketed or soldered integration into test fixtures, while the part's stable S-parameters across temperature support ATE-grade measurement repeatability. Designers building RF test platforms value the part's well-documented reference designs and matching-network recommendations, which reduce fixture development time and accelerate time-to-measurement.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF6S27015GNR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF6S27015NR1 | MRF6S27015GN | MRF6S27015GNR2 |
|---|---|---|---|---|
| Package | TO-270-2 (Case 1265-09) | TO-270-2 (Case 1265-09) - same | TO-270-2 (Case 1265-09) - same | TO-270-2 (Case 1265-09) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency Range | 2300-2700 MHz | 2300-2700 MHz | 2300-2700 MHz | 2300-2700 MHz |
| Output Power (Avg, W-CDMA) | 3 W | 3 W | 3 W | 3 W |
| Power Gain (2.6 GHz) | 14 dB | 14 dB | 14 dB | 14 dB |
| Drain Voltage (Vdd) | 28 V | 28 V | 28 V | 28 V |
| VDSS Breakdown (Max) | 68 V | 68 V | 68 V | 68 V |
| Shipping Format | Tape & Reel (R1) | Tube (NR1) | Bulk (GN) | Tape & Reel (R2 - larger qty) |
주요 차별점
- Same TO-270-2 footprint across shipping formats (vs MRF6S27015NR1)
- NXP original manufacturer with established datasheet (vs MRF6S27015GN (bulk variant))
- Larger reel option for high-volume production (vs MRF6S27015GNR2)
설계 노트
Estimated: at 3 W average W-CDMA output and 28 V drain bias, DC power consumption is roughly 9 W (33% efficiency typical for class AB RF). The MRF6S27015GNR1 dissipates approximately 6 W as heat. The TO-270-2 package requires a substantial copper thermal pad on the PCB (at least 1 square inch of 2 oz copper) plus multiple thermal vias to keep junction temperature below the datasheet maximum. Without adequate thermal management, reliability degrades rapidly at full duty cycle.
At 2.6 GHz, source-lead inductance is the dominant cause of gain loss and stability problems. Solder the TO-270-2 source lead (pin 3) directly to a contiguous ground plane with at least 6-8 plated-through vias directly beneath the package thermal pad. Use the NXP reference design PCB stack-up and matching-network component values as a starting point; deviating from the reference layout may reduce gain by 2-3 dB and cause parametric spread between units.
Do not exceed 68 V on the drain (VDSS) under any transient condition - even brief overvoltage spikes from load-mismatch transients can permanently damage the lateral MOSFET. Always include a drain-bias sequencing circuit that ensures VG (gate) is applied before VD (drain), and removes VD before VG to prevent thermal runaway. Avoid operating at IDQ above 200 mA continuously without an additional heatsink or forced-air cooling.
Use a low-loss PCB substrate such as Rogers RO4350B or Taconic RF-35 for the matching network area. FR-4 introduces 0.5-1 dB of additional loss at 2.6 GHz compared to RF-grade substrates. Keep the input and output 50 ohm microstrip traces as short as possible, and place DC-blocking capacitors (100 pF minimum) at both gate and drain RF ports to prevent DC leakage into the matching network.
규정 준수 정보
RoHS and REACH compliant per NXP product page. Not AEC-Q100 qualified (RF power MOSFET, not automotive-grade IC). Lead-free gull-wing finish compatible with 260 C peak reflow per IPC/JEDEC J-STD-020.
