MRF7S24250NR3 - 250W RF Power LDMOS Transistor 2.45GHz | NXP
부품 번호: MRF7S24250NR3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $88 | $880.00 |
| 100 | $82.5 | $8,250.00 |
| 500 | $78 | $39,000.00 |
| 1,000 | $74.25 | $74,250.00 |
MRF7S24250NR3 개요
Key specifications include 250 W typical output power, 14.7 dB small-signal gain, and a 100 mA quiescent bias current at 30 V. The device also features integrated ESD protection, a moisture sensitivity level (MSL) of 3, and a peak reflow rating of 260 C for 40 seconds. The terminal finish is tin (JESD-609 e3), and it is supplied on tape-and-reel for high-volume SMT-compatible handling.
From an architecture standpoint, the MRF7S24250NR3 uses NXP's laterally diffused MOS (LDMOS) process, a technology that has displaced older bipolar and GaAs devices in high-power RF applications because it combines high breakdown voltage, high gain, and excellent thermal stability. The OM-780-2 flanged ceramic package provides a low thermal resistance path to the heatsink, which is essential when dissipating more than 250 W of pulsed or continuous RF power in compact amplifier modules.
Typical applications include 2.45 GHz industrial microwave generators, RF plasma lighting drivers, ISM-band solid-state cooking appliances, and medical diathermy / hyperthermia equipment. The 2450 MHz operating frequency aligns with the global ISM band allocations, enabling a single design to serve multiple geographies.
When designing with this device, attention must be paid to heatsink selection and overall thermal management. Because the LDMOS junction must remain below its maximum rated temperature during continuous-wave (CW) operation, the system heatsink should be sized to keep the flange temperature below the recommended 65 C under worst-case load.
This page synthesizes real distributor pricing and availability, drop-in compatible alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: MRF7S24250NR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF7S24250N
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF7S24250NR3
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$74.25 / 개
데이터시트 보기 →MRF7S24250NR3 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Family | MRF7S24250N |
| 트랜지스터 유형 | RF Power LDMOS (N-channel) |
| Operating Frequency | 2450 MHz (2.45 GHz ISM band) |
| Output Power (CW) | 250 W |
| Supply Voltage (Vdd) | 32 V |
| Drain-Source Voltage (Vdss) | 30 V |
| Power Gain (Gps) | 14.7 dB |
| Quiescent Current (Idq) | 100 mA |
| 패키지 / 케이스 | OM-780-2 (ceramic air-cavity, flanged) |
| 실장 유형 | Chassis-mount / screw-down to heatsink |
| 습도 민감도 레벨 (MSL) | 3 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | 260 C, max 40 s (JEDEC J-STD-020) |
| Terminal Finish | Tin (Sn), per JESD-609 e3 |
| Application | ISM 2.45 GHz industrial heating, microwave ovens, RF plasma, medical diathermy |
| Reel / Packaging | Tape and Reel (R3 suffix) |
MRF7S24250NR3 om-780-2 (ceramic air-cavity, flanged) 핀 구성 가이드
MRF7S24250NR3(om-780-2 (ceramic air-cavity, flanged) 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: MRF7S24250NR3.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
MRF7S24250NR3 RF 안전 동작 영역 (CW, 2450 MHz, Vdd=32 V)
일반적인 애플리케이션
MRF7S24250NR3 적합 용도: 6 애플리케이션s: Industrial Microwave Heating Generators, Microwave Oven RF Module Replacement, RF Plasma Lighting Drivers, Medical Diathermy and Hyperthermia Equipment, Semiconductor Plasma Processing RF Generators, Industrial Scientific Measurement (ISM) Test Sources.
Industrial Microwave Heating Generators
The MRF7S24250NR3 serves as the end-stage RF amplifier in 2450 MHz solid-state industrial microwave heating systems used for food processing, wood drying, ceramic sintering, and chemical drying. The 250 W CW output power rating and 32 V supply rail match the typical design envelope of mid-power magnetron replacement generators, while the 14.7 dB small-signal gain eliminates the need for an additional driver stage in many designs. LDMOS technology provides higher reliability and precise power control versus legacy magnetrons, enabling closed-loop feedback on delivered RF power. The OM-780-2 flanged package bolts directly to a liquid or forced-air cooled heatsink, which is essential to dissipate roughly 200 W of waste heat at full CW output and keep the LDMOS junction within its rated temperature for continuous industrial duty.
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Microwave Oven RF Module Replacement
The MRF7S24250NR3 is well suited as the RF power device in solid-state replacement modules for legacy 2.45 GHz magnetron-based microwave ovens used in commercial food service and laboratory heating. The 2450 MHz operating frequency exactly matches the FCC/ETSI ISM allocation, and the 32 V Vdd is comparable to existing oven power-supply rails simplifying retrofit integration. Solid-state LDMOS operation enables frequency-agile, amplitude-controlled RF delivery versus the fixed-frequency on/off nature of magnetrons, improving heating uniformity in food applications. Internally matched input and output reduce board complexity versus discrete bipolar designs, while the OM-780-2 package is widely accepted as the industry-standard 250 W-class ISM footprint. Designers must include a high-voltage drain clamp to absorb the inductive flyback energy when the oven door interlock opens mid-cycle.
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RF Plasma Lighting Drivers
The MRF7S24250NR3 drives 2450 MHz RF plasma lamps used in high-efficiency commercial lighting, where the LDMOS output stage excites a resonant cavity containing sulfur or metal-halide vapor. Plasma lamps convert RF energy to broadband white light with luminous efficacy exceeding 100 lumens per watt, and the 250 W CW rating of the MRF7S24250NR3 supports mid-power commercial fixtures from 200 W to 1000 W using 2-4 paralleled devices. The 14.7 dB gain reduces driver complexity and the OM-780-2 ceramic package provides the rugged mechanical mounting required for high-vibration lighting installations. LDMOS also tolerates the variable plasma-load impedance dynamics better than bipolar transistors, which is critical because plasma load impedance shifts dramatically as the gas ionizes from cold-start to steady-state operation.
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Medical Diathermy and Hyperthermia Equipment
The MRF7S24250NR3 supports 2450 MHz continuous-wave power delivery for medical diathermy (tissue heating) and hyperthermia (oncology heating) systems, where the global ISM allocation aligns with medical-use regulatory clearances. The 250 W CW output enables treatment depths appropriate for therapeutic heating of soft tissue, and the precise output-power control available from LDMOS class-AB bias improves dose-delivery accuracy versus older valve-based generators. The OM-780-2 package is compatible with the chassis-mount mechanics used in medical generator enclosures, and NXP's long-term LDMOS reliability track record in industrial service supports the patient-safety expectations of medical equipment manufacturers. Strict adherence to IEC 60601 EMI/EMC limits requires the RF amplifier module to include adequate shielding and filter networks downstream of the LDMOS output stage.
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Semiconductor Plasma Processing RF Generators
The MRF7S24250NR3 is a candidate 2.45 MHz-class RF source for semiconductor plasma processing tools requiring 2450 MHz excitation, primarily in plasma etch and remote-plasma-clean applications where the 2.4 GHz ISM band gives superior plasma ignition over 13.56 MHz in certain chemistries. The 250 W CW rating supports mid-power chamber applications, and the LDMOS amplifier can be paralleled for higher total RF power if chamber requirements grow beyond 250 W. The 32 V supply is convenient for direct bus connection to industrial 24-36 V DC distribution rails common in semiconductor fab equipment. The OM-780-2 package bolted to a liquid-cooled heatsink supports 24x7 production duty cycles typical of high-volume fab tools, while internally matched input/output reduces the RF engineering effort compared to broadband discrete amplifier designs.
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Industrial Scientific Measurement (ISM) Test Sources
The MRF7S24250NR3 acts as the CW power-amplifier stage in 2450 MHz industrial-scientific measurement systems, including material-permittivity probes, microwave-assisted chemistry reactors, and EMC-compliance test fixtures. The 250 W CW class enables high dynamic range in permittivity measurement setups, and the 14.7 dB gain simplifies the source chain by allowing direct modulation of the input at lower drive levels. NXP's published S-parameters and large-signal models let measurement-system designers accurately simulate return loss and harmonic content ahead of building hardware. Because measurement-system labs often run continuous calibration cycles, the LDMOS architecture's long MTBF versus older bipolar parts is a notable advantage for lifetime cost of ownership.
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추천 제품 요약
엔지니어링 참조 데이터: MRF7S24250NR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF7S24250N | MRF7S21150NR3 | MRFE6VP61K25N |
|---|---|---|---|---|
| Package | OM-780-2 (ceramic flanged) | OM-780-2 - same | OM-780-2 (same family) | OM-780-2G (higher-power package variant) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2450 MHz | 2450 MHz | 2450 MHz | 1.8-2000 MHz (not 2.45 GHz ISM) |
| Output Power (CW) | 250 W | 250 W | 150 W (-40%) | 1250 W (+400%, but at lower frequency) |
| Drain Voltage (Vdd) | 32 V | 32 V | 28 V | 50 V |
| Power Gain (Gps) | 14.7 dB | 14.7 dB | 15.0 dB | 21.0 dB |
| Quiescent Current (Idq) | 100 mA | 100 mA | 100 mA | 500 mA |
| Technology | LDMOS | LDMOS | LDMOS | LDMOS (later generation) |
| MSL / Reflow | MSL 3 / 260 C | MSL 3 / 260 C | MSL 3 / 260 C | MSL 3 / 260 C |
주요 차별점
- Internally matched at 2450 MHz ISM band (vs MRF7S21150NR3)
- Higher CW output power at the same OM-780-2 footprint (vs MRF7S21150NR3)
- Industry-standard OM-780-2 package for 250 W-class 2.45 GHz LDMOS (vs MRFE6VP61K25N)
설계 노트
Estimated: at 250 W RF output and approximately 50% DC-RF efficiency, the part dissipates ~200 W of waste heat into the OM-780-2 flange. Per the NXP datasheet, the flange temperature must remain below 65 C in CW operation; design heatsinks assuming 3-4 C/W junction-to-flange plus interface material. Forced-air or liquid cooling is mandatory for continuous-duty industrial heating systems. Use a temperature-compensated bias circuit to keep Idq stable as the heatsink temperature rises. Apply thermal interface material (TIM) of 0.05-0.1 C/W between flange and heatsink.
Per the NXP reference design, follow the OM-780-2 PCB copper artwork exactly to preserve the 2450 MHz internal-matching network S-parameters. Use low-loss PCB substrate (Rogers RO4003C or equivalent) for matching networks, and keep ground vias stitching the top RF ground plane to the second-layer ground plane on a 1 mm grid. Avoid routing digital or low-frequency signals across the RF input/output traces, as the 14.7 dB gain amplifies spurious coupling. Maintain 50 ohm microstrip geometry on input and output to the matched region; any deviation degrades gain flatness and CW output power.
Do not exceed the 32 V Vdd rating - inductive transients from load mismatch or fast bias switching can punch through the LDMOS die. Add a 33 V TVS across the drain supply and gate protection Zener diodes rated at 20 V to prevent latch-up during abnormal operating modes. Avoid operating the part without RF drive applied, as CW dissipation with Idq at 100 mA and Vdd at 32 V alone generates measurable thermal stress. Confirm the heatsink is at low impedance to chassis ground (the OM-780-2 flange is typically the source connection). Finally, do not confuse the OM-780-2 footprint with the older OM-780 footprint - some 250 W-class LDMOS devices use the standard OM-780 while this part uses OM-780-2 with bolt-hole pattern differences.
규정 준수 정보
Terminal finish per JESD-609 e3 (tin) with 260 C peak reflow, MSL 3 per JEDEC J-STD-020. RoHS compliance inferred from datasheet terminal finish and reflow profile; confirm latest NXP regulatory declaration for shipping into EU medical/industrial end-products. AEC-Q100 not applicable for industrial RF power transistors.
