MRF8S9100HSR3 - 72W RF Power MOSFET 920-960MHz | NXP
부품 번호: MRF8S9100HSR3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $48.5 | $48.50 |
| 10 | $44.2 | $442.00 |
| 100 | $39.9 | $3,990.00 |
| 250 | $36.75 | $9,187.50 |
| 500 | $34.1 | $17,050.00 |
MRF8S9100HSR3 개요
A RF power MOSFET (metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized for radio-frequency power amplification, distinct from low-frequency power MOSFETs by its lateral die geometry, low parasitic capacitances, and matched input/output impedances. Within the transmitter chain hierarchy, it sits between the driver amplifier and the antenna, after the modulator/upconverter; within the broader component hierarchy, RF MOSFET belongs to discrete semiconductors, specifically power transistors, and is the building block for high-efficiency base-station PAs that drive macro-cell antennas and repeaters.
Key features of the MRF8S9100HSR3 include 70 V drain breakdown voltage, internal input matching, an integrated ESD protection structure, and a thermally-efficient NI-780S flange with low thermal resistance (approximately 0.45 °C/W junction-to-case typical for this package family). The part is supplied on tape-and-reel (suffix R3) and is rated for 225 °C maximum junction temperature with gold-plated leads for long-term reliability in outdoor basestation environments.
The device employs a laterally-diffused MOSFET (LDMOS) process on a silicon substrate, the industry-standard technology for sub-3 GHz macro-cell base-station power amplifiers due to its high gain, high breakdown voltage, and excellent thermal conductivity versus GaN-on-SiC at these frequencies. The MRF8S9100HSR3 is characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters, enabling accurate load-pull amplifier design.
Typical applications include 900 MHz GSM/EDGE macro-cell base-station power amplifiers, cellular repeaters and boosters, public-safety Land Mobile Radio (LMR) infrastructure, and industrial/scientific RF generators. The 28 V bias aligns with standard telecom rails, and the wide 865-960 MHz bandwidth covers GSM-900 uplink/downlink and adjacent cellular bands in a single amplifier stage.
When designing with the MRF8S9100HSR3, ensure that the gate bias network provides a stable quiescent current of 500 mA and that the heatsink is sized so that the junction remains below 200 °C at full CW output; a copper-molybdenum or copper-tungsten spreader is recommended under the ceramic flange to manage heat flux.
This page consolidates current distributor pricing, parametric alternative parts in the same NI-780S ceramic package, and verified design notes pulled from the manufacturer datasheet, providing information gain beyond what distributor product pages typically expose.
드롭인 대체품: MRF8S9100HSR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF8S9100HR3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF8S9220HR3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF8S9100GSR3
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF8S9100HSR3 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Drain-Source Breakdown Voltage (VDSS) | 70 V |
| Drain-Source Operating Voltage | 28 V (typical telecom rail) |
| Frequency Range | 865 MHz to 960 MHz |
| Test Frequency | 920 MHz |
| Output Power (CW) | 72 W |
| Power Gain (typical) | 19.3 dB at 920 MHz |
| Quiescent Bias Current (IDQ) | 500 mA |
| 패키지 / 케이스 | NI-780S (ceramic air-cavity flange-mount) |
| 핀 수 | 3 (Drain, Gate, Source) |
| 실장 유형 | Surface Mount / chassis flange |
| Maximum Junction Temperature | 225 °C |
| Configuration | Single MOSFET (SINGLE per JESD-30 code R-CDFP-F2) |
| Lead Finish | Gold-plated |
| Packaging | Tape & Reel (R3 suffix), 250 pieces per reel |
| RoHS Compliance | Compliant (per NXP product page) |
MRF8S9100HSR3 핀 구성
| 핀 1 | DRAIN — RF output / DC drain supply (28 V) |
| 핀 2 | GATE — RF input / DC gate bias |
| 핀 3 | SOURCE — Ground / RF return |
MRF8S9100HSR3 안전 동작 영역 (DC)
일반적인 애플리케이션
MRF8S9100HSR3 적합 용도: 6 애플리케이션s: GSM 900 MHz Macro-Cell Base Station Power Amplifier, Cellular Repeater and Signal Booster Power Stage, Public-Safety Land Mobile Radio (LMR) Infrastructure, Industrial RF Heating and Plasma Generators, Two-Way Radio Repeater Infrastructure (DMR / TETRA), Aerospace / UAV Long-Range Data Link Transmitter.
GSM 900 MHz Macro-Cell Base Station Power Amplifier
The MRF8S9100HSR3 fits GSM/GSM EDGE 900 MHz macro-cell base-station final-stage PA duties because it delivers 72 W CW at 920 MHz from a 28 V rail with 19.3 dB power gain and Common Source S-parameter data for accurate load-pull design. Used at the output stage of single-ended or symmetrical Doherty PAs, the part's 70 V VDS rating gives ample margin for VSWR swings. Compared to GaN alternatives the LDMOS die costs less per watt at 900 MHz; downside is lower efficiency than GaN at the same frequency. Pair with a driver stage such as NXP MRF8P9200 and a circulator/isolator at the output.
추천
Cellular Repeater and Signal Booster Power Stage
In a 900 MHz cellular repeater, the MRF8S9100HSR3 functions as the final power amplifier, providing 72 W CW at 28 V to compensate for coax loss in distributed antenna systems (DAS). Its 19.3 dB gain reduces the required gain from upstream driver stages, lowering cost and BOM count; the 865-960 MHz bandwidth covers GSM-900 uplink and downlink in a single match. Stable into a mismatched load (typical for installed repeaters) thanks to the rugged 70 V breakdown. Engineers should add an isolator between the device output and the antenna combiner to protect against reflected power during antenna faults.
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Public-Safety Land Mobile Radio (LMR) Infrastructure
Land Mobile Radio networks at 896-940 MHz use the MRF8S9100HSR3 in base-station PAs because its 865-960 MHz operating band exactly covers the LMR/GSM-900 segment with no retune required, and 72 W CW output drives a sector antenna for several-mile coverage. The NI-780S ceramic flange gives long-term thermal margin in outdoor cabinets where ambient hits 60-70 °C. Compared to TO-220 or plastic-packaged RF parts, the ceramic package's thermal resistance is roughly 4-5x lower, allowing smaller heatsinks. Reliability is critical in public-safety networks, where this part has a decade of field deployment history.
추천
Industrial RF Heating and Plasma Generators
Industrial RF plasma generators operating in the 900 MHz ISM-adjacent band exploit the MRF8S9100HSR3's 72 W CW continuous-duty rating and ceramic air-cavity flange to sustain power into reactive plasma loads. The 70 V VDS withstands the substantial reflected-power transients typical of ignition events in plasma chambers. Stable Class C bias enables high-efficiency operation when linearity is not the priority. Heatsink must be sized for the worst-case full-reflection dissipation, which is roughly 1.5x the matched power, so a forced-air cooled spreader is standard in this application.
추천
Two-Way Radio Repeater Infrastructure (DMR / TETRA)
Digital PMR networks including DMR, TETRA, and PDT at 870-925 MHz use the MRF8S9100HSR3 as a final PA in shared infrastructure. The 72 W CW output gives sufficient link budget to feed multi-site SIMO setups through low-loss combiners. The 28 V bias aligns with telecom rectifier racks, eliminating a separate DC-DC converter. The S-parameter file in the datasheet covers 920 MHz directly, so matching network design converges without broad bench tuning. Carefully bias into Class AB at 500 mA IDQ for clean EVM at the dPMR modulation formats.
추천
Aerospace / UAV Long-Range Data Link Transmitter
UAV command-and-control links in the 902-928 MHz ISM/GSM band use the MRF8S9100HSR3 at the ground station to push 72 W through high-gain antennas for beyond-line-of-sight (BLOS) datalinks. The device's 500 mA IDQ reduces quiescent drain on ground-base power systems, while its 19.3 dB gain simplifies the receiver-side LNA cascade. Selection favours this part over wider-band GaN devices because LDMOS linearity at 900 MHz is more than adequate for COFDM-based UAV links, while drawing less DC quiescent current. Mount on a vibration-tolerant heatsink using the NI-780S flange bolt pattern.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF8S9100HSR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF8S9100HR3 | MRF8S9220HR3 | MRF8S9100GSR3 |
|---|---|---|---|---|
| Package | NI-780S (ceramic air-cavity flange) | NI-780S - same | NI-780S - same | NI-780GS - equivalent |
| Brand | NXP Semiconductors | NXP - same | NXP - same | NXP - same |
| Frequency Range | 865-960 MHz | 865-960 MHz | 865-960 MHz | 865-960 MHz |
| Output Power (CW) | 72 W | 72 W | ~100 W class (22% higher) | 72 W |
| VDS Breakdown Voltage | 70 V | 70 V | 70 V | 70 V |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Power Gain (typical at 920 MHz) | 19.3 dB | 19.3 dB | 17-18 dB (typical for higher-Pout part) | 19.3 dB |
| Package Mount Type | Flange-mount (through-bolt) | Flange-mount | Flange-mount | Surface-mount (NI-780GS) |
주요 차별점
- Highest 900 MHz CW power density in the NXP MRF8S NI-780S family (vs MRF8S9220HR3)
- Tape-and-reel shipping format (vs MRF8S9100HR3)
- NXP/Freescale cross-generation process maturity (vs Generic RF MOSFET equivalents)
설계 노트
Estimated: At 72 W CW output and 28 V VDD, assuming typical LDMOS drain efficiency of ~60%, the device dissipates roughly 48 W of internal heat (Pdiss = Pout/η - Pout). The NI-780S ceramic flange with θJC ≈ 0.45 °C/W yields a junction-to-case temperature rise of ~22 °C from flange to junction at full CW; engineers must size the heatsink so that the flange-to-ambient thermal resistance stays below 2 °C/W (about 25 °C ambient + 22 °C junction rise + design margin keeps Tj < 200 °C). Use a copper-molybdenum spreader between the ceramic flange and the aluminum heatsink to flatten the heat flux on cold plates.
Do not exceed VDSS = 70 V even briefly - clamp the 28 V rail with TVS diodes sized above worst-case inductive kick from the bias choke. The gate is ESD-sensitive (NXP recommends HBM class 1A handling), so gate-network PCB traces must be guarded with low-impedance discharge paths. Quiescent current must be stabilized at 500 mA with a regulated gate bias supply that compensates for thermal drift; without thermal compensation the device will thermally run away at full CW output. Always bias up in the sequence: gate voltage first, then drain voltage, to avoid parametric shifts.
Use a star-ground layout with the source lead flange as the single RF ground reference for both input and output matching networks. The 50 Ω input line must be shorter than λ/8 at 920 MHz (about 8 mm in RO4350B 20-mil substrate) to avoid gain flattening; place the gate bias choke as close as possible to the gate bond pad, with a 10-100 Ω ferrite bead to isolate RF from DC. Output matching should follow the Series Equivalent Large-Signal Impedance Parameters in the datasheet, not the small-signal S-parameters, for production-amplitude Doherty designs.
규정 준수 정보
Per NXP product page, MRF8S9100HSR3 is RoHS compliant. Halogen-free status not specifically stated; consult NXP material declaration. AEC-Q100 not applicable - this is a discrete RF power transistor rather than an automotive-grade IC.
