MRF9045NBR1 - 45W 945MHz RF Power LDMOS Transistor | NXP/Freescale
부품 번호: MRF9045NBR1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $56.4 | $56.40 |
| 10 | $52.18 | $521.80 |
| 100 | $46.75 | $4,675.00 |
| 500 | $42.1 | $21,050.00 |
| 1,000 | $38.95 | $38,950.00 |
MRF9045NBR1 개요
An RF power MOSFET is a discrete lateral double-diffused metal-oxide-semiconductor field-effect transistor optimized to deliver high RF output power at high frequencies. LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) belongs to the silicon transistor family (silicon -> BJT/MOSFET -> LDMOS -> RF power MOSFET), and has become the dominant technology in cellular base-station power amplifiers thanks to its high gain, broadband performance, excellent thermal conductivity, and lower cost-per-watt than equivalent GaN or Si BJT devices.
Key features of the MRF9045NBR1 include 19 dB power gain at 945 MHz, 41% two-tone efficiency, integrated ESD protection, and guaranteed ruggedness into a load mismatch. The lateral N-channel enhancement-mode structure is designed for broadband operation and supports both single-carrier and multi-carrier modulation formats. The 65 V voltage rating and integrated ESD structure simplify board layout while enhancing field reliability in production base-station hardware.
Typical 945 MHz two-tone performance includes 45 W PEP (peak envelope power) output with -31 dBc intermodulation distortion. The device supports N-CDMA and similar linear modulation schemes that demand high linearity and dynamic range. The TO-272-2 ceramic flange package provides a low thermal-resistance path to the heatsink, with a maximum power dissipation rating of 177 W absolute (per secondary distributor data).
Typical applications include cellular base-station power amplifiers at 900 MHz GSM/EDGE and CDMA bands, UHF industrial heating transmitters, land-mobile-radio (LMR) repeaters, ISM-band RF generators, and 945 MHz cellular infrastructure driver/final stages. Designers choose the MRF9045NBR1 when 19 dB gain and 45 W PEP are required at 28 V supply rails in a small flange-mount outline.
When designing with this device, ensure that the RF PCB substrate has controlled-impedance traces (typically 50 ohm microstrip) and that the bolted flange is torqued to the manufacturer-specified value to keep the thermal interface consistent. Because the drain operates at 28 V DC, the matching network, DC blocking, and bypass capacitors must be rated for the full 28 V rail plus transient overshoot from PA load transients.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical RF design notes not found on a single manufacturer datasheet page.
드롭인 대체품: MRF9045NBR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF9045NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF9045LR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF9045LSR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF9045S
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF9045NBR1 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier |
| Drain Voltage (Vds) - Rated | 65 V |
| Test Operating Voltage (VDD) | 28 V |
| Quiescent Current (IDQ) | 350 mA |
| Test Frequency | 945 MHz |
| Output Power (PEP) | 45 W (Two-Tone, 945 MHz) |
| Power Gain | 19 dB (typical at 945 MHz) |
| Drain Efficiency (Two-Tone) | 41% (typical at 945 MHz) |
| Third-Order IMD | -31 dBc (typical at 45 W PEP) |
| Rated Frequency Range | Up to 1000 MHz |
| Configuration | Single, common-source |
| 패키지 | TO-272-2 (ceramic flanged) |
| Maximum Power Dissipation (Abs) | 177 W |
| 습도 민감도 레벨 (MSL) | 3 |
| 실장 유형 | Flange Mount, Surface Mount |
| Lead Free Status | Lead Free (per datasheet) |
| ESD Protection | Integrated |
| Ruggedness | Guaranteed into load VSWR |
MRF9045NBR1 핀 구성
| 핀 1 | Drain — RF drain output / DC supply input (28 V) |
| 핀 2 | Gate — RF gate input / DC bias input |
| 핀 3 | Source — RF/DC ground, flanged body of TO-272 package |
일반적인 애플리케이션
MRF9045NBR1 적합 용도: 6 애플리케이션s: Cellular Base-Station Power Amplifier at 945 MHz, UHF Industrial RF Heating Transmitter, Land-Mobile-Radio (LMR) Repeater Final Stage, ISM-Band 915 MHz RF Generator, Driver/Final Stage for 900 MHz Cellular Infrastructure, N-CDMA Multi-Carrier Power Amplifier.
Cellular Base-Station Power Amplifier at 945 MHz
The MRF9045NBR1's 45 W PEP, 19 dB gain, 41% efficiency, and -31 dBc IMD3 at 945 MHz make it an ideal output stage for cellular base-station PAs in the 900 MHz GSM/EDGE and CDMA bands. Placed in a 50-ohm common-source matching network fed by a 28 V switching supply, it delivers linear amplification with low ACPR. Vs Class-A designs, the MRF9045NBR1's efficiency reduces thermal load and operating cost per watt of radiated RF power. Per the manufacturer datasheet, integrated ESD protection also improves long-term field reliability of finished base-station equipment.
추천
UHF Industrial RF Heating Transmitter
The MRF9045NBR1's broadband response up to 1000 MHz and 45 W CW/PEP capability suit UHF industrial RF heating at 915/945 MHz ISM bands. In a Class-AB amplifier fed from a regulated 28 V rail with 350 mA IDQ, the device provides stable gain and thermal performance even when driving lossy industrial loads with high VSWR. Per the manufacturer datasheet, the guaranteed load-mismatch ruggedness simplifies the protection circuitry required in industrial environments where antenna coupling is variable and unpredictable.
추천
Land-Mobile-Radio (LMR) Repeater Final Stage
The MRF9045NBR1's 19 dB gain at 945 MHz reduces driver-stage complexity in 900 MHz LMR repeaters that must transmit at 45 W PEP into vehicle and base-station antennas. The 28 V supply rail is compatible with typical LMR power buses, and per the manufacturer datasheet the LDMOS structure provides high linearity for FM/PM analog and C4FM/CQPSK digital land-mobile waveforms. Compared to Si bipolar transistors, the LDMOS gain and ruggedness improve reliability at full rated RF output.
추천
ISM-Band 915 MHz RF Generator
For industrial-scientific-medical RF generators operating in the 902-928 MHz ISM band, the MRF9045NBR1 delivers 45 W PEP with broadband flat gain from a single 28 V supply. Per the manufacturer datasheet, the TO-272-2 ceramic flange provides low thermal resistance for sustained CW operation, while the lateral N-channel enhancement-mode structure ensures stable bias across temperature. Vs GaN alternatives at the same output power, the MRF9045NBR1 offers mature, lower-cost silicon technology with well-established vendor support.
추천
Driver/Final Stage for 900 MHz Cellular Infrastructure
The MRF9045NBR1's 45 W PEP and 19 dB gain are well-matched to driver or final stages of 900 MHz GSM/EDGE and CDMA base-station line-ups, where per the manufacturer datasheet the -31 dBc IMD3 distortion meets linearity requirements at rated output. In a two-stage PA chain, the MRF9045NBR1 is typically used as the final or driver stage with a 28 V rail, integrated ESD simplifying the front-end protection, and 41% efficiency reducing heat-sink mass vs older Si BJT designs.
추천
N-CDMA Multi-Carrier Power Amplifier
The MRF9045NBR1's -31 dBc IMD3 and 19 dB gain at 945 MHz support linear N-CDMA multi-carrier PA designs with 1.2288 MHz channel bandwidth and 9.8 dB PAR. Per cross-reference data the device is compared directly with the MRF9060S for similar multi-carrier applications at 880 MHz, where it delivers 14 W average output at 33% efficiency. The 28 V supply and 65 V breakdown rating provide headroom for the high crest-factor waveforms of CDMA and 3G-derived modulation schemes.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF9045NBR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF9045NR1 | MRF9045LR1 | MRF9045LSR1 | MRF9045S |
|---|---|---|---|---|---|
| Manufacturer / Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272-2 | TO-272-2 - same | TO-272-2 - same | TO-272-2 - same | TO-272 (related) - verify |
| Output Power (PEP) | 45 W | 45 W | 45 W | 45 W | 45 W |
| Test Frequency | 945 MHz | 945 MHz | 945 MHz | 945 MHz | 945 MHz |
| Power Gain | 19 dB | 19 dB | 19 dB | 19 dB | 19 dB |
| Drain Voltage (Rated) | 65 V | 65 V | 65 V | 65 V | 65 V |
| Operating Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain Efficiency (Two-Tone) | 41% | 41% | 41% | 41% | 41% |
| IMD3 | -31 dBc | -31 dBc | -31 dBc | -31 dBc | -31 dBc |
| Transistor Type | LDMOS N-Channel | LDMOS N-Channel | LDMOS N-Channel | LDMOS N-Channel | LDMOS N-Channel |
주요 차별점
- 19 dB power gain at 945 MHz reduces driver stage complexity (vs Generic 45 W LDMOS competitors)
- 41% two-tone efficiency reduces heatsink size (vs Si bipolar 45 W PAs)
- Integrated ESD protection reduces field failures (vs Older MOSFET transistors without integrated ESD)
- 65 V drain breakdown provides 28 V headroom margin (vs Lower-breakdown competitor parts at 45 W)
설계 노트
Estimated: at 45 W CW output with 41% drain efficiency, the device dissipates about (45/0.41 - 45) = ~65 W; combined with power input the total internal dissipation reaches ~110 W. The TO-272-2 ceramic flange must be bolted to a heatsink with manufacturer-specified torque and a thin thermal interface material. Use forced-air cooling for sustained CW or PEP operation near 45 W. Insufficient heatsinking is the most common cause of LDMOS failure in production base-station equipment.
Use a controlled-impedance substrate (typically 50-ohm microstrip on FR-4 or Rogers RO4000 series) for the RF input and output matching networks. Per the manufacturer datasheet, gate and drain DC feed lines must be properly bypassed with 100 pF and 1 nF ceramic capacitors placed as close as physically possible to the package leads to suppress common-mode and harmonic content from the 28 V rail. Provide a printed thermal pad layout of the correct bolt-hole pattern for the TO-272-2 flange.
Do not exceed the 65 V drain-source breakdown voltage even under load-mismatch transients. Per the manufacturer datasheet, the device is rated for guaranteed ruggedness into a defined VSWR but unregulated 28 V rails can overshoot above 35 V during hot-switch events and damage the LDMOS die. Add a TVS clamp and a properly sized electrolytic hold-up capacitor at the drain feed to suppress transients. Also, gate-bias sequencing must be applied before or simultaneously with drain voltage to avoid deep-class-C operation at start-up.
규정 준수 정보
RoHS compliant per manufacturer datasheet and distributor listings. Not AEC-Q100 qualified - this is a base-station infrastructure part, not automotive grade.
