MRF9060NR1 - 945MHz 60W RF Power MOSFET TO-270-2 | NXP
부품 번호: MRF9060NR1 ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $34.2 | $342.00 |
| 100 | $28.75 | $2,875.00 |
| 500 | $24.1 | $12,050.00 |
| 1,000 | $20.95 | $20,950.00 |
MRF9060NR1 개요
An RF power MOSFET is a discrete transistor built specifically to amplify radio-frequency signals at high power levels. In the broader taxonomy it sits under discrete semiconductor -> transistor -> MOSFET -> RF MOSFET -> power MOSFET. RF power MOSFETs differ from small-signal MOSFETs in their ability to handle tens to hundreds of watts while maintaining useful gain at RF, and they have largely replaced bipolar transistors in base-station PAs because of their higher gain, easier matching, and better thermal behavior at 28-50 V rails.
Key features of the MRF9060NR1 include 60 W Pout at 945 MHz / 26 V, 18 dB typical power gain, drain efficiency around 33% in single-carrier N-CDMA, and ACPR of -45.7 dBc at 750 kHz offset. The lateral MOSFET architecture provides high gain and broadband response. The TO-270-2 plastic package is leadless and surface-mountable, with a ceramic body and two flanges for source grounding plus a tab for the drain lead. This construction supports efficient thermal dissipation via the package mounting surface.
Typical applications for the MRF9060NR1 include UHF base-station power amplifiers at 470-960 MHz, commercial FM broadcast transmitters, industrial RF heating, and broadband general-purpose RF amplifiers. It is also used as a final-stage or driver in land-mobile radio systems and in amplifier modules for cellular infrastructure where 26 V supplies are standard.
When designing with this device, ensure the input and output matching networks are optimized for the target frequency band. Place a low-impedance source grounding directly under the source flanges, use sufficient copper on the drain pad for thermal relief, and observe the absolute maximum ratings (Vds up to 66 V per cross-reference data). Adequate heatsinking and forced-air cooling are recommended at continuous 60 W operation.
This page synthesizes distributor pricing from DigiKey/Mouser, drop-in alternatives sourced from NXP's MRFE6S series, and practical design notes not aggregated in the original Freescale datasheet.
드롭인 대체품: MRF9060NR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRFE6S9060NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6S9045NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF9060NBR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF9060NR1 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF9060NR1 |
| Technology | Lateral N-Channel Enhancement-Mode MOSFET |
| Frequency Band | Up to 1000 MHz (typical 945 MHz) |
| Output Power (Pout) | 60 W (at 945 MHz, 26 V, single-carrier N-CDMA) |
| Drain Voltage (VDD) | 26 V (typical) |
| Power Gain | 18 dB typical |
| Drain Efficiency | 33% (typical, N-CDMA at 880 MHz, 14 W avg) |
| ACPR | -45.7 dBc at 750 kHz offset |
| Quiescent Current (IDQ) | 450 mA |
| Test Frequency | 945 MHz |
| Maximum Drain-Source Voltage | 66 V (per cross-reference data) |
| 패키지 | TO-270-2 |
| 핀 수 | 2 (Drain, Source/Flange) |
| 실장 유형 | Surface Mount (plastic leadless with ceramic body) |
| Lifecycle | Not Recommended for New Design (NRND); possible replacement MRFE6S9045NR1 / MRFE6S9060NR1 |
MRF9060NR1 핀 구성
| 핀 1 | Drain (Tab) — Drain connection; top tab and pad |
| 핀 2 | Source (Flange) — Source and thermal ground; both side flanges |
DC 안전 동작 영역
일반적인 애플리케이션
MRF9060NR1 적합 용도: 6 애플리케이션s: UHF Base-Station Power Amplifier (470-960 MHz), Industrial RF Heating and Drying, Land-Mobile Radio Final Stage, Broadband General-Purpose RF Amplifier Modules, Aerospace and Defense RF Subsystems, Broadcast and TV Translator Amplifier.
UHF Base-Station Power Amplifier (470-960 MHz)
The MRF9060NR1 is purpose-built for 26 V UHF base-station final-stage amplifiers covering 470-960 MHz, including GSM, IS-95 CDMA, and OFDM LTE bands. Its 60 W Pout at 945 MHz and 18 dB typical gain let it drive the antenna directly from a small pre-driver, simplifying the PA chain. The lateral MOSFET architecture delivers 33% drain efficiency at 14 W avg N-CDMA, reducing heat-sink mass in tower-mounted radios. ACPR of -45.7 dBc at 750 kHz offset satisfies cellular spectral mask requirements. Designers use the device in common-source Class AB with input/output matching on microstrip; compared with bipolar alternatives the MRF9060NR1 offers higher gain per stage and easier broadband matching at UHF.
추천
Industrial RF Heating and Drying
At 60 W continuous and up to 1000 MHz, the MRF9060NR1 is well matched to industrial RF heating, plastic welding, and drying applications. The lateral MOSFET structure tolerates the broadband, high-VSWR loads typical of RF heating applicators and supports continuous-duty operation with proper cooling. Its 26 V supply rails are common in industrial cabinets powered by 24-28 V bus converters, simplifying the power architecture. The TO-270-2 plastic package simplifies mounting on a heatsink block compared to hermetic ceramic RF parts. Compared to vacuum tubes, the MRF9060NR1 provides instant-on operation, lower maintenance, and predictable MTBF in factory automation environments.
추천
Land-Mobile Radio Final Stage
The MRF9060NR1's 18 dB typical gain and 60 W output make it ideal as a final PA in 25-50 W land-mobile radio base stations and repeaters operating in the UHF 450-512 MHz or 800-900 MHz bands. The 26 V bias matches common mobile-radio supply rails, allowing direct use of vehicle or station power. -45.7 dBc ACPR meets narrowband spectral requirements for FM and 4-FSK digital land-mobile standards. The TO-270-2 package withstands shock and vibration typical of mobile installations. Compared to discrete BJT stacks, the MRF9060NR1 simplifies bias, offers wider bandwidth, and reduces part count in the final-stage PA.
추천
Broadband General-Purpose RF Amplifier Modules
Because the MRF9060NR1 is rated for broadband operation up to 1000 MHz, it is widely used as a generic power amplifier in broadband lab amplifiers, EMC test fixtures, and general-purpose RF signal sources. Designers build 50 W - 60 W modules with input matching for 1-1000 MHz coverage, suitable for instrumentation, antenna testing, and RF immunity test beds. The lateral MOSFET's high gain reduces driver-stage complexity. Compared to narrowband parts, the MRF9060NR1 eliminates band-switching networks and reduces calibration time. Pair with a small NXP driver for a complete 60 W broadband PA in a single 2-board assembly.
추천
Aerospace and Defense RF Subsystems
Within aerospace and defense electronics, the MRF9060NR1 is used in countermeasure jammers, IFF transponders, and tactical-radio PA blocks at UHF frequencies where its 60 W output meets emitter-power budgets. The N-channel enhancement-mode lateral MOSFET delivers high gain and excellent ruggedness under high-VSWR load conditions, both critical in fielded military systems. Its surface-mount TO-270-2 package supports modern reflow assembly and reduces chassis depth versus older hermetic RF transistor cans. Compared to legacy bipolar power transistors, the MRF9060NR1 gives 2-3 dB higher gain per stage and better phase-linearity in OFDM waveforms, improving spectral mask margin in modern tactical waveforms.
추천
Broadcast and TV Translator Amplifier
The MRF9060NR1's 945 MHz test point and 1000 MHz bandwidth also suit UHF TV translator and broadcast-engineer exciters in the 470-806 MHz band, where 60 W class amplifiers drive final-stage boosters in retransmission networks. The lateral MOSFET's flat gain across UHF minimizes tuning adjustments between channels, simplifying transmitter maintenance. -45.7 dBc ACPR at 750 kHz offset meets stringent DTV shoulder requirements. Compared to tube transmitters, solid-state MRF9060NR1-based PAs offer hot-swap capability, lower operating voltages, and easy redundancy through parallel PA modules without high-voltage interlocks.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF9060NR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRFE6S9060NR1 | MRFE6S9045NR1 | MRF9060NBR1 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270-2 | TO-270-2 (same) | TO-270-2 (same) | TO-270-2 (same) |
| Frequency Band | Up to 1000 MHz (945 MHz typ.) | 470-960 MHz | 470-960 MHz | Up to 1000 MHz |
| Output Power | 60 W | 60 W | 45 W (-25%) | 60 W |
| Power Gain | 18 dB | 21.1 dB at 880 MHz (+3.1 dB) | ~21 dB at 880 MHz | 18 dB |
| Drain Voltage (VDD) | 26 V (66 V abs max) | 28 V (66 V abs max) | 28 V | 26 V |
| Lifecycle | NRND | Active | Active | NRND |
주요 차별점
- NXP-official drop-in upgrade with higher gain (vs MRFE6S9060NR1)
- Same family with lower power for redundant PA designs (vs MRFE6S9045NR1)
- Same die, alternative packaging orientation (vs MRF9060NBR1)
설계 노트
Estimated: at 60 W RF output and 33% drain efficiency, the MRF9060NR1 dissipates approximately 25-30 W as heat. The TO-270-2 package must be soldered to a copper pad of at least 1 square inch on each side of the drain tab, with thermal vias to internal copper planes, per the Freescale datasheet. For continuous 60 W operation, forced-air cooling with at least 200 LFM airflow is recommended to keep the junction below 150C. Without adequate copper and airflow, junction temperature will exceed the 200C absolute maximum.
Use RF-grade PCB laminate (Rogers RO4003C or equivalent) for the matching network area to minimize insertion loss at 945 MHz. Place the input and output matching components within 3 mm of the package pins. The source flanges must be soldered directly to a continuous ground plane - any gap in the source grounding creates inductance that degrades gain and stability. Add 100 pF bypass capacitors on the drain bias line as close as possible to the drain tab to suppress low-frequency oscillations.
Do not exceed the 66 V absolute maximum drain voltage - load-pull transients from high VSWR can push Vds past this limit during antenna faults. Add a gate clamp circuit (typically a 10 V Zener from gate to source) to protect against overdrive and ESD. Bias sequencing is required: gate voltage must be applied before drain voltage to avoid oxide stress. Many field failures of MRF9060NR1 are traced to missing gate protection rather than to RF overdrive, per the Freescale application notes.
규정 준수 정보
RoHS / REACH / lead-free status not present in verified web data; flagged as [DATA_NEEDED] where used. AEC-Q100 not applicable - this is a discrete RF power MOSFET for industrial / infrastructure use, not automotive-grade. NXP recommends the MRFE6S9060NR1 family for new RoHS-bound designs.
