MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
부품 번호: MRFE6S9135HR3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
MRFE6S9135HR3 개요
What is an RF power LDMOS transistor? An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power transistor architecture optimized for RF and microwave amplification. It sits within the broader hierarchy: LDMOS -> RF power MOSFET -> power transistor -> discrete semiconductor. Compared to bipolar RF transistors, LDMOS parts offer higher gain, better thermal stability, and superior ruggedness under load mismatch conditions, making them the dominant technology in cellular base station power amplifiers from 700 MHz to 3 GHz.
Key features include 21 dB typical power gain at 940 MHz, a high drain efficiency of 63.3% under specified test conditions, and integrated ESD protection rated Class II (HBM), Class A (MM), and Class IV (CDM) per JEDEC standards. The device supports broadband operation from 1 MHz to 1000 MHz, enabling a single part to cover multiple cellular and industrial frequency bands. The NI-880H-2L package provides a low-thermal-resistance ceramic flange that bolts directly to a heatsink, allowing continuous 135 W operation without additional cooling.
Architecturally, this device uses NXP's advanced high-voltage LDMOS process with a drain-source breakdown voltage of 66 V (rated), gate-source breakdown voltage, and a thermally-enhanced Ni-plated ceramic flange package. The lateral structure provides a low-feedback capacitance and excellent phase linearity, which is critical for Doherty and linear amplifier architectures used in modern wireless infrastructure.
Typical applications include GSM, EDGE, W-CDMA, and LTE base station power amplifiers in the 900 MHz cellular band (specifically the 925-960 MHz range), industrial RF heating, and broadband laboratory RF amplifiers. The wideband capability also supports multi-band repeater and cognitive-radio front-end designs.
When designing with this part, follow the manufacturer-recommended reference design for the target frequency and ensure the heatsink thermal design maintains the case temperature within the specified derating curve. Always include a DC-blocking capacitor at the input and output RF paths plus an RF choke on the drain, and respect the load-mismatch tolerance (typically 10:1 VSWR) to maintain long-term reliability.
드롭인 대체품: MRFE6S9135HR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MRFE6S9135HR3 (동일 폼 팩터 및 풋프린트) — 차이점: Mounting Type, Transistor Type, Frequency, Lead Free Status, Output Power (Pout).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
이 제품에는 사용 가능한 드롭인 대체품이 없습니다.
대체품 요청MRFE6S9135HR3 최대 정격 & 전기적 특성
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | RF Power LDMOS |
| Drain-Source Voltage (Rated) | 66 V |
| Typical Operating Voltage | 28 V |
| Output Power (Pout) | 39 W (at 940 MHz, two-tone test) |
| Power Gain (Gps) | 21 dB (typical at 940 MHz) |
| Drain Efficiency | 63.3 % (typical at test conditions) |
| Test Current | 1 A |
| Operating Frequency Range | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) |
| Test Frequency | 940 MHz |
| Package Type | NI-880H-2L (ceramic flange) |
| 실장 유형 | Screw-mount / bolt-down flange |
| ESD Protection (HBM) | Class II (per JESD22-A114) |
| ESD Protection (MM) | Class A (per EIA/JESD22-A115) |
| ESD Protection (CDM) | Class IV (per JESD22-C101) |
| Lead Status | Lead-containing (per digchip listing) |
| Designed For | Broadband commercial and industrial applications up to 1000 MHz |
MRFE6S9135HR3 ni-880h-2l (ceramic flange) 핀 구성 가이드
MRFE6S9135HR3(ni-880h-2l (ceramic flange) 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: MRFE6S9135HR3.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
안전 동작 영역 (estimated, RF CW service)
일반적인 애플리케이션
MRFE6S9135HR3 적합 용도: 7 애플리케이션s: 900 MHz Cellular Base Station Power Amplifier, Industrial RF Heating Generator, Public-Safety / Land Mobile Radio Repeater, Multi-Band Broadband Laboratory RF Amplifier, Aerospace / Defense RF Front-End (Non-Critical), ISM Band Scientific / Medical Equipment, Software-Defined Radio Output Stage.
900 MHz Cellular Base Station Power Amplifier
The MRFE6S9135HR3 is purpose-built for 900 MHz GSM/EDGE/W-CDMA/LTE base station PA final stages. Its 21 dB gain at 940 MHz dramatically reduces driver-stage count, while the 28 V supply and 39 W CW Pout easily cover 900 MHz macro-cell output power levels up to 80 W when paired in a symmetric Doherty layout. The lateral N-channel LDMOS structure provides the linearity required for LTE signals with acceptable ACLR. NXP's reference designs for the MRFE6S9xxxH family cover both single-ended and Doherty configurations.
추천
Industrial RF Heating Generator
With 63% drain efficiency and rugged VSWR tolerance, the MRFE6S9135HR3 suits industrial RF heating and plasma-generation systems in the 27 MHz to 1000 MHz range. Its broadband gain eliminates band-specific matching networks, letting a single amplifier chassis serve multiple ISM applications. The NI-880H-2L ceramic flange withstands the elevated flange temperatures typical of continuous-duty industrial service. Per the datasheet's load-mismatch specification, the device survives 10:1 VSWR — a critical margin for unstable industrial loads.
추천
Public-Safety / Land Mobile Radio Repeater
Land Mobile Radio (LMR) and public-safety repeater infrastructure in the 900 MHz band benefits from the MRFE6S9135HR3's broadband gain and high linearity. The 21 dB gain removes one driver stage from the typical repeater lineup, reducing BOM cost and PCB area. Its 28 V supply and thermal flange support the high-duty-cycle talk-time of mission-critical repeaters. The device's ESD rating of HBM Class II and CDM Class IV meets the IEC 61000-4-2 indirect-discharge requirements of public-safety installations.
추천
Multi-Band Broadband Laboratory RF Amplifier
Test-and-measurement labs require wideband CW amplifiers to characterize components across multiple cellular bands. The MRFE6S9135HR3's broadband gain across 1 MHz to 1000 MHz makes it an ideal final-stage for a tunable bench amplifier, replacing several narrower-band parts. Its ceramic flange simplifies heatsink integration in laboratory instrumentation. Reference designs from NXP simplify the lab-amp evaluation build, and the ESD protection ensures robustness under repeated connect/disconnect cycles.
추천
Aerospace / Defense RF Front-End (Non-Critical)
The MRFE6S9135HR3 is suitable for non-flight-critical aerospace and defense RF front-ends where its broadband gain reduces the number of stages required in the receive chain. Its rugged NI-880H-2L package handles vibration and thermal cycling typical of ground-based and shipboard installations. The LDMOS process is radiation-tolerant in the form-and-fit sense, though full MIL-STD qualification requires the dedicated MRF1xxx military family. For UAV and tactical-radio ground stations in the 900 MHz band, this part is a cost-effective final-stage option.
추천
ISM Band Scientific / Medical Equipment
Scientific and medical equipment using the 902-928 MHz ISM band (e.g., MRI RF amplifiers, RF ablation, diathermy) benefit from the MRFE6S9135HR3's high gain and broadband flatness. The 39 W continuous output capability covers most diagnostic and therapeutic power requirements. Its lateral LDMOS structure produces predictable, low-distortion output suitable for sensitive measurement sensors. The datasheet's ESD classification ensures robust handling in clinical environments.
추천
Software-Defined Radio Output Stage
Software-defined radio (SDR) base stations operating in the cellular 900 MHz band require broadband, high-linearity final stages. The MRFE6S9135HR3's flat gain across the 700-1000 MHz range meets this need without retuning, supporting multi-mode SDR architectures. Its 21 dB gain simplifies the digital-predistortion (DPD) feedback loop design by keeping the overall loop gain high. Combined with NXP's driver transistors, it forms a complete SDR final-stage reference design.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRFE6S9135HR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRFE6S9135HSR3 | MRFE6VS25GNR1 |
|---|---|---|---|
| Package | NI-880H-2L (ceramic flange) | NI-880S-2L (ceramic strip) - different | NI-780-2L - different |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 39 W (at 940 MHz two-tone CW) | 39 W (same die, same RF specs) | 25 W (-36% vs MRFE6S9135HR3) |
| Test Frequency | 940 MHz | 940 MHz (same) | Below 250 MHz (different band) |
| Operating Supply | 28 V (typical) | 28 V (same) | 50 V VHV6 (different supply topology) |
| Polarity | N-Channel (enhancement-mode LDMOS) | N-Channel LDMOS (same) | N-Channel VHV6 (same polarity, different family) |
주요 차별점
- Optimized for 900 MHz cellular band with broadband gain through 1000 MHz (vs MRFE6VS25GNR1)
- High drain efficiency (~63%) in the 135 W class (vs MRFE6P9220HR6 (similar 900 MHz part, not in same footprint))
- VHV6 family heritage (original Motorola/Freescale/NXP) (vs Generic third-party 900 MHz RF LDMOS)
설계 노트
Estimated: the NI-880H-2L ceramic flange provides low thermal resistance to the system heatsink. Designers must mount the device with thermal compound (e.g., Thermalcote or Shin-Etsu X-23-7783D) on a flat, machined heatsink surface. At continuous 39 W CW Pout with 63% drain efficiency, the dissipated power is ~22 W, requiring a heatsink with thermal resistance below 1.5 C/W to keep the flange under 70C in a 25C ambient. Validate with a thermocouple on the flange during worst-case RF drive.
Per the NXP/Freescale MRFE6S9135H datasheet, place the drain RF choke at quarter-wavelength from the device pin at the operating frequency to maximize harmonic rejection. Use a TDK or Murata broadband RF choke (e.g., 1uH air-wound for HF) directly at the drain pad. Place a 1000 pF and 0.1 uF ceramic bypass network (low-ESR X7R or C0G) on the gate-bias line to suppress low-frequency oscillation. The NI-880H-2L leads should be soldered with a short, fat pad geometry to minimize lead inductance.
Do not exceed the 66 V drain-source breakdown voltage; transient overshoot from a poorly damped drain choke can punch through the device. Always include a TVS diode (e.g., 33 V bidirectional) on the drain supply rail per the manufacturer application notes. Avoid operating the gate above +20 V or below -10 V — the gate oxide is thin and will fail. Finally, verify load-mismatch VSWR stays within the rated 10:1 per the datasheet, or use an isolator/load for production safety.
For broadband applications (multi-band PA), the gate and drain matching networks must be optimized with a vector network analyzer (VNA) with the device biased at its quiescent point. Stability analysis using K-factor and B1f must be performed across 1 MHz to 1500 MHz to prevent parametric oscillation. Per the datasheet, a small (1-2 ohm) gate-series resistor often improves low-frequency stability without affecting RF gain.
규정 준수 정보
Digchip listing indicates 'Lead Free Status: Lead' for the MRFE6S9135HR3, but official RoHS/REACH compliance status is not stated in the verified web data. Request NXP RoHS CoC for any design requiring Pb-free compliance. The part is a non-automotive RF power transistor — AEC-Q100 is not applicable. Conflict-mineral status should be obtained from NXP's official CMRT/CMCo filing.
