MRFE6S9201HSR5 - 40W 880MHz RF Power LDMOS NI-780S | NXP
부품 번호: MRFE6S9201HSR5 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $86.5 | $865.00 |
| 100 | $78.2 | $7,820.00 |
| 500 | $71 | $35,500.00 |
| 1,000 | $64.5 | $64,500.00 |
MRFE6S9201HSR5 개요
A lateral double-diffused MOSFET (LDMOS) is a specialized power transistor architecture optimized for RF amplification in the HF to UHF range (typically 1 MHz to 2 GHz). LDMOS technology dominates the cellular base-station transmitter market because it offers high power density, high efficiency, excellent thermal performance, and lower cost per watt than competing bipolar or GaAs technologies. Positioned in the hierarchy: RF power transistor -> RF power MOSFET -> LDMOS -> discrete semiconductor, this category is essential for transmitting high-power RF signals with minimal distortion.
Key features include a 28V nominal drain supply, 1.4 A typical quiescent current, 880 MHz typical operating frequency, 20.8 dB power gain at rated output, and a 66V maximum drain-source voltage rating. The NI-780S ceramic package provides excellent thermal conductivity and is designed for high-power RF performance with internal matching networks that simplify PCB integration at UHF frequencies.
Technically, the MRFE6S9201HSR5 uses NXP's advanced HV6E LDMOS process technology, which delivers high breakdown voltage, high gain across the UHF band, and superior ruggedness under mismatched load conditions. The lateral structure provides low parasitic capacitance and excellent thermal coupling to the ceramic flange, enabling continuous-wave (CW) operation at rated power.
Typical applications include GSM/EDGE base-station power amplifiers, UHF television transmitters, industrial RF heating, scientific RF generators, and two-way land-mobile radio base stations. The 880 MHz target frequency and broadband capability suit cellular infrastructure repeaters and ISM-band power amplifiers.
When designing with this part, ensure the heatsink is properly torqued to the ceramic flange and that the DC blocking and bypass network follows the reference design in the NXP datasheet. Mismatched loads above 10:1 VSWR can damage the device; an isolator or output coupler is recommended in production systems.
This page synthesizes NXP datasheet parameters, distributor pricing, and drop-in alternative notes not consolidated in the manufacturer datasheet alone.
드롭인 대체품: MRFE6S9201HSR5 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRFE6S9201HS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6S9225HSR5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6S9045NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BLF888A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BLF881
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6S9201HSR5 최대 정격 & 전기적 특성
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode |
| Technology | HV6E Lateral MOSFET |
| Maximum Drain-Source Voltage (V DSS) | 66 V |
| Operating Drain Voltage (V DD) | 28 V |
| Typical Operating Frequency | 880 MHz |
| Maximum Frequency | 1000 MHz |
| Output Power (P OUT) | 40 W (CW) |
| Power Gain (G PS) | 20.8 dB at 880 MHz |
| Drain Current (I DQ) | 1.4 A (typical) |
| 패키지 | NI-780S (ceramic flange) |
| 핀 수 | 3 |
| 실장 유형 | Chassis / Flange Mount |
| 동작 온도 | -40C to +150C (junction) |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
MRFE6S9201HSR5 핀 구성
| 핀 1 | Drain — RF output / DC drain supply (28V nominal) |
| 핀 2 | Gate — RF input / DC gate bias |
| 핀 3 | Source — Source connection (also tied to flange ground) |
안전 동작 영역 - DC
일반적인 애플리케이션
MRFE6S9201HSR5 적합 용도: 7 애플리케이션s: GSM/EDGE Base Station Power Amplifier, UHF Television Transmitter, Industrial RF Heating Generator, Two-Way Land Mobile Radio Base Station, Cellular Repeater / Signal Booster, Scientific / Medical RF Power Source, Aerospace RF Amplifier (UHF Band).
GSM/EDGE Base Station Power Amplifier
The MRFE6S9201HSR5 fits 880 MHz GSM/EDGE base-station PA designs where 40W output and 20.8 dB gain from a 28V rail match typical final-stage requirements. Its 20.8 dB gain reduces driver-chain part count, while the NI-780S ceramic package provides the thermal headroom needed for continuous GSM operation at rated P OUT. The HV6E LDMOS process delivers the linearity needed for EDGE 8-PSK modulation. In a production PA, the part is paired with a circulator to protect against antenna VSWR transients.
추천
UHF Television Transmitter
The MRFE6S9201HSR5 is well-suited for UHF DVB-T/DVB-T2 transmitter final stages in the 800-900 MHz band, where 40W output, 20.8 dB gain, and broadband capability align with DVB-T mask requirements. The NI-780S ceramic flange provides the thermal dissipation needed for continuous OFDM signal operation at high PAR. The lateral MOSFET structure produces the linearity required for digital video modulation. Multiple MRFE6S9201HSR5 units can be combined in a Doherty configuration for higher-power transmitters.
추천
Industrial RF Heating Generator
The MRFE6S9201HSR5 fits industrial RF heating generators operating in the 880 MHz ISM-adjacent band for plastics welding, food processing, and drying applications. Its 40W CW power rating, 20.8 dB gain, and 66V V DSS breakdown provide the ruggedness required for industrial CW duty cycles. The NI-780S ceramic package handles the elevated thermal load typical of industrial 24/7 operation. Designers typically use the part in a class-C configuration for maximum efficiency at the 880 MHz target frequency.
추천
Two-Way Land Mobile Radio Base Station
The MRFE6S9201HSR5 is appropriate for the final PA stage in UHF land-mobile-radio (LMR) base stations operating around 800-900 MHz for public-safety and commercial dispatch networks. Its 28V supply, 20.8 dB gain, and 40W output match the 25-50W continuous-duty rating of typical LMR repeaters. The ceramic NI-780S package supports the 100% duty-cycle voice and data modes used in PMR/LMR networks. NXP's HV6E process provides the ruggedness needed for repeater-site thermal environments.
추천
Cellular Repeater / Signal Booster
The MRFE6S9201HSR5 fits 880 MHz cellular signal-booster repeater designs that amplify uplink or downlink signals in the cellular band. Its 40W output (after attenuation to legal EIRP limits) and 20.8 dB gain provide the headroom needed for compensating cable and building losses. The broadband capability allows it to amplify multi-carrier GSM/UMTS signals with reasonable linearity. The NI-780S package handles the continuous-duty operation of always-on repeaters in buildings or tunnels.
추천
Scientific / Medical RF Power Source
The MRFE6S9201HSR5 supports scientific and medical RF power-source applications such as MRI auxiliary RF amplifiers, plasma-generation drivers, and laboratory signal sources in the 800-900 MHz range. Its 40W CW rating, 20.8 dB gain, and stable operation with matched loads meet the precise power requirements of these applications. The NI-780S ceramic package provides the EMI shielding and thermal performance required in medical and laboratory equipment. Stable bias networks enable the predictable operation these applications require.
추천
Aerospace RF Amplifier (UHF Band)
The MRFE6S9201HSR5 is suited for UHF-band aerospace RF amplifiers including telemetry transmitters, ground-station uplink power amplifiers, and UAV command-link PAs operating around 800-900 MHz. Its 40W output, 20.8 dB gain, and rugged ceramic NI-780S package handle the thermal and mechanical stresses of aerospace environments. The 28V rail matches standard aerospace power bus architectures. Designers typically derate output power for reliability margin in flight applications.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRFE6S9201HSR5 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRFE6S9201HS | MRFE6S9225HSR5 | MRFE6S9045NR1 | BLF888A | BLF881 |
|---|---|---|---|---|---|---|
| Package | NI-780S | NI-780S (same) | NI-780S (same) | NI-780S (same) | NI-780S (same) | NI-780S (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (P OUT) | 40 W | 40 W (same) | 60-70 W (+50%) | ~10 W (-75%) | ~50 W (+25%) | ~50 W (+25%) |
| Operating Frequency | 880 MHz | 880 MHz | 880 MHz | 880 MHz | 470-860 MHz DVB-T | UHF broadband |
| Power Gain | 20.8 dB | 20.8 dB | ~20 dB | ~20 dB | ~19 dB | ~19 dB |
| Drain Voltage (V DD) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Maximum V DSS | 66 V | 66 V | 66 V | 66 V | 66 V | 65 V |
| LDMOS Process | HV6E | HV6E | HV6E | HV6E | LDMOS | LDMOS |
주요 차별점
- Targeted 880 MHz optimization with 20.8 dB gain (vs BLF881 (broadband UHF))
- Balanced P OUT vs cost for 40W class (vs MRFE6S9225HSR5)
- Final-stage appropriate gain for low driver chain part count (vs MRFE6S9045NR1)
설계 노트
The NI-780S ceramic flange is the primary thermal path; mount with thermal compound (e.g., Wakefield Type 120 or similar) and torque per the NXP datasheet to 0.5-0.7 N-m. At 40W CW output with 50% efficiency, the part dissipates roughly 40W internally, requiring a heatsink with thermal resistance below 0.5 C/W to keep junction temperature below 150C. Insufficient torque or missing thermal compound causes thermal runaway. Always use a thermocouple on the flange during prototype validation.
The MRFE6S9201HSR5 must be protected from load VSWR above 10:1 sustained; in production PA designs always include a circulator or directional coupler with reflected-power shutdown. Per the NXP datasheet, the device can survive brief mismatches but sustained high-VSWR operation at 40W rapidly destroys the die. Also ensure gate bias is applied before drain voltage during power-up sequencing to prevent oscillation and parametric shifts. A negative gate voltage during turn-off (-5V) is recommended.
Use Rogers RO4350B or RO4003C substrate for the matching network around the device; FR-4 is not suitable at 880 MHz for high-power designs. The input and output matching networks should follow the NXP reference design exactly, including transmission line widths and capacitor values. Place the drain bias feed decoupling (100pF, 1nF, 10nF, 10uF in parallel) within 5mm of the drain lead to suppress RF leakage into the DC supply. Gate bias lines need ferrite beads to isolate RF from the bias supply.
규정 준수 정보
RoHS compliant per NXP product page. AEC-Q100 not applicable for high-power discrete RF transistor. Halogen-free status not explicitly stated in provided data; flagged as unknown.
