MRFE6VP61K25NR6 - 1250W LDMOS RF Power Transistor, 1.8-600 MHz | NXP
부품 번호: MRFE6VP61K25NR6 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $385 | $385.00 |
| 10 | $358 | $3,580.00 |
| 50 | $332 | $16,600.00 |
| 100 | $305 | $30,500.00 |
| 250 | $285 | $71,250.00 |
| 500 | $268 | $134,000.00 |
MRFE6VP61K25NR6 개요
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a type of power MOSFET optimized for high-frequency, high-power amplification in the megahertz to gigahertz range. LDMOS technology combines the high breakdown voltage of a laterally diffused drift region with a low on-resistance MOSFET channel, enabling high output power, good thermal performance, and excellent broadband gain. These devices sit in the broader RF power amplifier hierarchy that includes GaN HEMTs (for higher frequencies and efficiencies) and bipolar RF transistors (legacy VHF designs). LDMOS dominates industrial, broadcast, and mobile-radio applications up through 1 GHz because of its ruggedness and cost structure.
The MRFE6VP61K25NR6 specifically offers 23 dB typical gain at 230 MHz, 50 V drain operation, 100 mA quiescent bias current reference, and is rated for high VSWR loads typical of industrial RF generators. These specifications make the part well-suited for applications where the load can be unpredictable - such as plasma generators, MRI RF amplifiers, and CO2 laser exciters - because the device is designed to survive severe mismatch without destruction.
Typical applications include industrial RF plasma generators, broadcast FM and VHF transmitters, mobile radio base-station power amplifiers, MRI medical imaging, CO2 laser RF exciters, and aerospace HF/VHF power blocks. In each case the wide 1.8 to 600 MHz bandwidth allows one amplifier design to cover multiple bands without component swaps, simplifying inventory and supporting multi-standard platforms.
When designing with this device, pay close attention to DC bias sequencing, gate protection, and thermal management. The OM-1230-4L package requires a properly formed copper or brass heatsink flange; air-only cooling is normally insufficient at full 1250 W CW output. Use NXP's reference evaluation boards and application notes to verify the matching network and harmonic-filter strategy for the target frequency band.
드롭인 대체품: MRFE6VP61K25NR6 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRFE6VP61K25HR6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6VP61K25N
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6VP61K25GN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6VP61K25HSR5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6VP61K25GSR5
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRFE6VP61K25NR6 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors |
| Part Family | MRFE6VP61K25N |
| Technology | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDS) | 50 V |
| Output Power (CW) | 1250 W |
| Frequency Range | 1.8 MHz to 600 MHz |
| Typical Power Gain | 23 dB at 230 MHz |
| Quiescent Current Reference | 100 mA |
| Test Drain Voltage | 50 V |
| Package Type | OM-1230-4L (NI-1230) ceramic air-cavity, flanged |
| 실장 유형 | Chassis / flange mount with screw-down heatsink |
| Operating Mode | CW or pulsed RF amplification |
| Input/Output Match | Unmatched (external broadband matching required) |
| Ruggedness | Designed for high VSWR industrial loads |
MRFE6VP61K25NR6 핀 구성
| 핀 1 | Drain — Drain RF power output lead (connects to drain bias + RF output) |
| 핀 2 | Gate — Gate bias input (-VGS bias, also RF input) |
| 핀 3 | Source — Source tab 1 (RF + DC ground) |
| 핀 4 | Source — Source tab 2 (RF + DC ground) |
| 핀 Flange | Mounting Flange — Mechanical mount to heatsink; also main RF + thermal ground path |
MRFE6VP61K25N Series 안전 동작 영역
일반적인 애플리케이션
MRFE6VP61K25NR6 적합 용도: 6 애플리케이션s: Industrial RF Plasma Generator, CO2 Laser RF Exciter, Broadcast FM/VHF Transmitter, Mobile Radio / Land Mobile Radio Power Amplifier, MRI Medical Imaging RF Amplifier, Aerospace HF/VHF Power Block.
Industrial RF Plasma Generator
The MRFE6VP61K25NR6 is exceptionally well-suited to industrial plasma generators used in semiconductor etching and thin-film deposition. Its 1250 W CW output at 50 V drives plasma chambers at 13.56 MHz and other ISM-band frequencies, all within the device's 1.8-600 MHz range. The 23 dB typical gain at 230 MHz simplifies driver-stage design: a 5-10 W RF source stage combined with this kW-class LDMOS produces full output with only two gain stages, improving overall efficiency. Crucially, plasma loads exhibit high VSWR during ignition and load transitions; the MRFE6VP61K25NR6's high ruggedness lets it survive such mismatches without destruction, a key reason NXP's MRFE6VP61K25N datasheet explicitly targets this application.
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CO2 Laser RF Exciter
In CO2 laser RF exciters operating in the 13-150 MHz range, the MRFE6VP61K25NR6 delivers the high continuous RF power needed to sustain glow discharge in slab and RF-excited gas-laser tubes. Its broadband 1.8-600 MHz range lets a single amplifier hardware platform drive multiple laser-tube configurations by changing the matching-network components rather than the transistor. The OM-1230-4L flanged ceramic package bolts directly to a water- or forced-air heatsink for continuous CW operation at 1250 W, and the unmatched input/output design supports the broad tuning required when the laser-tube impedance shifts with gas chemistry. Per the NXP MRFE6VP61K25N datasheet, the device is explicitly designed for laser/plasma type loads.
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Broadcast FM/VHF Transmitter
The MRFE6VP61K25NR6 provides 1250 W CW for broadcast FM (88-108 MHz) and VHF analog/digital TV amplifier stages, well within its 1.8-600 MHz operating range. With 23 dB typical gain at 230 MHz, the device reduces transmitter chain complexity - one driver stage and one final stage is typically sufficient for full-power broadcast service. The 50 V operating drain voltage is industry-standard for LDMOS broadcast equipment, simplifying power-supply design. NXP's MRFE6VP61K25N datasheet lists broadcast as a target end-use, and NXP's analogous -HSR5 / -GSR5 broadcast-optimized variants share the same OM-1230-4L footprint for transmitter-system designers.
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Mobile Radio / Land Mobile Radio Power Amplifier
The MRFE6VP61K25NR6 covers the entire land-mobile-radio (LMR) and mobile-radio spectrum from HF through VHF-low-band (30-300 MHz) used by commercial and emergency-services base stations. Its 23 dB typical power gain combined with 1250 W CW enables a compact final-stage amplifier design where the previous-generation solution required multiple lower-power devices in parallel. The OM-1230-4L flange simplifies thermal integration into base-station cabinets where cooling-air space is limited. Per the NXP datasheet, the device is ruggedized for high-VSWR loads typical of mobile-radio antenna-failure scenarios such as a broken antenna feed or disconnected antenna during operation.
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MRI Medical Imaging RF Amplifier
The MRFE6VP61K25NR6 is designed into MRI medical-imaging RF amplifiers operating in the 10-100 MHz range (used for clinical MRI at field strengths from 0.5T to 3T). Its low output-noise benefit, combined with 1250 W CW output, supports the high peak-power pulses required for spin excitation. The 50 V drain and proven LDMOS reliability profile (per NXP MRFE6VP61K25N datasheet) suit the stringent uptime and predictability requirements of clinical MRI suites. The ceramic flanged package also simplifies the clean-room integration that medical equipment requires, since the heatsink interface is fully enclosed and does not require additional interior cooling assemblies.
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Aerospace HF/VHF Power Block
In aerospace and airborne communication systems, the MRFE6VP61K25NR6 supports HF (1.8-30 MHz) and VHF (30-300 MHz) high-power amplifier blocks used in avionics communications, electronic-warfare jammers, and other military RF platforms. Per the NXP MRFE6VP61K25N datasheet, aerospace is listed as an explicit target end-market for the part. The unmatched broadband input/output enables a single amplifier hardware design to cover multiple aerospace bands with simple matching-network component changes - vital for size- and weight-constrained airborne platforms. The OM-1230-4L ceramic package also handles altitude-related thermal-load variations better than plastic-packaged alternatives.
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추천 제품 요약
엔지니어링 참조 데이터: MRFE6VP61K25NR6 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRFE6VP61K25HR6 | MRFE6VP61K25N | MRFE6VP61K25GN |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | OM-1230-4L (NI-1230) | OM-1230-4L (NI-1230) - same | OM-1230-4L (NI-1230) - same | OM-1230-4L (NI-1230) - same |
| Output Power (CW) | 1250 W | 1250 W | 1250 W | 1250 W |
| Frequency Range | 1.8-600 MHz | 1.8-600 MHz | 1.8-600 MHz | 1.8-600 MHz |
| Typical Power Gain | 23 dB at 230 MHz | 24 dB at 230 MHz | 23 dB at 230 MHz | 23 dB at 230 MHz |
| Test Drain Voltage | 50 V | 50 V | 50 V | 50 V |
| Technology | LDMOS N-Channel | LDMOS N-Channel | LDMOS N-Channel | LDMOS N-Channel |
| Drain Lead | Single drain lead | Single drain lead | Single drain lead | Single drain lead |
| Packaging Variant | R6 reel | R6 reel | Tray | Tray |
주요 차별점
- Reel-packaged variant for automated assembly (vs MRFE6VP61K25N (tray))
- Lower gain but same ruggedness as H variant (vs MRFE6VP61K25HR6)
- AEC-Q100-style industrial-ruggedized bond wires (vs Lower-tier LDMOS at 100-200 W)
설계 노트
Estimated: At 1250 W CW output and 28% efficiency (typical Class-AB at 1.8-600 MHz), the device dissipates roughly 3200 W as heat. The OM-1230-4L flange requires thermal grease and a forced-air or water-cooled heatsink; case-to-sink thermal resistance of approximately 0.05 C/W puts the flange temperature rise at approximately 160 C above ambient water-intake temperature at 3200 W dissipation. Thermal shutdown protection must be provided in the bias controller because the device has no internal temperature sensor. Refer to NXP's evaluation PCB layout for heatsink-fin spacing guidance.
The PCB land pattern must provide sub-millimeter trace impedance control for the unmatched drain and gate connections. The drain trace should be 50-ohm microstrip at the target frequency (typically 0.8-1.5 mm wide on 0.5-1.6 mm FR-4 of relative permittivity 4.4). Keep gate and drain traces well-separated with a grounded guard ring to prevent unwanted feedback and oscillation; parasitic gate inductance above 1 nH can degrade the 23 dB gain figure and potentially cause out-of-band oscillations below 100 MHz. Follow NXP reference evaluation PCB layouts closely.
Always apply gate-bias before drain-voltage in the DC turn-on sequence; a 50 V drain without gate bias applied first can punch through the gate oxide. Place a Zener diode (15-18 V breakdown) gate-to-source to limit gate-voltage excursions during RF drive or output mismatch. The OM-1230-4L flange screws must be torqued to NXP's specification (typically 2-3 N*m with K-factor appropriate to the heatsink material); under-torqued mounting increases thermal resistance and reduces CW power capability.
규정 준수 정보
RoHS and REACH declarations are not present in the verified distributor listings reviewed as of 2026-10-16. The OM-1230-4L package terminal finish is tin (Sn) per Partstack, indicating lead-free reflow compatibility. AEC-Q100 is not applicable (industrial/commercial RF power transistor rather than automotive-grade).
