MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP
부품 번호: MRFG35003NR5 ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.2 | $162.00 |
| 100 | $14.05 | $1,405.00 |
| 500 | $12.3 | $6,150.00 |
| 1,000 | $10.95 | $10,950.00 |
MRFG35003NR5 개요
A pHEMT (pseudomorphic High Electron Mobility Transistor) is a type of gallium-arsenide (GaAs) RF transistor in which an InGaAs channel is grown on a GaAs substrate with embedded AlGaAs. pHEMT devices offer higher frequency capability, lower noise figure, and higher power density than conventional GaAs MESFETs, placing them in the broader family of compound-semiconductor RF power transistors used in wireless infrastructure, satellite, and radar designs. The MRFG35003NR5 occupies the driver/driver-final niche between small-signal GaAs FETs and high-power LDMOS devices used in macro-cell base-station finals.
Primary features include an unmatched die suitable for Class AB linear operation, broadband performance to 3.6 GHz, stable thermal behavior from the bolt-down PLD-1.5 flange, and a tested gain of 11.5 dB at 3.55 GHz. The part is lead-free and supplied on tape-and-reel as the R5 suffix indicates, with PLD-1.5 enabling direct PCB or heatsink mounting using standard screw-down hardware.
The die uses a GaAs pHEMT process optimized for high linearity and broadband gain, allowing designers to add matching networks tailored to sub-bands such as 2.1 GHz UMTS, 2.7 GHz BWA, or 3.5 GHz WLL/MMDS. Thermal resistance is dominated by the PLD-1.5 flange, which provides a low-impedance path to the system heatsink.
Typical applications include UMTS driver amplifiers, MMDS/WLL base-station drivers, 3.5 GHz BWA transmit chains, and broadband Class AB linear amplifiers for industrial/scientific RF equipment. In each case the MRFG35003NR5 sits between a small-signal pre-driver and a higher-power final stage.
When biasing this device, hold VDS below 15 V and use a regulated negative gate bias to set quiescent current precisely at 55 mA for linear Class AB operation. Always mount the PLD-1.5 flange to a flat heatsink with thermal compound - inadequate thermal coupling will force rapid thermal shutdown.
This page synthesizes distributor pricing, parametric comparison, and design notes not found on the manufacturer datasheet, providing engineers with a single-source reference for the MRFG35003NR5.
드롭인 대체품: MRFG35003NR5 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
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이 제품에는 사용 가능한 드롭인 대체품이 없습니다.
대체품 요청MRFG35003NR5 최대 정격 & 전기적 특성
| 트랜지스터 유형 | pHEMT FET |
| Technology | GaAs pHEMT |
| Frequency | 3.55 GHz (test) |
| Frequency Range | Up to 3.6 GHz |
| Drain-Source Rated Voltage | 15 V |
| Continuous Drain Current | 1.3 A |
| Test Drain Voltage | 12 V |
| Test Drain Current | 55 mA |
| Power Gain (typ) | 11.5 dB @ 3.55 GHz |
| Output Power | 3 W |
| 패키지 / 케이스 | PLD-1.5 (ceramic flange, bolt-down) |
| Supplier Device Package | PLD-1.5 |
| 실장 유형 | Chassis / flange mount with screws |
| Configuration | Single, unmatched die |
| Operating Class | Class AB linear |
| Lead Free Status | Lead-free (per NXP product page) |
| Packaging | Tape & Reel (R5 suffix) |
MRFG35003NR5 핀 구성
| 핀 1 | DRAIN — RF output / drain (connected to PLD-1.5 ceramic body and screw flange) |
| 핀 2 | GATE — RF input / gate (negative bias applied here for Class AB operation) |
| 핀 3 | SOURCE — Source / RF ground (tied to PLD-1.5 flange and chassis) |
안전 동작 영역
일반적인 애플리케이션
MRFG35003NR5 적합 용도: 6 애플리케이션s: UMTS Driver Amplifier, MMDS / WLL Transmit Front End, BWA 3.5 GHz Transmit Driver, Class AB Linear RF Amplifier, Industrial / Scientific RF Generator, Legacy 3.5 GHz Microwave Link Driver.
UMTS Driver Amplifier
The MRFG35003NR5 is well suited as a Class AB linear driver for UMTS base-station transmit chains in the 2.1-2.3 GHz band. Its 11.5 dB typical gain at the manufacturer test bias of 12 V/55 mA delivers roughly 3 W of output when matched, providing the headroom required to push the downstream LDMOS or GaN final to its rated P1dB. Unlike a switching supply, the pHEMT's intrinsic linearity keeps ACLR low for 3GPP signal integrity, and the bolt-down PLD-1.5 flange sinks dissipated heat directly into the system cold plate. Designers add a simple input/output matching network (microstrip or discrete L/C) to optimize for the specific UMTS sub-band. Compared with plastic LDMOS, the GaAs pHEMT offers higher gain per stage and lower feedback capacitance, reducing part count in multi-driver chains.
추천
MMDS / WLL Transmit Front End
At 3.5 GHz the MRFG35003NR5 directly covers the MMDS (Multichannel Multipoint Distribution Service) and Fixed Wireless Local Loop bands used in licensed and unlicensed last-mile broadband. The device's 3 W Pout, 11.5 dB gain, and 15 V VDS rating give designers enough headroom to drive an external GaAs or LDMOS final while staying within linearity targets for QAM/COFDM waveforms. Because the die is unmatched, the engineer can tailor input/output networks to optimize bandwidth and return loss for the 3.4-3.6 GHz MMDS block or the 3.6-3.8 GHz FWA band. The PLD-1.5 flange simplifies mechanical integration into outdoor CPE or hub-mount chassis. Compared with a GaN-on-SiC device, the MRFG35003NR5 is significantly cheaper but with lower efficiency and ruggedness.
추천
BWA 3.5 GHz Transmit Driver
Broadband Wireless Access networks at 3.5 GHz rely on linear drivers that combine flat gain, low distortion, and stable thermal behavior. The MRFG35003NR5 delivers 11.5 dB gain across the 3.4-3.6 GHz BWA block and supports 3 W output at 12 V/55 mA bias, making it a strong fit for BWA driver stages in CPE modems and hub-side transmit chains. The PLD-1.5 ceramic flange provides direct thermal coupling to aluminum cold plates typical in BWA outdoor enclosures. Engineers typically add a 2-section microstrip matching network on RO4003 substrate to flatten gain within +/-0.5 dB across the BWA passband. Compared with plastic LDMOS, the GaAs pHEMT yields higher gain per stage, simplifying BDA cascade design and lowering BOM cost.
추천
Class AB Linear RF Amplifier
The MRFG35003NR5 is designed for Class AB linear operation, where a regulated negative gate bias sets IDQ around 55 mA and the device amplifies RF signals with minimal distortion. This topology is preferred for multi-carrier GSM/EDGE, UMTS, and OFDM waveforms that demand low ACLR and EVM. The 3 W Pout and 11.5 dB gain support pre-driver or driver stages, while the PLD-1.5 flange ensures stable thermal operation even at sustained CW input. Engineers should stabilize the bias network with source resistors to prevent low-frequency oscillation and use a regulated gate supply to keep IDQ constant across temperature. Compared with Class C designs, Class AB with this pHEMT delivers far cleaner spectrum for licensed wireless services.
추천
Industrial / Scientific RF Generator
Laboratory RF generators, plasma sources, and 3.5 GHz industrial heating/drying equipment often need a stable, linear driver in the 3-3.6 GHz band. The MRFG35003NR5's matched test bias (12 V/55 mA) and 3 W Pout are well suited for instrumentation pre-driver stages where spectral purity matters more than raw efficiency. The PLD-1.5 bolt-down package integrates cleanly into shielded RF chassis, and the unmatched die allows designers to add harmonic filters or pad attenuators for instrument-grade accuracy. Compared with plastic LDMOS, the GaAs pHEMT's lower intermodulation distortion gives cleaner 3rd/5th-order products, an advantage for spectroscopy and plasma diagnostics. Engineers can re-bias the device to lower IDQ for CW-only use cases.
추천
Legacy 3.5 GHz Microwave Link Driver
Microwave point-to-point links in the 3.5 GHz band - common in CCTV backhaul, campus networks, and rural broadband - use linear driver stages that the MRFG35003NR5 directly supports. The 11.5 dB gain and 3 W Pout allow it to drive a downstream GaAs power FET or LDMOS final, while its unmatched die lets designers optimize for the specific channel width and modulation scheme. The PLD-1.5 flange is a standard microwave-industry footprint, simplifying drop-in retrofit of legacy links. Because the part is obsolete, designers of new links should evaluate MRFG35003MR5 (same die) or migrate to a GaN HEMT such as CGH40010F for long-term supply security. Thermal management via the bolt-down flange remains essential at continuous-duty backhaul loads.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRFG35003NR5 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRFG35003MR5 | MRFG35003NBR5 | MRFG35010NR5 | MRF1513NT1 | MRF1535NT1 |
|---|---|---|---|---|---|---|
| Package | PLD-1.5 | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Transistor Type | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | Si LDMOS | Si LDMOS |
| Output Power (Pout) | 3 W | 3 W | 3 W | 10 W | 3 W | 35 W |
| Test Frequency | 3.55 GHz | 3.55 GHz | 3.55 GHz | 3.55 GHz | 520 MHz | 520 MHz |
| Power Gain (typ) | 11.5 dB | 11.5 dB | 11.5 dB | 10.5 dB | 11 dB | 13 dB |
| Drain Voltage (VDS max) | 15 V | 15 V | 15 V | 15 V | 12.5 V | 12.5 V |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
주요 차별점
- Optimized pHEMT linearity for 3.5 GHz driver stages (vs MRF1513NT1)
- Lower output power tier reduces thermal load (vs MRFG35010NR5)
- Industry-standard PLD-1.5 bolt-down footprint (vs MRF1535NT1)
설계 노트
The PLD-1.5 ceramic flange is the primary thermal path. Apply a thin, even layer of high-quality thermal compound (e.g. Shin-Etsu X-23-7762 or 3M TC-2810) between the flange and a flat aluminum cold plate held to <0.05 mm flatness. Estimated: at 3 W Pout and 50% efficiency, the device dissipates roughly 3 W; without a heatsink capable of <5 C/W, junction temperature will rise beyond the safe operating limit within seconds. Always torque mounting screws gradually and evenly to avoid cracking the ceramic body.
Solder 50-ohm microstrip launch lines directly to the gate and drain leads of the PLD-1.5, keeping lead length below 1 mm to preserve 3.5 GHz performance. Use RO4003C or RO4350B substrate with 0.5 oz copper and ENIG finish for stable impedance. Place input/output DC-blocking capacitors (100 pF NP0/C0G) within 2 mm of the gate and drain leads to isolate the RF from the bias tees. Add 1 nF and 10 uF bypass capacitors on the drain supply feed to suppress low-frequency oscillation.
Do not exceed the 15 V VDS absolute maximum - avalanche breakdown of the GaAs pHEMT channel is irreversible. Always power the device with the gate biased negative FIRST, then ramp VDS; reverse-sequence power-up can cause uncontrolled IDQ spikes. For Class AB linear operation, hold IDQ at 55 mA by adjusting gate voltage; values above 80 mA will degrade linearity. Avoid running into a high-VSWR load without an isolator - the unmatched die has no internal ruggedness protection.
Design input and output matching networks on separate substrate areas to maximize isolation between gate and drain traces - target >30 dB reverse isolation at 3.55 GHz. Use bond-wire or ribbon transitions if adapting to other packages, keeping lead inductance below 0.5 nH. Maintain a continuous RF ground plane under the PLD-1.5 flange with at least 12 via holes stitching the top and bottom ground layers around the mounting footprint to suppress parallel-plate modes.
규정 준수 정보
Lead-free per NXP product page. RoHS compliance stated on distributor listings. Halogen-free status not explicitly confirmed in the verified web data - marked unknown.
