MRFG35005NT1 - 4.5W GaAs PHEMT RF Power FET, 3.5 GHz | NXP
부품 번호: MRFG35005NT1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $22.5 | $22.50 |
| 10 | $20.25 | $202.50 |
| 100 | $18 | $1,800.00 |
| 500 | $16.2 | $8,100.00 |
| 1,000 | $14.5 | $14,500.00 |
MRFG35005NT1 개요
An RF power FET is a specialized discrete transistor, typically built on a III-V compound semiconductor such as gallium arsenide (GaAs) or gallium nitride (GaN), that is engineered to amplify high-frequency signals into the multi-Watt regime. PHEMT technology sits in the hierarchy: transistor -> FET -> HEMT -> PHEMT -> RF power FET, offering higher electron mobility and lower noise figure than conventional silicon MOSFETs at microwave frequencies. The GaAs PHEMT construction makes it well suited for class-AB linear amplification in the 2-4 GHz bands commonly used in fixed wireless access and 3G/4G infrastructure.
Key electrical features include a 15 V drain voltage rating, 1.7 A continuous drain current, an idle point of 650 mA for single-carrier W-CDMA, a typical W-CDMA P1dB in the 4.5 W region, and 11 dB linear power gain at 3.55 GHz. The device is supplied UNMATCHED - the source and load impedance matching networks must be realized externally, which gives designers freedom to optimize harmonic terminations for a specific band.
The PLD-1.5 over-molded plastic package provides a robust SMT-compatible footprint with low parasitic inductance for frequencies into the multi-GHz range. The plastic encapsulant, however, limits the thermal dissipation path: the maximum channel temperature must remain at or below 150 C, so careful heatsinking and PCB copper thermal management are required in production layouts. Because the device is unbiased from a 5 V logic rail, a dedicated 12 V driver stage is required upstream of the final amplifier.
Typical applications include WLL/MMDS/BWA base-station driver amplifiers, UMTS/W-CDMA front-end driver stages for picocell and microcell radios, and 1.8-3.6 GHz general-purpose linear RF power blocks. Because the device is class-AB capable, it also suits TDD link-burst stages where fast gating and good linearity are simultaneously required.
When designing with this part, plan the bias network around 12 V with sufficient decoupling, and use a minimum 1 oz copper pour on the drain pad to spread heat. Always confirm with the NXP MRFG35005N datasheet that your intended bias current and channel-temperature margin fit within the SOA envelope for the chosen modulation format.
This page synthesizes distributor pricing, drop-in NXP family options, and practical design guidance not consolidated anywhere else in the MRFG35005N datasheet series.
드롭인 대체품: MRFG35005NT1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRFG35005M
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRFG35005ANT1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRFG35005NT1
✅ 드롭인✓ 재고 있음
$14.5 / 개
데이터시트 보기 →MRFG35005NT1 최대 정격 & 전기적 특성
| 트랜지스터 유형 | pHEMT GaAs RF Power FET |
| Technology | GaAs PHEMT (Pseudomorphic HEMT) |
| Operating Frequency Range | 1.8 GHz to 3.6 GHz |
| Typical Test Frequency | 3.55 GHz |
| Drain-Source Voltage Rating (Vds max) | 15 V |
| Test Bias Voltage (VDD) | 12 V |
| Test Quiescent Current (IDQ) | 80 mA |
| W-CDMA Quiescent Current (typ) | 650 mA |
| Continuous Drain Current Rating | 1.7 A |
| Output Power (Pout) typical at 3.55 GHz | 4.5 W |
| Small-Signal Power Gain | 11 dB at 3.55 GHz, 12 V / 80 mA |
| 패키지 / 케이스 | PLD-1.5 (CASE 466-03, Style 1), plastic over-molded |
| 실장 유형 | Surface Mount |
| Matching | Unmatched (external input/output matching required) |
| Application Class | Class AB linear |
| Target Applications | WLL / MMDS / BWA / UMTS driver |
| Maximum Channel Temperature | 150 C |
| Lead Free Status | Yes (per distributor listing) |
| RoHS 상태 | Compliant (per distributor listing) |
MRFG35005NT1 핀 구성
| 핀 1 | GATE — RF input (gate bias connection) |
| 핀 2 | DRAIN — RF output / DC drain bias (12 V VDD) |
| 핀 3 | SOURCE — Source and thermal pad (case ground on underside) |
안전 동작 영역 - estimated from 4.5 W Pout and 15 V Vds max
일반적인 애플리케이션
MRFG35005NT1 적합 용도: 6 애플리케이션s: WLL / MMDS Base-Station Driver Amplifier, UMTS / W-CDMA Driver Stage, BWA (Broadband Wireless Access) Transmit Chain, Industrial / Scientific 3.5 GHz Driver, TDD Radio Link-Burst Driver, General 1.8-3.6 GHz Class-AB Linear Amplifier Block.
WLL / MMDS Base-Station Driver Amplifier
The MRFG35005NT1 fits this application because its 11 dB linear gain at 3.55 GHz and 4.5 W Pout at 12 V VDD sit squarely in the driver-amplifier window for 3.5 GHz WLL and MMDS radios. Per the NXP MRFG35005N datasheet, the device is explicitly characterized for class-AB linear driver use across 1.8-3.6 GHz, which is exactly the licensed and unlicensed band plan used by these multipoint distribution services. In a typical board it sits between an upstream LNA/driver and a higher-power final PA, biased at 12 V with IDQ near 650 mA for W-CDMA single-carrier service. The unmatched I/O gives the RF designer freedom to tune harmonic terminations for the MMDS channel plan, which directly improves ACPR. The trade-off vs. a fully-matched alternative is a more complex PCB layout and a mandatory matching-network tuning pass, but the 11 dB available gain headroom compensates for any matching-network loss at the band edges.
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UMTS / W-CDMA Driver Stage
In UMTS and W-CDMA radio heads the MRFG35005NT1 is used as a linear pre-driver where spectral regrowth (ACLR) and EVM matter more than saturated output. Per the NXP MRFG35005N datasheet, the part is characterized at VDD = 12 V with IDQ = 650 mA for single-carrier W-CDMA operation, putting it in the class-AB bias sweet spot for 3GPP signal integrity. Its 4.5 W Pout at 3.55 GHz comfortably drives a downstream final PA stage of the 20-30 W class without forcing the chain into saturation. Because the device is unmatched, designers can implement a small-signal pre-driver PCB that doubles as a 1.8-3.6 GHz wideband amplifier block. The 150 C channel-temperature limit must be respected with adequate copper thermal area on the drain pad, especially in sealed outdoor radio heads with limited airflow. The downside is that ACLR must be re-tuned per band, since the input match optimization shifts with frequency.
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BWA (Broadband Wireless Access) Transmit Chain
The MRFG35005NT1 suits BWA transmit chains operating in the 3.5 GHz citizens-broadband and licensed-band plans (CBRS-adjacent, ECC-style allocations). Per the NXP MRFG35005N datasheet, the 1.8-3.6 GHz coverage sweeps the majority of the 3.5 GHz BWA band without an external up-converter, saving board area and BOM cost. Its 4.5 W Pout at 12 V fits a small-cell or customer-premises-equipment (CPE) radio nicely, providing enough gain that a simple front-end module can be assembled with just the MRFG35005NT1 plus a final PA. Being GaAs PHEMT, it delivers the high linearity and low intermodulation required for OFDMA-style BWA waveforms, even when the PA is pushed into class-AB gain compression for efficiency. The thermal budget on a CPE board is the typical engineering constraint, so generous copper pad area and a small clip-on heatsink are recommended at sustained 4-5 W Pout.
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Industrial / Scientific 3.5 GHz Driver
Industrial and scientific users commonly need a robust RF driver in the unlicensed 3.5 GHz band for radar, ISM-style telemetry, or test-and-measurement signal sources. The MRFG35005NT1 hits this niche because it offers 11 dB of controlled gain with a known SOA envelope and a documented 150 C channel-temperature limit, simplifying reliability justification for non-carrier equipment. Per the NXP MRFG35005N datasheet, the unmatched I/O means the device can be configured as a tunable laboratory amplifier for 1.8-3.6 GHz with a quick bias adjustment. In a test-bench setup a typical bias is 12 V at IDQ near 80 mA for small-signal use, and 650 mA for the W-CDMA single-carrier ratings. The combination of 4.5 W output and a plastic SMT-friendly package makes it a frequent pick for laboratory PA prototypes that need to convert a clean signal-generator output into a useful 30+ dBm drive level.
추천
TDD Radio Link-Burst Driver
Time-division-duplex (TDD) radio links such as WiMAX-derived and proprietary private-network backhaul drivers require fast gating and good linearity at the burst envelope - both of which the MRFG35005NT1 supports. Per the NXP MRFG35005N datasheet, the GaAs PHEMT construction enables rapid bias settling and stable gain across the 1.8-3.6 GHz range, which is critical for short-burst TDD waveforms where the amplifier has only a few microseconds to stabilize. Its 11 dB small-signal gain lets the part act as both driver and modest final PA in a small-form-factor TDD node, with a transmit/receive switch following the device. The 4.5 W saturated Pout is well suited for short-range point-to-point links and small-cell backhaul radios, where link-budget demands are modest but spectral cleanliness matters. Designers should pay attention to bias-circuit settling time, because GaAs PHEMTs can show thermal hysteresis if the IDQ is set too close to class-C.
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General 1.8-3.6 GHz Class-AB Linear Amplifier Block
For any general-purpose design that needs a class-AB linear amplifier block in the 1.8-3.6 GHz range with a documented 4-5 W Pout and 11 dB gain budget, the MRFG35005NT1 is a stock candidate. Per the NXP MRFG35005N datasheet, the device is documented for both small-signal (80 mA IDQ) and W-CDMA single-carrier (650 mA IDQ) operation, which makes it flexible across the typical range of linear-RF applications. Designers frequently use it as the gain stage in custom laboratory amplifiers, test fixtures, and one-off research demonstrators where the unmatched I/O allows full freedom of PCB tuning. The plastic PLD-1.5 over-molded package keeps cost and assembly complexity low, which is why it shows up in many university and OEM reference designs. The trade-off vs. a fully-matched alternative is the requirement to design external matching networks; the upside is the same silicon supports several bands with different matching networks on the same PCB footprint.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRFG35005NT1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRFG35005M | MRFG35005ANT1 | MRFG35005NT1 (Rochester) |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors (alternate channel) |
| Package / Case | PLD-1.5 (CASE 466-03, Style 1) - plastic over-molded SMT | Same PLD-1.5 family (alternate mechanical case style) | Same PLD-1.5 (CASE 466-03, AN variant) | Same PLD-1.5 (CASE 466-03, Style 1) |
| Operating Frequency Range | 1.8 GHz to 3.6 GHz (test point 3.55 GHz) | 1.8 GHz to 3.6 GHz | 1.8 GHz to 3.6 GHz | 1.8 GHz to 3.6 GHz |
| Test Bias (VDD / IDQ) | 12 V / 80 mA (small-signal); 650 mA (W-CDMA) | 12 V / 80 mA; 650 mA W-CDMA | 12 V / 80 mA; 650 mA W-CDMA | 12 V / 80 mA; 650 mA W-CDMA |
| Output Power (Pout) at 3.55 GHz | 4.5 W typical | 4.5 W typical | 4.5 W typical | 4.5 W typical |
| Small-Signal Power Gain | 11 dB at 3.55 GHz | 11 dB at 3.55 GHz | 11 dB at 3.55 GHz | 11 dB at 3.55 GHz |
| Matching | Unmatched (external I/O matching required) | Unmatched | Unmatched | Unmatched |
| Maximum Channel Temperature | 150 C | 150 C | 150 C | 150 C |
주요 차별점
- Same-die drop-in across the entire MRFG35005 family (vs MRFG35005M)
- Authorized-channel second sourcing via Rochester Electronics (vs MRFG35005NT1 (Rochester Electronics distributor listing 12616256))
- AN-package option exists on identical die (vs MRFG35005ANT1)
설계 노트
Estimated: with 4.5 W Pout, 12 V VDD and IDQ around 650 mA for W-CDMA service, the DC input power is roughly 7.8 W. The PLD-1.5 plastic over-molded package has limited thermal mass; design a minimum 1 oz copper pour under the drain pad, preferably 2 oz, and consider a clip-on aluminum heatsink for continuous-duty 4-5 W Pout applications. Confirm channel temperature against the 150 C limit by placing a thermocouple on the case during worst-case SOA testing - never operate the part above 150 C channel temperature per the NXP MRFG35005N datasheet.
Use a low-loss RF substrate (Rogers RO4003C or FR4 with controlled-impedance Dk) and design the input and output microstrip matching networks as close as possible to the gate and drain leads to minimize parasitic inductance. Keep the gate and drain traces on the top layer with a continuous ground plane on layer 2, and stitch the ground pours with sufficient vias (every 2-3 mm at 3.5 GHz). Place bias decoupling capacitors as close to the gate and drain as the matching network allows, with a 100 nF ceramic right at the bias feed and a 10 uF tantalum or ceramic bypass further upstream on the 12 V rail.
Three common pitfalls: (1) using the MRFG35005NT1 as a fully-matched drop-in without designing external matching - the device is shipped UNMATCHED, so omitting the input/output matching network results in gain loss and instability; (2) biasing with a simple resistor network instead of an active bias circuit - this lets IDQ drift with temperature and can push the device into class-C or thermal runaway; (3) neglecting the 150 C channel-temperature limit on the plastic PLD-1.5 case, which lacks the thermal headroom of a ceramic package. Address all three by following the reference circuits in the NXP MRFG35005N datasheet.
규정 준수 정보
RoHS compliant and lead-free per distributor listings (DigiKey 1168620 and 12616256). Not AEC-Q100 qualified - this part targets WLL/MMDS/UMTS base-station equipment rather than automotive. REACH, halogen-free, and conflict-minerals status not explicitly published; treat as unknown and confirm with NXP for production qualification.
