MT41K128M16JT-125-ITK - 2Gb DDR3L SDRAM 1.35V | Micron
부품 번호: MT41K128M16JT-125-ITK ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $13.43 | $13.43 |
| 10 | $12.55 | $125.50 |
| 100 | $11.8 | $1,180.00 |
| 500 | $11.2 | $5,600.00 |
| 1,000 | $10.6 | $10,600.00 |
MT41K128M16JT-125-ITK 개요
DDR3L SDRAM is the low-voltage version of the DDR3 SDRAM standard, operating at 1.35 V instead of 1.5 V while remaining backward compatible: the device can also run in 1.5 V DDR3-compatible mode, in which case the 1.5 V DDR3 datasheet specifications apply. In the memory hierarchy it sits in the DRAM component category, serving as main-system memory downstream of processors, FPGAs, and SoCs that include an integrated DDR3/DDR3L memory controller.
Key features of the -125 IT:K grade include an industrial operating temperature range of -40C to +95C, auto self-refresh, auto precharge, asynchronous reset, data mask (DM) for byte-wise write masking, dynamic on-chip termination (ODT), ZQ calibration, and write leveling - features that simplify controller bring-up and signal integrity at 1600 MT/s.
Technically, the device uses an 8n-bit prefetch architecture with a bidirectional differential data strobe (DQS) and a fly-by command/address topology. The 16-bit organization requires only one chip per 16-bit memory bus, reducing BOM cost and layout complexity in space-constrained industrial designs. The 96-ball FBGA (8x14) lead-free package supports standard DDR3 routing with length-matched trace groups.
Typical applications include FPGA-based industrial controllers (e.g., Xilinx 7-series with MIG controller), embedded Linux single-board computers, networking line cards, test and measurement instruments, and vision systems buffering image sensor data.
Design consideration: DDR3L fly-by routing requires careful length matching within byte lanes; use the vendor MIG/IP core and follow Micron's DDR3 design guide for ODT and ZQ resistor placement (240 ohm, 1% to ZQ pin).
This page synthesizes distributor pricing, drop-in cross-references, and practical DDR3L design notes not found in the manufacturer datasheet.
드롭인 대체품: MT41K128M16JT-125-ITK — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MT41K128M16JT-125-ITK (동일 폼 팩터 및 풋프린트) — 차이점: Asynchronous Reset, Clock Frequency, Operating Temperature, Write Leveling.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MT41K128M16JT-125:K
✅ 드롭인✓ 재고 있음
$9.75 / 개
데이터시트 보기 →MT41K128M16JT-125 XIT:K
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT41K128M16JT-107 IT:K
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT41K128M16JT-125 AAT:K
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AS4C128M16D3L-12BAN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IS43TR16128CL-125KBLI
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
HGD32G16M16
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT41K128M16JT-125-ITK 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3L SDRAM |
| 메모리 크기 | 2 Gbit |
| Memory Organization | 128M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz (DDR3L-1600) |
| Access Time | 13.75 ns |
| 공급 전압 | 1.35 V (1.5 V DDR3-compatible mode supported) |
| 동작 온도 | -40C to +95C |
| 패키지 | 96-FBGA (8x14 mm) |
| 실장 유형 | Surface Mount |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask Function | Yes |
| Dynamic On-Chip Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| RoHS 상태 | Compliant |
MT41K128M16JT-125-ITK 96-fbga (8x14 mm) 핀 구성 가이드
MT41K128M16JT-125-ITK(96-fbga (8x14 mm) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: MT41K128M16JT-125-ITK.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
MT41K128M16JT-125-ITK 적합 용도: 6 애플리케이션s: FPGA-Based Industrial Controllers, Embedded Single-Board Computers, Networking and Communication Equipment, Machine Vision and Image Buffering, Test and Measurement Instruments, Medical and Diagnostic Equipment.
FPGA-Based Industrial Controllers
The MT41K128M16JT-125-ITK is a natural memory for Xilinx 7-series and Zynq FPGA platforms: the Vivado MIG controller natively supports DDR3L at 1600 MT/s and leverages the device's write leveling, ZQ calibration, and dynamic ODT for robust fly-by-free x16 point-to-point routing. Its -40C to +95C industrial rating matches the extended temperature range of industrial-grade FPGAs such as the XC7A35T-2FTG256I, ensuring timing closure across the full ambient range. A single 2 Gbit x16 device provides 256 MB of buffer memory for process data, logging, and HMI frame buffers without the cost and layout burden of two x8 parts.
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Embedded Single-Board Computers
For ARM-based embedded Linux SBCs, the 2 Gbit density and x16 organization let one MT41K128M16JT-125-ITK supply the full 16-bit or half of a 32-bit DDR3L bus at 1.35V, cutting DRAM power roughly 15% versus 1.5V DDR3 at the same performance point. DDR3L-1600 bandwidth (12.8 GB/s per x16 device) comfortably supports Cortex-A class SoCs running Linux with graphical interfaces. The asynchronous reset and auto self-refresh features simplify suspend/resume power sequencing, while the industrial -40C to +95C rating suits unattended edge deployments such as smart metering gateways and remote telemetry concentrators.
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Networking and Communication Equipment
Line cards, switches, and industrial Ethernet nodes use DDR3L SDRAM for packet buffering and descriptor rings. The MT41K128M16JT-125-ITK's 12.8 GB/s peak bandwidth per x16 device sustains multi-gigabit traffic aggregation, and its data mask (DM) capability enables efficient partial-buffer writes during packet reassembly. Two devices on a 32-bit bus double buffering to 512 MB. The 1.35V operation reduces DRAM rail power in always-on network equipment, and the industrial temperature range supports hardened outdoor and factory-floor infrastructure such as IP67 switches and 5G small-cell aggregation units.
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Machine Vision and Image Buffering
High-resolution image sensors generate data streams that exceed on-chip SRAM capacity, so DDR3L SDRAM is used as frame buffer memory between the sensor interface and the processing pipeline. The MT41K128M16JT-125-ITK's DDR3L-1600 rate supports sustained write bandwidth for multi-megapixel sensors at 30-60 fps, while the x16 single-chip organization minimizes routing on dense camera boards. ZQ calibration maintains output driver impedance across the -40C to +95C industrial range, preserving signal integrity in thermally dynamic inspection cells, and dynamic ODT lets the controller adapt termination for write/read turnaround.
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Test and Measurement Instruments
Oscilloscopes, logic analyzers, and data acquisition systems require deep, high-bandwidth capture memory. The MT41K128M16JT-125-ITK provides 256 MB per device at 12.8 GB/s per x16 bus, enough for long record-length acquisitions when multiple devices operate in parallel with bank interleaving. Its 1.35V DDR3L operation reduces thermal load inside sealed instrument enclosures, and the -40C to +95C rating covers bench-to-field deployment. Micron's published ZQ calibration and write-leveling sequences integrate cleanly with instrument-grade memory controllers built on FPGAs such as the Artix-7 and Kintex UltraScale families.
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Medical and Diagnostic Equipment
Portable and benchtop diagnostic instruments - patient monitors, ultrasound front ends, and lab analyzers - use DDR3L SDRAM for waveform buffers and image processing working memory. The 1.35V supply lowers operating power in battery-powered portable designs, extending runtime compared with 1.5V DDR3, while auto self-refresh supports low-power standby between measurements. The MT41K128M16JT-125-ITK's industrial temperature range and RoHS compliance align with medical device manufacturing requirements, and a single x16 device simplifies layout on compact, high-mixed-signal boards where DDR3 routing must be isolated from sensitive analog front ends.
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추천 제품 요약
엔지니어링 참조 데이터: MT41K128M16JT-125-ITK — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MT41K128M16JT-125:K | MT41K128M16JT-107 IT:K | AS4C128M16D3L-12BAN | IS43TR16128CL-125KBLI |
|---|---|---|---|---|---|
| Package | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (9x13 mm body) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | ISSI |
| Density / Organization | 2 Gbit, 128M x16 | 2 Gbit, 128M x16 | 2 Gbit, 128M x16 | 2 Gbit, 128M x16 | 2 Gbit, 128M x16 |
| Speed Grade | DDR3L-1600 (800 MHz, CL11) | DDR3L-1600 (800 MHz, CL11) | DDR3L-1866 (933 MHz, CL13) | DDR3L-1600 (800 MHz) | DDR3L-1600 (800 MHz, CL11) |
| Supply Voltage | 1.35 V (1.5 V compatible) | 1.35 V (1.5 V compatible) | 1.35 V (1.5 V compatible) | 1.35 V (1.5 V compatible) | 1.35 V (1.5 V compatible) |
| Automotive Grade | No | No | Yes (AEC-Q100, +105C) | No | No |
| Key Features | Auto self-refresh, write leveling, ZQ cal, dynamic ODT, DM | Same feature set | Same feature set, faster tCK | Comparable DDR3L feature set | Comparable DDR3L feature set |
주요 차별점
- Industrial -40C to +95C rating at commercial-market availability (vs MT41K128M16JT-125:K)
- Lower-speed, lower-cost timing option vs faster die (vs MT41K128M16JT-107 IT:K)
- Automotive variant available on identical footprint (vs MT41K128M16JT-125 AAT:K)
설계 노트
For a single x16 DDR3L device at DDR3L-1600, route DQ/DM/DQS as length-matched groups within each byte lane (typically +/-10 mil intra-lane skew); length-match address/command/control to the clock within the fly-by tolerances defined in Micron's DDR3 design guide. Use ODT settings recommended by the controller IP (e.g., Xilinx MIG) rather than fixed values, since dynamic ODT between writes and reads materially improves margins at 1600 MT/s. Keep the ZQ 240-ohm 1% resistor on a quiet ground with a short trace to the ZQ ball.
Estimated: at DDR3L-1600 with moderate utilization, expect roughly 100-200 mA average on VDD (1.35V) per device depending on access patterns - size the 1.35V rail for at least 500 mA peak per device to cover refresh bursts and calibration. Provide bulk 100 uF plus per-ball-group 0.1 uF/0.01 uF decoupling close to the FBGA. VDDQ and VDD may share a rail per Micron DDR3L guidance; VREFCA/VREFDQ must be derived cleanly (resistor divider or dedicated reference) with local 0.1 uF decoupling at each ball.
Do not assume 1.5V DDR3 register settings: at 1.35V the device is a DDR3L part and controller configuration must select DDR3L with the -125 (CL11) CAS latency at 800 MHz. If migrating from a -107 (1866 MT/s) design, reduce controller frequency and re-tune MIG calibration, since -125 timing is slower. For second sources (Alliance, ISSI), re-run controller calibration and verify the 9x13 mm ISSI body against your board keep-out before releasing the BOM. Observe RESET_n power-up sequencing requirements to avoid illegal initialization states.
규정 준수 정보
RoHS compliant and lead-free per distributor listings (DigiKey/LCSC). AEC-Q100 qualification applies only to the AAT:K automotive variant, not this IT:K part. REACH, halogen-free, and conflict-minerals status not stated in provided data.
