MT41K128M16JT-125K-TR - DDR3L 2Gbit 800MHz DRAM | Micron
부품 번호: MT41K128M16JT-125K-TR ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $58.57 | $58.57 |
| 10 | $55.64 | $556.40 |
| 100 | $52.71 | $5,271.00 |
| 500 | $49.78 | $24,890.00 |
| 1,000 | $46.86 | $46,860.00 |
MT41K128M16JT-125K-TR 개요
DDR3L SDRAM (Low-Voltage Double Data Rate 3 Synchronous DRAM) is a category of volatile dynamic random-access memory that operates at 1.35 V, down-compatible with 1.5 V DDR3 supplies. Within the memory hierarchy, it sits under DRAM components, which in turn sit under semiconductor memory in the broader integrated circuit taxonomy. DDR3L doubles internal data rate to the I/O through an 8n-bit prefetch architecture, delivering high bandwidth for embedded processors, FPGAs, and networking SoCs.
Key features include 2 Gbit capacity per chip, 16-bit wide data bus enabling simplified point-to-point layouts, 800 MHz data rate operation at DDR3L-1600 speed grade, and low 1.35 V core supply that reduces dynamic power versus 1.5 V DDR3. The FBGA package provides excellent signal integrity and thermal characteristics for high-speed operation.
The device implements standard DDR3 SDRAM features including 8n-bit prefetch, on-die termination (ODT), DLL for read data alignment, and configurable CAS latency. Addressing, bank control, and refresh timing follow the JEDEC DDR3L convention as described in the Micron datasheet, allowing use with standard memory controllers and FPGA memory interface generators.
Typical applications include embedded industrial controllers, FPGA-based processing and image processing systems, networking line cards, and test and measurement instruments requiring 2 Gbit of volatile working memory.
When designing, follow the Micron datasheet layout guidelines: length-match address and command traces, implement ODT calibration in the memory controller, and respect the 1.35 V (with 1.5 V compatibility) supply ranges and refresh intervals.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing additional engineering value for component selection.
드롭인 대체품: MT41K128M16JT-125K-TR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MT41K128M16JT-125K-TR (동일 폼 팩터 및 풋프린트) — 차이점: Clock Frequency, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MT41K128M16JT-125:K
✅ 드롭인✓ 재고 있음
$9.75 / 개
데이터시트 보기 →MT41K128M16JT-125 V:K TR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT41K128M16JT-125 IT:K
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT41J128M16JT-125:K TR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AS4C128M16D3L-12BAN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IS43TR16128C-125KBL
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
HGD32G16M16
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT41K128M16JT-125K-TR 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3L SDRAM |
| 메모리 크기 | 2 Gbit |
| 메모리 구성 | 128M x 16 |
| 인터페이스 | Parallel |
| Clock Frequency | 800 MHz |
| Access Time | 13.75 ns |
| Core Supply Voltage | 1.35 V (1.5 V compatible) |
| Prefetch Architecture | 8n-bit |
| 패키지 | 96-FBGA (8 x 14 mm) |
| 실장 유형 | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Technology | CMOS DRAM |
| Data Rate Class | DDR3L-1600 (at 800 MHz clock) |
MT41K128M16JT-125K-TR 96-fbga (8 x 14 mm) 핀 구성 가이드
MT41K128M16JT-125K-TR(96-fbga (8 x 14 mm) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: MT41K128M16JT-125K-TR.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
MT41K128M16JT-125K-TR 적합 용도: 6 애플리케이션s: FPGA-Based Processing Systems, Industrial Embedded Controllers, Networking Line Cards and Appliances, Test and Measurement Instruments, Medical Diagnostic Equipment, Video and Display Processing.
FPGA-Based Processing Systems
The MT41K128M16JT-125K-TR pairs naturally with Xilinx Artix-7, Kintex-7, and Zynq or Intel Cyclone/Arria devices whose memory controllers (MIG/EMIF) include native DDR3L presets. Its 2 Gbit density and 128M x 16 organization match a single-rank 16-bit controller configuration, while the 800 MHz clock (DDR3L-1600) delivers up to 3.2 GB/s peak bandwidth for image line buffers, data acquisition FIFOs, and communications buffering. The 1.35 V supply reduces DRAM dynamic power versus 1.5 V DDR3, easing FPGA board thermal budgets in fanless industrial enclosures. Implement on-die termination and controller-level read leveling to meet timing across process, voltage, and temperature corners, and follow MIG layout rules for trace length matching on the 16-bit DQ bus.
추천
Industrial Embedded Controllers
Industrial controllers and PLC-class boards require reliable, long-lifecycle working memory; the MT41K128M16JT-125K-TR provides 2 Gbit of DDR3L working RAM at 1.35 V, cutting DRAM power draw compared with 1.35 V-incompatible 1.5 V DDR3 parts. Its 96-FBGA (8 x 14 mm) surface-mount package withstands vibration and thermal cycling typical of factory automation environments, and Micron's industrial roadmap supports extended procurement. For wide-temperature builds, the same die is available as MT41K128M16JT-125 IT:K industrial grade, a drop-in variant sharing the identical ball map. Design with solid 1.35 V planes, per-ball decoupling, and controller refresh settings per the Micron datasheet to maintain data integrity in electrically noisy industrial conditions.
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Networking Line Cards and Appliances
Networking equipment uses DDR3L DRAM for packet buffers, routing tables, and deep-packet-inspection working sets. The MT41K128M16JT-125K-TR's 800 MHz operation (DDR3L-1600) supplies up to 3.2 GB/s of peak bandwidth on its 16-bit bus, adequate for control-plane buffering and small system line cards, and multiple devices can be ganged for wider buses. The 1.35 V operation reduces total board power - a key metric in high-port-density chassis - while the 96-FBGA package enables dense four-corner routing. On-die termination reduces the external termination component count, simplifying stackup design. Follow the Micron datasheet signal integrity guidance and controller ZQ calibration routines to hold eye margins across temperature in always-on network equipment.
추천
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators need fast, deep capture memory. The MT41K128M16JT-125K-TR offers 2 Gbit per device at DDR3L-1600 data rates, letting instruments stream digitizer data into a 128M x 16 memory array with predictable latency under controller-managed refresh. The 1.35 V rail helps contain instrument internal power dissipation, and the 96-FBGA package supports the tight PCB real estate typical of front-end boards. Because capture traffic is bursty, design the memory controller arbitration to guarantee refresh bandwidth per the Micron datasheet timing specification, and use read leveling at bring-up to hold timing margins across the 800 MHz clock domain in production units.
추천
Medical Diagnostic Equipment
Medical imaging and patient-monitoring systems apply DDR3L DRAM for image frame buffers and real-time processing working memory, where the MT41K128M16JT-125K-TR's 2 Gbit density and 3.2 GB/s peak bandwidth handle ultrasound and digital radiography frame streams. Low 1.35 V operation reduces heat inside enclosed, fanless medical housings where acoustic noise and reliability are critical. Micron's long product lifecycle supports the multi-year qualification and regulatory revalidation cycles typical of medical device programs. The 96-FBGA package's solder-ball construction resists mechanical stress during transport and handling. Validate memory content integrity with controller ECC where the host SoC provides it, and follow datasheet refresh requirements across the full operating range.
추천
Video and Display Processing
Video pipelines - frame grabbers, video walls, and display controllers - use DDR3L DRAM as frame buffers. The MT41K128M16JT-125K-TR's 2 Gbit capacity stores multiple HD frames (a 1080p RGB frame is roughly 6 MB, so 2 Gbit holds dozens), and its 800 MHz clock provides the bandwidth to sustain write-then-read frame cycling plus display refresh simultaneously. The 1.35 V supply lowers power in always-on display products, and the 16-bit organization simplifies single-chip designs. Design the memory controller for deterministic latency between capture and display readout, honoring refresh intervals per the Micron datasheet, and use on-die termination to preserve signal integrity on the high-utilization DQ bus across temperature.
추천
추천 제품 요약
엔지니어링 참조 데이터: MT41K128M16JT-125K-TR — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MT41K128M16JT-125:K | MT41K128M16JT-125 IT:K | AS4C128M16D3L-12BAN | IS43TR16128C-125KBL | HGD32G16M16 |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | ISSI | HGCHIPS |
| Memory Size / Organization | 2 Gbit, 128M x 16 | 2 Gbit, 128M x 16 | 2 Gbit, 128M x 16 | 2 Gbit, 128M x 16 | 2 Gbit, 128M x 16 | 2 Gbit, 128M x 16 |
| Memory Class | DDR3L (1.35 V) | DDR3L (1.35 V) | DDR3L (1.35 V) | DDR3L (1.35 V) | DDR3L (1.35 V) | DDR3 (per vendor listing) |
주요 차별점
- Original-manufacturer supply assurance (vs AS4C128M16D3L-12BAN)
- Lower operating power vs DDR3 counterpart (vs MT41J128M16JT-125:K TR)
- Industrial temperature drop-in option (vs MT41K128M16JT-125 IT:K)
설계 노트
At the 800 MHz clock (DDR3L-1600) of the MT41K128M16JT-125K-TR, route the 16-bit DQ bus as length-matched byte lanes with DQS/DQS# pairs routed differentially; keep address/command lines matched to the clock within the skew budget in the Micron datasheet. Use on-die termination (ODT) settings from the controller training algorithm and enable write leveling. The 96-FBGA (8 x 14 mm) ball map requires careful escape routing - prefer HDI or at minimum 4/4 mil trace/space with via-in-pad where necessary.
Supply the MT41K128M16JT-125K-TR from a regulated 1.35 V rail (DDR3L class). Provide a solid power plane, bulk capacitance near the device, and per-rail decoupling following the Micron datasheet reference design. Because DDR3L is backward compatible with 1.5 V DDR3 operation, confirm your PMIC and controller I/O rail are fixed at 1.35 V before assembly - mixing signaling standards can stress I/O structures. Account for peak currents during simultaneous read/write bursts when sizing the VRM.
Do not interchange MT41K (DDR3L) and MT41J (DDR3) parts without checking the controller's supported VDD range; the J suffix denotes a 1.5 V device. The -125 suffix means the 13.75 ns / 800 MHz speed grade - a -107 part is faster and compatible, but a slower grade is not. When substituting cross-brand (Alliance AS4C128M16D3L-12BAN, ISSI IS43TR16128C-125KBL), re-run controller memory training in firmware and verify speed-grade and temperature-grade parity against your qualification requirements.
규정 준수 정보
Compliance status not explicitly stated in the provided verified data; Micron part catalog page should be consulted for RoHS/REACH declarations. Micron 'K' grade parts are conventionally lead-free, but this must be confirmed from official Micron compliance documents.
