MT53D384M32D2DS-046 - 12Gbit LPDDR4 SDRAM 2133MHz | Micron
부품 번호: MT53D384M32D2DS-046 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
MT53D384M32D2DS-046 개요
LPDDR4 (Low Power Double Data Rate 4) SDRAM is a JEDEC-defined class of DRAM optimized for mobile and power-sensitive embedded systems. Sitting in the hierarchy of volatile memory ICs under SDRAM, LPDDR4 lowers core voltage relative to DDR4 and introduces features such as bank grouping and low-power self-refresh states, making it the dominant DRAM family for smartphones, tablets, automotive infotainment, and edge computing platforms.
Key features of this device include its 12Gbit density in a single-die configuration, a 32-bit data bus width that simplifies memory controller interfacing, and the 200-ball WFBGA (10 x 14.5 mm) fine-pitch ball grid array footprint used widely across Micron LPDDR4 family members. The -046 speed bin delivers a 2.133 GHz clock, enabling high-bandwidth data transfer for memory-hungry processors.
Architecturally, the LPDDR4 core uses bank groups to permit interleaved accesses and achieves high effective bandwidth through double-data-rate signaling on the 1.1V VDD2 core domain with a separate VDDQ interface domain. Commands, addresses, and data are multiplexed to conserve ball count in the 200-ball package.
Typical applications include automotive infotainment and ADAS platforms (the AUT:C grade variant targets automotive qualification requirements), industrial edge-AI gateways, networking equipment, and high-resolution camera buffer memory in mobile devices.
A key design consideration: LPDDR4 requires careful attention to the controller initialization sequence, ZQ calibration, and length-matched PCB routing on the address/command and data buses; supply sequencing between VDD1, VDD2, and VDDQ domains must follow the Micron datasheet ordering.
This page synthesizes distributor pricing context, drop-in grade-variant alternatives, and practical design notes not found in a single manufacturer datasheet.
드롭인 대체품: MT53D384M32D2DS-046 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MT53D384M32D2DS-046 AUT:E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT53D384M32D2DS-046 AIT:C
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT53D384M32D2DS-046 AIT:E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT53D384M32D2DS-046 AAT:E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT53D384M32D2DS-046 WT:E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT53D384M32D2DS-046 최대 정격 & 전기적 특성
| 메모리 유형 | Mobile LPDDR4 SDRAM |
| Memory Density | 12 Gbit |
| 메모리 구성 | 384M x 32 |
| Clock Frequency | 2.133 GHz |
| 공급 전압 | 1.1 V |
| 패키지 | 200-WFBGA (10 x 14.5 mm) |
| 실장 유형 | Surface Mount (BGA) |
| Access Type | Synchronous, Double Data Rate |
| Speed Grade | -046 |
| 데이터 버스 폭 | 32 bit |
| Ball Count | 200 |
| Package Dimensions | 10 mm x 14.5 mm |
MT53D384M32D2DS-046 10 mm x 14.5 mm 핀 구성 가이드
MT53D384M32D2DS-046(10 mm x 14.5 mm 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: MT53D384M32D2DS-046.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
MT53D384M32D2DS-046 적합 용도: 6 애플리케이션s: Automotive Infotainment and Cluster, Industrial Edge-AI Gateways, Mobile and Tablet Main Memory, Networking and Communication Equipment, High-Resolution Camera Buffering, Embedded Compute Modules (SOM/COM).
Automotive Infotainment and Cluster
The AUT:C and AAT:E grade variants of the MT53D384M32D2DS-046 target automotive infotainment, digital cockpit, and instrument cluster platforms where automotive temperature grades are mandatory. The 12Gbit density provides sufficient working memory for HD graphics composition and navigation databases, while the 384M x 32 organization with 2.133 GHz clock feeds the bandwidth-hungry memory controllers of automotive SoCs. The LPDDR4 architecture keeps standby power low through self-refresh during ignition-off states, preserving battery life in vehicles. Implemented as a point-to-point 32-bit channel, the 200-ball WFBGA (10 x 14.5 mm) package supports compact stack-up designs typical of automotive head units.
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Industrial Edge-AI Gateways
The AIT:C industrial-grade MT53D384M32D2DS-046 suits edge-AI gateways and industrial PCs that run vision inference or predictive-maintenance workloads. Its 12Gbit capacity accommodates neural-network activation buffers and frame queues, and the 2.133 GHz data rate delivers the sustained bandwidth that AI accelerators require. Compared with DDR4 DIMM solutions, LPDDR4 reduces idle power and total board area via the 32-bit 200-WFBGA (10 x 14.5 mm) footprint. Designers should validate the controller training sequence across the industrial temperature range and reserve the full 1.1V-domain decoupling network recommended in the Micron LPDDR4 design guide.
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Mobile and Tablet Main Memory
The MT53D384M32D2DS-046 was designed primarily as main system memory for smartphones, tablets, and portable media devices. The 384M x 32 organization maps directly to the 32-bit LPDDR4 channels of mobile application processors, and the 12Gbit density supports flagship-class multitasking. LPDDR4's lower VDD domains and deep power-down states extend battery runtime in standby, a decisive advantage over standard DDR4. The 200-ball WFBGA (10 x 14.5 mm) package supports PoP-style compact boards. For consumer/mobile builds, the WT:E commercial-grade variant is typically selected to optimize cost and availability.
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Networking and Communication Equipment
Routers, switches, and 5G small-cell platforms use the MT53D384M32D2DS-046 as packet buffer and control-plane memory. The 32-bit bus at 2.133 GHz provides the deterministic bandwidth needed for line-rate forwarding engines, while the 12Gbit capacity holds flow tables and queue descriptors. The AIT:C industrial grade covers extended ambient conditions typical of telecom cabinets. During layout, byte-lane length matching and reference-plane integrity on the 1.1V domain are critical at this data rate. The 200-WFBGA (10 x 14.5 mm) footprint simplifies four- or eight-device, wide-bus memory subsystems on compact line cards.
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High-Resolution Camera Buffering
Machine-vision cameras, security systems, and automotive surround-view modules use the MT53D384M32D2DS-046 to buffer high-resolution sensor streams before ISP processing or compression. A 4K sensor at 30 fps generates sustained multi-Gbps streams that the 2.133 GHz LPDDR4 interface can absorb with the 384M x 32 organization providing 1.5 GB of frame storage. The AUT:C grade supports camera modules exposed to automotive ambient profiles. Frame write and read bursts benefit from LPDDR4 bank-group interleaving, reducing latency spikes that would otherwise drop frames in burst-heavy vision pipelines.
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Embedded Compute Modules (SOM/COM)
System-on-module vendors embed the MT53D384M32D2DS-046 to provide 1.5 GB of soldered DRAM on compact compute modules for robotics, medical devices, and IoT gateways. LPDDR4-on-package memory avoids the height and reliability concerns of socketed DIMMs and the 200-WFBGA (10 x 14.5 mm) package fits standard module stack heights. The 32-bit organization pairs cleanly with single-channel SoC memory controllers, and 2.133 GHz operation sustains Linux/RTOS workloads. Designers using the AIT:C grade gain industrial temperature coverage without changing the footprint or controller firmware relative to commercial builds.
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추천 제품 요약
엔지니어링 참조 데이터: MT53D384M32D2DS-046 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MT53D384M32D2DS-046 AUT:E | MT53D384M32D2DS-046 AIT:C | MT53D384M32D2DS-046 WT:E |
|---|---|---|---|---|
| Package | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 12 Gbit | 12 Gbit | 12 Gbit | 12 Gbit |
| Organization | 384M x 32 | 384M x 32 | 384M x 32 | 384M x 32 |
| Clock Frequency | 2.133 GHz | 2.133 GHz | 2.133 GHz | 2.133 GHz |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Temperature Grade | Automotive (AUT prefix) | Automotive | Industrial | Commercial/Standard |
| Die/Quality Revision | C | E | C | E |
주요 차별점
- Automotive temperature grade availability (vs MT53D384M32D2DS-046 WT:E)
- 12Gbit density in single 32-bit device (vs MT53D384M32D2DS-046 AIT:C)
- Cost-optimized consumer option (vs MT53D384M32D2DS-046 AAT:E)
설계 노트
At the -046 speed bin (2.133 GHz clock), the 32-bit data bus must be routed as byte lanes with intra-lane length matching per the Micron LPDDR4 design guide. Keep trace skew within controller training window margins, maintain controlled impedance on CA and DQ nets, and reference signals to a continuous ground plane on the 1.1V domain. Avoid routing memory signals across plane splits near the 200-WFBGA escape region, and simulate the eye diagram at the package ball before finalizing the stack-up.
The MT53D384M32D2DS-046 operates from a 1.1V supply domain. Provide dedicated decoupling per the Micron datasheet power-delivery section: bulk capacitance at the VRM plus local high-frequency ceramics placed inside the BGA ball field. LPDDR4 peak current during read/write training bursts is significantly higher than average - size the regulator for transient response, not just average current, and verify the power-down and self-refresh current budget for battery-operated designs.
Do not substitute grade suffixes without controller revalidation: the AUT:C, AIT:C, and WT:E variants share silicon and pinout but differ in temperature grade, and E-revision parts may differ in initialization details from C-revision parts. Always run full read/write training and margin tests on the actual mounted revision. Also confirm the die/quality revision letter with your SoC vendor's memory compatibility list, as some controllers whitelist specific revisions only.
규정 준수 정보
Compliance details were not included in the verified web data for this MPN. Automotive-grade variants (AUT/AAT prefixes) are marketed for automotive applications; consult the Micron product page and datasheet for RoHS, REACH, and AEC qualification statements.
