메모리 가격은 매일 변동되므로 — 사이트 내 가격은 시장 상황보다 뒤처질 수 있습니다. 최신 견적을 받으시려면 RFQ를 제출해 주세요.
최신 가격 요청 →
Micron Technology

MT62F512M64D2CZ-023FAUT:E - 32Gbit LPDDR5X SDRAM | Micron

부품 번호: MT62F512M64D2CZ-023FAUT:E ✓ 활성
재고 있음 영업일 기준 1~3일 내 발송
1.8 V (per Newark listing title) Vdss 561-TFBGA (8 x 12.4 mm) Package -023 Speed Mobile LPDDR5X SDRAM Memory
시작가 $1 USD / 개
MOQ: 1 |
가격 업데이트: 2026-09-01
볼륨 가격
수량 단가 합계
1 $1 $1.00
ℹ️ 모든 가격은 USD 기준입니다

MT62F512M64D2CZ-023FAUT:E 개요

The Micron Technology MT62F512M64D2CZ-023FAUT:E is a 32 Gbit mobile LPDDR5X SDRAM memory IC with a 64-bit data organization, LVSTL I/O interface, and a maximum data rate of 4.266 GHz (4266 Mbps/pin), housed in a 561-ball TFBGA package measuring 8 x 12.4 mm.

LPDDR5X (Low Power Double Data Rate 5X) is an extension of the LPDDR5 DRAM standard defined by JEDEC, engineered for mobile, automotive, and edge-AI systems that require both high bandwidth and minimal power draw. As the highest-performance member of the low-power DRAM family, LPDDR5X raises the I/O speed ceiling beyond LPDDR5 while retaining the same command architecture and ballout, making it the dominant main-memory choice for flagship smartphones, ADAS domain controllers, and AI accelerators.

Key features of this device include 32 Gbit (4 GB) of DRAM density in a single package, a 64-bit wide bus that yields roughly 34 GB/s of aggregate bandwidth at full speed, and the low-voltage LVSTL 0.5 I/O signaling class that reduces switching power versus LPDDR4X. The -023 speed grade designates operation at the 4.266 GHz data-rate class, and the :E suffix denotes Micron lead-free, RoHS-compliant termination. Automotive designation (AUT, per Newark listed as AEC-Q100 DRAM, Mobile LPDDR5X) targets harsh-environment designs requiring qualified supply continuity.

Architecturally, the device inherits the LPDDR5X deep-power-down, per-bank refresh, and dynamic voltage-frequency scaling features, letting system controllers trade performance for power on the fly. The 561-ball TFBGA with 0.5 mm-class ball pitch supports standard mobile PCB stacking and PoP-adjacent layouts near an application processor.

Typical applications include automotive ADAS/autonomous-driving compute platforms, flagship smartphone and tablet main memory, AI edge inference modules, and high-performance embedded vision systems. In each case the combination of 32 Gbit density, 64-bit width, and 4266 Mbps/pin data rate delivers the memory bandwidth that modern SoCs demand.

Design consideration: LPDDR5X signal integrity requires careful length-matched routing and power integrity; consult the Micron datasheet for VDD/VDDQ termination and fly-by topology requirements before layout.

This page synthesizes distributor availability data, same-package drop-in variants, and practical design notes beyond what the manufacturer datasheet alone provides. Pricing references are as of 2026-09-02.

드롭인 대체품: MT62F512M64D2CZ-023FAUT:E — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.

빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:

MT62F512M64D2CZ-023FAAT:E

✅ 드롭인
📦 561-TFBGA (8x12.4)
same LPDDR5X 32Gbit automotive part; FAAT industrial-plus/auto temp grade vs FAUT - identical electricals and ballout

📋 참조 대체품 (카탈로그에 없음)

MT62F512M64D2CZ-023 AAT:E

✅ 드롭인
📦 561-TFBGA (8x12.4)
LPDDR5 (not 5X) speed bin - lower max data rate at same 32Gbit/x64 organization and 561-ball footprint

📋 참조 대체품 (카탈로그에 없음)

MT62F512M64D2CZ-023 AIT:E

✅ 드롭인
📦 561-TFBGA (8x12.4)
LPDDR5 industrial temperature grade (IT) vs automotive UT - same footprint, reduced temp qualification and speed class

📋 참조 대체품 (카탈로그에 없음)

MT62F512M64D2CZ-023 AUT:E

✅ 드롭인
📦 561-TFBGA (8x12.4)
LPDDR5 automotive UT grade vs LPDDR5X - same 32Gbit/x64/561-ball, lower data-rate ceiling

📋 참조 대체품 (카탈로그에 없음)

MT62F512M64D2CZ-023 FAAT:E

✅ 드롭인
📦 561-TFBGA (8x12.4)
automotive AEC-Q100 LPDDR5X per Newark listing; FAAT temp suffix vs FAUT - pin-compatible, 4.266 GHz class

📋 참조 대체품 (카탈로그에 없음)

MT62F512M64D2CZ-023FAUT:E 최대 정격 & 전기적 특성

메모리 유형 Mobile LPDDR5X SDRAM
메모리 크기 32 Gbit (4 GB)
메모리 구성 64 (x64 bus width)
인터페이스 LVSTL 0.5
Maximum Data Rate 4.266 GHz (4266 Mbps/pin)
Speed Grade -023
패키지 561-TFBGA (8 x 12.4 mm)
공급 전압 1.8 V (per Newark listing title)
Automotive Qualification AEC-Q100 (per Newark listing)
Temperature Grade Suffix AUT (automotive utility temperature)
실장 유형 Surface Mount (BGA)
Lead-Free Yes (:E suffix)
RoHS 상태 Compliant
Reel Packaging Option Available (TR suffix variant)
Application Segment Mobile / Automotive DRAM

MT62F512M64D2CZ-023FAUT:E 561-tfbga (8 x 12.4 mm) 핀 구성 가이드

MT62F512M64D2CZ-023FAUT:E(561-tfbga (8 x 12.4 mm) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.

MT62F512M64D2CZ-023FAUT:E의 561-tfbga (8 x 12.4 mm) 패키지 핀아웃 다이어그램

다음에 대한 상세 핀아웃 데이터 없음: MT62F512M64D2CZ-023FAUT:E.

다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.

일반적인 애플리케이션

MT62F512M64D2CZ-023FAUT:E 적합 용도: 6 애플리케이션s: Automotive ADAS Domain Controller, Flagship Smartphone Main Memory, Edge AI Inference Module, Automotive Infotainment and Digital Cockpit, Tablet and Notebook-Class Mobile Computing, Networking and 5G Infrastructure Line Cards.

🚗

Automotive ADAS Domain Controller

The MT62F512M64D2CZ-023FAUT:E fits ADAS domain controllers because it combines AEC-Q100 automotive qualification (per Newark listing) with 32 Gbit density and a 64-bit LVSTL 0.5 bus running at 4.266 GHz, providing roughly 34 GB/s of bandwidth for sensor-fusion SoCs processing camera, radar, and lidar streams. In this role the DRAM serves as the main working memory beside the ADAS application processor, buffering multi-frame sensor data and neural-network feature maps. The automotive UT temperature suffix and Micron long-term automotive supply commitment support 15-year vehicle programs. Designers should follow the Micron LPDDR5X datasheet routing rules - length-matched fly-by traces and on-die-termination settings - to hold eye margins at 4266 Mbps/pin across the automotive temperature range. Compared with LPDDR5 (non-X) variants in the same 561-ball footprint, LPDDR5X delivers higher bandwidth per watt, which directly reduces thermal load in sealed, fanless ADAS enclosures.

📱

Flagship Smartphone Main Memory

Smartphone SoCs are the primary target market for LPDDR5X, and the MT62F512M64D2CZ-023FAUT:E provides 4 GB of stacked-capable main memory with 4266 Mbps/pin data rate over a 64-bit LVSTL interface. The 8 x 12.4 mm, 561-ball TFBGA footprint matches standard mobile memory land patterns, enabling placement near the application processor for short, length-matched bus routing. LPDDR5X deep-power-down and dynamic voltage-frequency scaling let the OS shed power during idle and background states - critical for battery life - while full bandwidth is available for gaming, computational photography, and on-device AI inference. The :E suffix confirms lead-free, RoHS-compliant construction suitable for consumer handset manufacturing. Board designers should budget power-integrity decoupling on VDDQ and follow Micron LPDDR5X layout guidelines to maintain signal integrity at the 4.266 GHz class data rate in dense multi-layer handset PCBs.

🧩

Edge AI Inference Module

Edge AI accelerators demand high memory bandwidth for neural-network weight and activation streaming, and the MT62F512M64D2CZ-023FAUT:E addresses this with a 64-bit bus at up to 4.266 GHz - approximately 34 GB/s of sustained read/write bandwidth. The 32 Gbit (4 GB) density holds mid-sized CNN and transformer models entirely on-chip-adjacent, avoiding off-module DDR traffic that would bottleneck frame rates. Because the device uses LVSTL 0.5 signaling, I/O power per transferred bit is substantially lower than LPDDR4X equivalents, extending thermal budgets in fanless edge boxes and camera-to-AI modules. The automotive AEC-Q100 designation (per Newark listing) additionally opens deployment in roadside sensors and industrial machine-vision cells where vibration and temperature stress exceed consumer limits. Integrators should pair the DRAM with an SoC that implements LPDDR5X PHY training and use the Micron datasheet AC tables for the -023 speed grade when validating timing margins.

📺

Automotive Infotainment and Digital Cockpit

Digital cockpit SoCs driving multiple high-resolution displays and 3D graphics require large, fast DRAM, and the MT62F512M64D2CZ-023FAUT:E supplies 32 Gbit with dual-channel-capable 64-bit organization at 4.266 GHz. Its AEC-Q100 automotive qualification (per Newark listing) and AUT temperature grade satisfy cockpit program quality gates, while the shared 561-TFBGA footprint with Micron LPDDR5 variants (MT62F512M64D2CZ-023 AAT:E / AUT:E) lets one PCB platform serve both infotainment and ADAS product lines with only a BOM change. Graphics workloads benefit from the high random-access bandwidth of LPDDR5X bank architecture, sustaining smooth multi-display rendering and voice-assistant responsiveness. Design teams should implement per Micron guidelines the VDDQ voltage scaling settings used during low-activity periods to cut cockpit standby power, and validate with the -023 speed-grade AC parameters across the full automotive temperature range before production signoff.

🖥️

Tablet and Notebook-Class Mobile Computing

Premium tablets and thin-and-light notebooks built around ARM-based SoCs use LPDDR5X as main system memory, and the MT62F512M64D2CZ-023FAUT:E delivers 4 GB per device that can be combined in multiple packages for 8 GB or 16 GB system configurations. The 64-bit per-device bus and 4266 Mbps/pin rate give SoC memory controllers the aggregate bandwidth needed for desktop-class application multitasking in a fanless envelope. LVSTL 0.5 low-voltage signaling plus LPDDR5X self-refresh and per-bank refresh reduce standby drain, directly extending battery runtime between charges. The 8 x 12.4 mm 561-ball TFBGA fits the narrow board real estate of tablet motherboards alongside UFS/NAND storage stacks. Thermal and signal-integrity design should follow the Micron LPDDR5X datasheet stackup recommendations; because multiple DRAM devices share the memory bus, fly-by topology calibration and per-device ZQ calibration are essential to maintain timing margin at the -023 speed grade.

🌐

Networking and 5G Infrastructure Line Cards

5G small-cell radios, edge gateways, and network processing line cards increasingly adopt LPDDR5X for packet-buffering and control-plane memory, and the MT62F512M64D2CZ-023FAUT:E fits this role with 32 Gbit of density and approximately 34 GB/s of bandwidth from its 64-bit LVSTL 0.5 interface at 4.266 GHz. Compared with DDR4 SDRAM alternatives such as the MT40A512M16LY-062E, LPDDR5X offers higher per-pin bandwidth at lower I/O voltage, reducing power per transferred bit in always-on infrastructure hardware where efficiency targets are contractual. The AEC-Q100 qualified variant extends reliability margins into outdoor telecom enclosures subject to temperature cycling. Designers should verify that their network SoC memory controller supports LPDDR5X PHY training and configure refresh rates per the Micron -023 datasheet AC tables; layout must preserve length matching and reference-plane continuity across the 561-ball footprint to hold 4266 Mbps/pin eye diagrams on production boards.

이 제품에 대한 FAQ가 없습니다.

엔지니어링 참조 데이터: MT62F512M64D2CZ-023FAUT:E — 비교, 설계 지침 및 규정 준수 정보.

선택 가이드

Choose the MT62F512M64D2CZ-023FAUT:E when your SoC implements an LPDDR5X PHY and you need maximum bandwidth per watt in an automotive or high-reliability mobile design: it provides 32 Gbit, a 64-bit LVSTL 0.5 bus, and the 4.266 GHz class data rate in a 561-TFBGA (8 x 12.4 mm) footprint. Select MT62F512M64D2CZ-023FAAT:E if your product line uses the FAAT automotive temperature profile; select MT62F512M64D2CZ-023 AAT:E, AIT:E, or AUT:E when the design targets LPDDR5 (not 5X) controllers or industrial temperature qualification - all share the same PCB footprint, enabling single-board, multi-grade platforms. Trade-offs: LPDDR5X variants demand tighter signal-integrity and power-integrity design at the -023 grade, and require a controller with LPDDR5X training support; if your SoC tops out at LPDDR5, the lower-cost LPDDR5 variants are the honest choice. For non-automotive consumer builds, verify which temperature suffix your program actually requires before paying the automotive premium.

대체품과의 비교

파라미터 이 제품 MT62F512M64D2CZ-023FAAT:E MT62F512M64D2CZ-023 AAT:E MT62F512M64D2CZ-023 AIT:E MT62F512M64D2CZ-023 FAAT:E
Package 561-TFBGA (8 x 12.4 mm) 561-TFBGA - same 561-TFBGA - same 561-TFBGA - same 561-TFBGA - same
Brand Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Memory Size 32 Gbit 32 Gbit 32 Gbit 32 Gbit 32 Gbit
Interface Standard LPDDR5X LPDDR5X LPDDR5 LPDDR5 LPDDR5X
I/O Interface LVSTL 0.5 LVSTL 0.5 LVSTL LVSTL LVSTL 0.5
Temperature Suffix AUT (automotive utility temp) FAAT AAT AIT FAAT

주요 차별점

  • LPDDR5X 4.266 GHz data rate vs LPDDR5 siblings (vs MT62F512M64D2CZ-023 AAT:E)
  • Automotive AEC-Q100 qualification (vs MT62F512M64D2CZ-023 AIT:E)
  • 32 Gbit density in a single 561-ball package (vs MT53E512M32D1ZW-046BAUT:B)

설계 노트

At the -023 speed grade (4.266 GHz data rate, 4266 Mbps/pin), LPDDR5X routing demands strict length matching within the datasheet skew budget across all 64 DQ lines, DQS strobes, and the CA bus. Use fly-by or balanced-tree clock topology per the Micron LPDDR5X datasheet, maintain controlled impedance (single-ended ~40 ohms for DQ as a common starting estimate), and place the DRAM within the shortest practical distance of the SoC PHY. Simulate eye diagrams with IBIS models from the Micron product page before committing the PCB stackup.

LPDDR5X uses LVSTL 0.5 signaling on a low-voltage VDDQ rail; estimate peak I/O switching current from the datasheet ICC tables at the -023 grade and budget bulk plus high-frequency decoupling (ceramic caps of multiple values) at each VDD/VDDQ ball group. The device also supports dynamic voltage-frequency scaling - implement per the datasheet DVFS sequences so VDDQ changes occur only during allowed operating points to avoid PHY retraining faults or data corruption.

Do not interchange LPDDR5X and LPDDR5 speed grades without confirming SoC PHY support: variants such as MT62F512M64D2CZ-023 AAT:E share the same 561-ball footprint but run LPDDR5 timing tables. Also, the :E suffix and TR (tape-and-reel) suffix denote termination and packaging options, not electrical differences - verify the exact MPN on purchase orders. Confirm AEC-Q100 requirements against the Newark/manufacturer listing before automotive release.

규정 준수 정보

RoHS
Compliant
REACH
Unknown
AEC-Q100
Qualified
무연
Yes
무할로겐
Unknown
분쟁 광물
Unknown

RoHS compliance and lead-free status inferred from :E suffix and DigiKey mobile LPDDR5X listing. AEC-Q100 qualification per Newark listing title. REACH, halogen-free, and conflict-minerals status not stated in provided data.

데이터 검증일: 2026-09-02 — XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터

관련 검색

MT62F512M64D2CZ-023FAUT:E MT62F512M64D2CZ-023FAUT:E datasheet Micron LPDDR5X 32Gbit 561-TFBGA LPDDR5X 4266 Mbps automotive DRAM 561-TFBGA 8x12.4 LPDDR5X memory MT62F512M64D2CZ-023FAUT:E vs MT62F512M64D2CZ-023 AAT:E LPDDR5X drop-in replacement MT62F512M64D2CZ MT62F512M64D2CZ-023FAUT:E price buy AEC-Q100 LPDDR5X ADAS memory what is LVSTL 0.5 interface LPDDR5X MT62F512M64D2CZ pinout 561 ball Micron LPDDR5X smartphone main memory 4GB

관련 부품 & 용어

Micron Technology MT62F512M64D2CZ-023FAUT:E MT62F512M64D2CZ-023FAAT:E MT62F512M64D2CZ-023 AAT:E MT62F512M64D2CZ-023 AIT:E LPDDR5X LPDDR5 SDRAM DRAM LVSTL 0.5 561-TFBGA BGA AEC-Q100 RoHS JEDEC low-power memory standard mobile DRAM automotive ADAS smartphone main memory edge AI inference data rate 4266 Mbps/pin 32 Gbit memory density 64-bit memory organization
빠른 견적 RFQ
상세 정보를 모두 입력하십시오 — 영업팀이 24시간 이내에 답변드립니다
부품 번호 제조사 패키지 QTY 목표 가격 합계
합계: $0.00 USD
✓
견적이 제출되었습니다!

24시간 이내에 이메일로 답변드리겠습니다

1
RFQ 제출됨
2
견적 접수됨
3
주문 완료
4
결제
5
배송됨
6
배송 완료
RFQ 상세 보기