Micron Technology

MT62F512M64D2CZ-023FAUT:E - 32Gbit LPDDR5X SDRAM | Micron

MPN: MT62F512M64D2CZ-023FAUT:E βœ“ Active
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1.8 V (per Newark listing title) Vdss 561-TFBGA (8 x 12.4 mm) Package -023 Speed Mobile LPDDR5X SDRAM Memory
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Price updated: 2026-09-01
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Drop-in alternatives for MT62F512M64D2CZ-023FAUT:E β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

MT62F512M64D2CZ-023FAAT:E

βœ… Drop-In
πŸ“¦ 561-TFBGA (8x12.4)
same LPDDR5X 32Gbit automotive part; FAAT industrial-plus/auto temp grade vs FAUT - identical electricals and ballout

πŸ“‹ Reference alternative (not in catalog)

MT62F512M64D2CZ-023 AAT:E

βœ… Drop-In
πŸ“¦ 561-TFBGA (8x12.4)
LPDDR5 (not 5X) speed bin - lower max data rate at same 32Gbit/x64 organization and 561-ball footprint

πŸ“‹ Reference alternative (not in catalog)

MT62F512M64D2CZ-023 AIT:E

βœ… Drop-In
πŸ“¦ 561-TFBGA (8x12.4)
LPDDR5 industrial temperature grade (IT) vs automotive UT - same footprint, reduced temp qualification and speed class

πŸ“‹ Reference alternative (not in catalog)

MT62F512M64D2CZ-023 AUT:E

βœ… Drop-In
πŸ“¦ 561-TFBGA (8x12.4)
LPDDR5 automotive UT grade vs LPDDR5X - same 32Gbit/x64/561-ball, lower data-rate ceiling

πŸ“‹ Reference alternative (not in catalog)

MT62F512M64D2CZ-023 FAAT:E

βœ… Drop-In
πŸ“¦ 561-TFBGA (8x12.4)
automotive AEC-Q100 LPDDR5X per Newark listing; FAAT temp suffix vs FAUT - pin-compatible, 4.266 GHz class

πŸ“‹ Reference alternative (not in catalog)

MT62F512M64D2CZ-023FAUT:E Maximum Ratings & Electrical Characteristics

Memory Type Mobile LPDDR5X SDRAM
Memory Size 32 Gbit (4 GB)
Organization 64 (x64 bus width)
Interface LVSTL 0.5
Maximum Data Rate 4.266 GHz (4266 Mbps/pin)
Speed Grade -023
Package 561-TFBGA (8 x 12.4 mm)
Supply Voltage 1.8 V (per Newark listing title)
Automotive Qualification AEC-Q100 (per Newark listing)
Temperature Grade Suffix AUT (automotive utility temperature)
Mounting Type Surface Mount (BGA)
Lead-Free Yes (:E suffix)
RoHS Status Compliant
Reel Packaging Option Available (TR suffix variant)
Application Segment Mobile / Automotive DRAM

MT62F512M64D2CZ-023FAUT:E 561-tfbga (8 x 12.4 mm) Pin Configuration Guide

Complete pinout information for MT62F512M64D2CZ-023FAUT:E (561-tfbga (8 x 12.4 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

561-tfbga (8 x 12.4 mm) package pinout diagram for MT62F512M64D2CZ-023FAUT:E

No detailed pinout data available for MT62F512M64D2CZ-023FAUT:E.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for MT62F512M64D2CZ-023FAUT:E Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

MT62F512M64D2CZ-023FAUT:E is suitable for 6 applications: Automotive ADAS Domain Controller, Flagship Smartphone Main Memory, Edge AI Inference Module, Automotive Infotainment and Digital Cockpit, Tablet and Notebook-Class Mobile Computing, Networking and 5G Infrastructure Line Cards.

πŸš—

Automotive ADAS Domain Controller

The MT62F512M64D2CZ-023FAUT:E fits ADAS domain controllers because it combines AEC-Q100 automotive qualification (per Newark listing) with 32 Gbit density and a 64-bit LVSTL 0.5 bus running at 4.266 GHz, providing roughly 34 GB/s of bandwidth for sensor-fusion SoCs processing camera, radar, and lidar streams. In this role the DRAM serves as the main working memory beside the ADAS application processor, buffering multi-frame sensor data and neural-network feature maps. The automotive UT temperature suffix and Micron long-term automotive supply commitment support 15-year vehicle programs. Designers should follow the Micron LPDDR5X datasheet routing rules - length-matched fly-by traces and on-die-termination settings - to hold eye margins at 4266 Mbps/pin across the automotive temperature range. Compared with LPDDR5 (non-X) variants in the same 561-ball footprint, LPDDR5X delivers higher bandwidth per watt, which directly reduces thermal load in sealed, fanless ADAS enclosures.

πŸ“±

Flagship Smartphone Main Memory

Smartphone SoCs are the primary target market for LPDDR5X, and the MT62F512M64D2CZ-023FAUT:E provides 4 GB of stacked-capable main memory with 4266 Mbps/pin data rate over a 64-bit LVSTL interface. The 8 x 12.4 mm, 561-ball TFBGA footprint matches standard mobile memory land patterns, enabling placement near the application processor for short, length-matched bus routing. LPDDR5X deep-power-down and dynamic voltage-frequency scaling let the OS shed power during idle and background states - critical for battery life - while full bandwidth is available for gaming, computational photography, and on-device AI inference. The :E suffix confirms lead-free, RoHS-compliant construction suitable for consumer handset manufacturing. Board designers should budget power-integrity decoupling on VDDQ and follow Micron LPDDR5X layout guidelines to maintain signal integrity at the 4.266 GHz class data rate in dense multi-layer handset PCBs.

🧩

Edge AI Inference Module

Edge AI accelerators demand high memory bandwidth for neural-network weight and activation streaming, and the MT62F512M64D2CZ-023FAUT:E addresses this with a 64-bit bus at up to 4.266 GHz - approximately 34 GB/s of sustained read/write bandwidth. The 32 Gbit (4 GB) density holds mid-sized CNN and transformer models entirely on-chip-adjacent, avoiding off-module DDR traffic that would bottleneck frame rates. Because the device uses LVSTL 0.5 signaling, I/O power per transferred bit is substantially lower than LPDDR4X equivalents, extending thermal budgets in fanless edge boxes and camera-to-AI modules. The automotive AEC-Q100 designation (per Newark listing) additionally opens deployment in roadside sensors and industrial machine-vision cells where vibration and temperature stress exceed consumer limits. Integrators should pair the DRAM with an SoC that implements LPDDR5X PHY training and use the Micron datasheet AC tables for the -023 speed grade when validating timing margins.

πŸ“Ί

Automotive Infotainment and Digital Cockpit

Digital cockpit SoCs driving multiple high-resolution displays and 3D graphics require large, fast DRAM, and the MT62F512M64D2CZ-023FAUT:E supplies 32 Gbit with dual-channel-capable 64-bit organization at 4.266 GHz. Its AEC-Q100 automotive qualification (per Newark listing) and AUT temperature grade satisfy cockpit program quality gates, while the shared 561-TFBGA footprint with Micron LPDDR5 variants (MT62F512M64D2CZ-023 AAT:E / AUT:E) lets one PCB platform serve both infotainment and ADAS product lines with only a BOM change. Graphics workloads benefit from the high random-access bandwidth of LPDDR5X bank architecture, sustaining smooth multi-display rendering and voice-assistant responsiveness. Design teams should implement per Micron guidelines the VDDQ voltage scaling settings used during low-activity periods to cut cockpit standby power, and validate with the -023 speed-grade AC parameters across the full automotive temperature range before production signoff.

πŸ–₯️

Tablet and Notebook-Class Mobile Computing

Premium tablets and thin-and-light notebooks built around ARM-based SoCs use LPDDR5X as main system memory, and the MT62F512M64D2CZ-023FAUT:E delivers 4 GB per device that can be combined in multiple packages for 8 GB or 16 GB system configurations. The 64-bit per-device bus and 4266 Mbps/pin rate give SoC memory controllers the aggregate bandwidth needed for desktop-class application multitasking in a fanless envelope. LVSTL 0.5 low-voltage signaling plus LPDDR5X self-refresh and per-bank refresh reduce standby drain, directly extending battery runtime between charges. The 8 x 12.4 mm 561-ball TFBGA fits the narrow board real estate of tablet motherboards alongside UFS/NAND storage stacks. Thermal and signal-integrity design should follow the Micron LPDDR5X datasheet stackup recommendations; because multiple DRAM devices share the memory bus, fly-by topology calibration and per-device ZQ calibration are essential to maintain timing margin at the -023 speed grade.

🌐

Networking and 5G Infrastructure Line Cards

5G small-cell radios, edge gateways, and network processing line cards increasingly adopt LPDDR5X for packet-buffering and control-plane memory, and the MT62F512M64D2CZ-023FAUT:E fits this role with 32 Gbit of density and approximately 34 GB/s of bandwidth from its 64-bit LVSTL 0.5 interface at 4.266 GHz. Compared with DDR4 SDRAM alternatives such as the MT40A512M16LY-062E, LPDDR5X offers higher per-pin bandwidth at lower I/O voltage, reducing power per transferred bit in always-on infrastructure hardware where efficiency targets are contractual. The AEC-Q100 qualified variant extends reliability margins into outdoor telecom enclosures subject to temperature cycling. Designers should verify that their network SoC memory controller supports LPDDR5X PHY training and configure refresh rates per the Micron -023 datasheet AC tables; layout must preserve length matching and reference-plane continuity across the 561-ball footprint to hold 4266 Mbps/pin eye diagrams on production boards.

No FAQ available for this product.

Engineering reference data for MT62F512M64D2CZ-023FAUT:E β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the MT62F512M64D2CZ-023FAUT:E when your SoC implements an LPDDR5X PHY and you need maximum bandwidth per watt in an automotive or high-reliability mobile design: it provides 32 Gbit, a 64-bit LVSTL 0.5 bus, and the 4.266 GHz class data rate in a 561-TFBGA (8 x 12.4 mm) footprint. Select MT62F512M64D2CZ-023FAAT:E if your product line uses the FAAT automotive temperature profile; select MT62F512M64D2CZ-023 AAT:E, AIT:E, or AUT:E when the design targets LPDDR5 (not 5X) controllers or industrial temperature qualification - all share the same PCB footprint, enabling single-board, multi-grade platforms. Trade-offs: LPDDR5X variants demand tighter signal-integrity and power-integrity design at the -023 grade, and require a controller with LPDDR5X training support; if your SoC tops out at LPDDR5, the lower-cost LPDDR5 variants are the honest choice. For non-automotive consumer builds, verify which temperature suffix your program actually requires before paying the automotive premium.

Comparison with Alternatives

Parameter This Product MT62F512M64D2CZ-023FAAT:E MT62F512M64D2CZ-023 AAT:E MT62F512M64D2CZ-023 AIT:E MT62F512M64D2CZ-023 FAAT:E
Package 561-TFBGA (8 x 12.4 mm) 561-TFBGA - same 561-TFBGA - same 561-TFBGA - same 561-TFBGA - same
Brand Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Memory Size 32 Gbit 32 Gbit 32 Gbit 32 Gbit 32 Gbit
Interface Standard LPDDR5X LPDDR5X LPDDR5 LPDDR5 LPDDR5X
Max Data Rate 4.266 GHz 4.266 GHz [DATA_NEEDED] [DATA_NEEDED] 4.266 GHz
I/O Interface LVSTL 0.5 LVSTL 0.5 LVSTL LVSTL LVSTL 0.5
Automotive Qualification AEC-Q100 (per Newark) AEC-Q100 (per Newark) [DATA_NEEDED] Industrial temp grade AEC-Q100 (per Newark)
Temperature Suffix AUT (automotive utility temp) FAAT AAT AIT FAAT

Key Differentiators

  • LPDDR5X 4.266 GHz data rate vs LPDDR5 siblings (vs MT62F512M64D2CZ-023 AAT:E)
  • Automotive AEC-Q100 qualification (vs MT62F512M64D2CZ-023 AIT:E)
  • 32 Gbit density in a single 561-ball package (vs MT53E512M32D1ZW-046BAUT:B)

Design Notes

At the -023 speed grade (4.266 GHz data rate, 4266 Mbps/pin), LPDDR5X routing demands strict length matching within the datasheet skew budget across all 64 DQ lines, DQS strobes, and the CA bus. Use fly-by or balanced-tree clock topology per the Micron LPDDR5X datasheet, maintain controlled impedance (single-ended ~40 ohms for DQ as a common starting estimate), and place the DRAM within the shortest practical distance of the SoC PHY. Simulate eye diagrams with IBIS models from the Micron product page before committing the PCB stackup.

LPDDR5X uses LVSTL 0.5 signaling on a low-voltage VDDQ rail; estimate peak I/O switching current from the datasheet ICC tables at the -023 grade and budget bulk plus high-frequency decoupling (ceramic caps of multiple values) at each VDD/VDDQ ball group. The device also supports dynamic voltage-frequency scaling - implement per the datasheet DVFS sequences so VDDQ changes occur only during allowed operating points to avoid PHY retraining faults or data corruption.

Do not interchange LPDDR5X and LPDDR5 speed grades without confirming SoC PHY support: variants such as MT62F512M64D2CZ-023 AAT:E share the same 561-ball footprint but run LPDDR5 timing tables. Also, the :E suffix and TR (tape-and-reel) suffix denote termination and packaging options, not electrical differences - verify the exact MPN on purchase orders. Confirm AEC-Q100 requirements against the Newark/manufacturer listing before automotive release.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliance and lead-free status inferred from :E suffix and DigiKey mobile LPDDR5X listing. AEC-Q100 qualification per Newark listing title. REACH, halogen-free, and conflict-minerals status not stated in provided data.

Data verified on: 2026-09-02 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Micron Technology MT62F512M64D2CZ-023FAUT:E MT62F512M64D2CZ-023FAAT:E MT62F512M64D2CZ-023 AAT:E MT62F512M64D2CZ-023 AIT:E LPDDR5X LPDDR5 SDRAM DRAM LVSTL 0.5 561-TFBGA BGA AEC-Q100 RoHS JEDEC low-power memory standard mobile DRAM automotive ADAS smartphone main memory edge AI inference data rate 4266 Mbps/pin 32 Gbit memory density 64-bit memory organization
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