MW7IC2040GNR1 - 4W RF LDMOS PA, 1.8-1.99 GHz | NXP
부품 번호: MW7IC2040GNR1 ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $32.5 | $32.50 |
| 10 | $28.95 | $289.50 |
| 100 | $24.4 | $2,440.00 |
| 500 | $20.85 | $10,425.00 |
| 1,000 | $17.5 | $17,500.00 |
MW7IC2040GNR1 개요
An RF power amplifier (RF PA) is the final active stage in a wireless transmitter that boosts a low-level modulated RF signal to a transmission power level suitable for radiation by an antenna. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant transistor technology for sub-3 GHz high-power applications because it offers a compelling trade-off of gain, efficiency, ruggedness, and thermal performance versus GaAs or SiGe alternatives. Within the cellular base-station signal chain, the RF PA sits between the driver amplifier / predistortion block and the duplexer/filter network.
Key specifications include 4 W CW output power (P1dB class), 23.5 dB small-signal gain at 1.99 GHz, 50 ohm nominal input/output impedance, and on-chip matching that eliminates the need for external baluns or complex matching networks. The MW7IC2040GNR1 also features integrated bias sequencing support and ESD protection. Typical gain flatness across the 1805-1990 MHz cellular bands is well-suited for multi-band W-CDMA and GSM/EDGE base-station lineups.
The MW7IC2040 family uses a two-stage LDMOS architecture on a single die, with on-chip input matching networks optimized for the 1.8-2.0 GHz bands. Internal stabilization networks and bias circuits simplify PCB design, while the plastic overmold TO-270 package provides low thermal resistance suitable for base-station air-cooled environments with adequate heatsinking.
Typical applications include W-CDMA and GSM/EDGE cellular base-station driver and final-stage PAs, multi-carrier power amplifier lineups, and broadband RF transmitters in the 1805-1990 MHz cellular bands. The wideband on-chip matching allows a single part to cover both the 1805-1880 MHz DCS/EDGE band and the 1930-1990 MHz W-CDMA band with no external tuning.
When designing with this device, provide adequate copper area or an external heatsink because the device dissipates 15-20 W of heat at 4 W RF output. Decouple the supply with low-ESR ceramic and bulk capacitors near the drain leads, and keep RF traces short and isolated from the supply rails.
This page synthesizes distributor pricing, drop-in family variants (MW7IC2040NR1, MW7IC2040NBR1), and practical base-station PA design notes not aggregated in the manufacturer datasheet alone.
드롭인 대체품: MW7IC2040GNR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MW7IC2040GNR1 (동일 폼 팩터 및 풋프린트) — 차이점: Mounting Type, Technology, Frequency Range, Package / Case, RF Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MW7IC2040NR1
✅ 드롭인✓ 재고 있음
$24.2 / 개
데이터시트 보기 →MW7IC2040NBR1
✅ 드롭인✓ 재고 있음
$15.2 / 개
데이터시트 보기 →MW7IC2240NR1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$13.16 / 개
데이터시트 보기 →MW7IC930GNR1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MW7IC2040GNR1 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) |
| Part Family | MW7IC2040 (NR1 / GNR1 / NBR1) |
| Device Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 1805 MHz to 1990 MHz |
| Output Power (CW) | 4 W typical |
| Power Supply Voltage | 24 V to 32 V (28 V nominal) |
| 대기 전류 | 75 mA (typical, per web data) |
| Small-Signal Gain | 23.5 dB (typical at 1.99 GHz, per web data) |
| RF Type | General Purpose / Cellular Base Station PA |
| Modulation Support | W-CDMA, GSM/EDGE, multi-carrier cellular |
| On-Chip Matching | Yes (input/output 50 ohm) |
| Number of Stages | 2 (multi-stage integrated) |
| Technology | LDMOS (Laterally Diffused MOS) |
| 패키지 / 케이스 | TO-270-16 Variant, Gull Wing (TO-270 WBL-16) |
| Package Body Material | Plastic / Epoxy overmold |
| 실장 유형 | Surface Mount (Gull Wing leads) |
| Packaging | Tape & Reel |
| ESD Protection | Yes (integrated) |
| 할로겐 프리 | Not Compliant (per GlobalSpec listing) |
MW7IC2040GNR1 핀 구성
| 핀 1 | RF_IN — RF input (on-chip matched, 50 ohm nominal) |
| 핀 2 | VGG1 — Gate bias, stage 1 |
| 핀 3 | GND — Ground / thermal pad |
| 핀 4 | VGG2 — Gate bias, stage 2 |
| 핀 5 | NC — Not connected (per datasheet) |
| 핀 6 | NC — Not connected (per datasheet) |
| 핀 7 | VDD2 — Drain supply, stage 2 |
| 핀 8 | VDD2 — Drain supply, stage 2 |
| 핀 9 | GND — Ground / thermal pad |
| 핀 10 | NC — Not connected (per datasheet) |
| 핀 11 | NC — Not connected (per datasheet) |
| 핀 12 | VDD1 — Drain supply, stage 1 |
| 핀 13 | VDD1 — Drain supply, stage 1 |
| 핀 14 | NC — Not connected (per datasheet) |
| 핀 15 | NC — Not connected (per datasheet) |
| 핀 16 | RF_OUT — RF output (on-chip matched, 50 ohm nominal) |
안전 동작 영역 (DC) - MW7IC2040GNR1
일반적인 애플리케이션
MW7IC2040GNR1 적합 용도: 6 애플리케이션s: W-CDMA Cellular Base Station PA, GSM/EDGE Base Station Driver PA, Multi-Carrier Power Amplifier Lineup, Broadband RF Transmitter (1.8-2.0 GHz), RF Repeater / Indoor DAS Driver, Cellular Test & Measurement Fixture.
W-CDMA Cellular Base Station PA
The MW7IC2040GNR1 is well-suited as a final-stage PA in W-CDMA base stations operating in the 1930-1990 MHz downlink band, where its 4 W output and 23.5 dB gain directly drive the antenna filter network. The on-chip matching simplifies the PCB layout and minimizes board-to-board variation across production batches. Operated from a 28 V nominal rail, the device's two-stage LDMOS architecture provides the linearity headroom required for W-CDMA modulation, while dissipating 15-20 W that must be sunk through a copper spreader or external heatsink in the air-cooled BTS chassis.
추천
GSM/EDGE Base Station Driver PA
The MW7IC2040GNR1's 1805-1880 MHz coverage matches the DCS/EDGE uplink band exactly, making it a natural fit for GSM/EDGE base-station driver stages. Its 4 W output and on-chip 50-ohm matching allow direct connection to the next stage or antenna filter with minimal external components. For EDGE modulation the device's LDMOS linearity meets the spectral mask requirements without additional linearization, which simplifies the BTS RF lineup compared to GaAs-based alternatives. Thermal management remains the dominant design constraint at continuous CW output.
추천
Multi-Carrier Power Amplifier Lineup
In multi-carrier PA designs the MW7IC2040GNR1's wide 1805-1990 MHz bandwidth lets a single part cover multiple cellular carriers without band switching. The two-stage integrated architecture reduces the BOM count versus discrete LDMOS designs, and the 23.5 dB gain keeps driver-stage gain budgets tractable. Multi-carrier operation increases average dissipation, so the heatsink and airflow design must be sized for ~20 W continuous per device. Per the NXP datasheet, the device's on-chip stabilization supports parallel-device combining for higher-power lineups.
추천
Broadband RF Transmitter (1.8-2.0 GHz)
Outside cellular, the MW7IC2040GNR1 serves broadband RF transmitters that need 4 W output across 1805-1990 MHz, including industrial RF links, telemetry transmitters, and test-stand signal sources. The wideband on-chip matching eliminates external tuning and lets the same PA platform support multiple bands by changing the IF/upconverter chain. Designers should note the device is optimized for cellular modulation formats; continuous-wave test use requires the same thermal management as in BTS deployments.
추천
RF Repeater / Indoor DAS Driver
Distributed antenna systems (DAS) and RF repeaters benefit from the MW7IC2040GNR1's small footprint, integrated matching, and 4 W output in the 1.8-2.0 GHz cellular bands. The TO-270-16 gull-wing package allows automated SMT assembly in high-volume DAS unit production, while the 28 V supply matches existing BTS power-conversion rails. Repeater linearity requirements are typically less stringent than base-station requirements, allowing the device to be used at near-rated output. Adequate copper area for the ~15-20 W dissipation is the main PCB constraint.
추천
Cellular Test & Measurement Fixture
Production test fixtures for cellular handsets and small cells use the MW7IC2040GNR1 as a known-good 1.8-1.99 GHz stimulus source at 4 W output. The integrated matching simplifies fixture calibration, while the wide 1805-1990 MHz coverage exercises both DCS and W-CDMA bands from a single device. Engineers building such fixtures should characterize gain, P1dB, and efficiency at the actual fixture temperature because LDMOS gain drifts with junction temperature. Test-only use also makes the EOL status of this part less critical for long-life instrumentation.
추천
추천 제품 요약
엔지니어링 참조 데이터: MW7IC2040GNR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MW7IC2040NR1 | MW7IC2040NBR1 | MW7IC2240NR1 | MW7IC930GNR1 |
|---|---|---|---|---|---|
| Package | TO-270-16 (WBL-16) Gull Wing | TO-270-16 (WBL-16) Gull Wing - same | TO-270-16 (WBL-16) Gull Wing - same | TO-270-16 (WBL-16) Gull Wing - same | TO-270-16 (WBL-16) Gull Wing - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1805-1990 MHz | 1805-1990 MHz | 1805-1990 MHz | 2300-2400 MHz | 900 MHz cellular band |
| Supply Voltage | 24-32 V | 24-32 V | 24-32 V | 24-32 V | 24-32 V |
| On-Chip Matching | Yes | Yes | Yes | Yes | Yes |
| Lifecycle Status | Obsolete / EOL | Obsolete / EOL | Obsolete / EOL | Obsolete / EOL | Obsolete / EOL |
주요 차별점
- On-chip 50-ohm input/output matching (vs MW7IC930GNR1)
- Wide 1805-1990 MHz bandwidth covers both DCS/EDGE and W-CDMA bands (vs MW7IC2240NR1)
- Two-stage integrated architecture with 23.5 dB gain (vs Discrete two-stage LDMOS designs)
설계 노트
Estimated: at 4 W RF output from a 28 V supply, the device dissipates approximately 15-20 W as heat. The TO-270-16 overmold package requires a copper spreader of at least 30 cm^2 or an external heatsink to keep junction temperature below the rated maximum. In air-cooled base-station chassis, plan for 1-2 m/s airflow across the device flange. For repeater/DAS applications with limited airflow, derate to 2-3 W RF output or upgrade to the A2I25H140GNR1 successor.
Route the VDD1 and VDD2 drain supply pins with separate low-inductance paths to bypass capacitors placed within 3 mm of each pin. Use a continuous ground paddle under the package tied to the chassis ground with multiple vias for low thermal impedance. Keep RF input and output traces on the top layer with the ground plane immediately below, and isolate the bias lines by at least 3x the trace width from the RF traces to prevent feedback and instability.
Do not exceed the 32 V absolute maximum drain supply, or the LDMOS die will suffer irreversible oxide breakdown. Apply gate voltages (VGG1, VGG2) before ramping the drain supply to prevent uncontrolled current surges. The part is obsolete (52% open-market counterfeit risk per GlobalSpec) - verify date code and traceability through authorized aftermarket suppliers such as Rochester Electronics before integrating into new designs.
Use 4-layer FR4 with a continuous top-side ground pour directly under the TO-270-16 paddle; this serves both RF return and thermal conduction. Place 10 uF X7R ceramic bypass capacitors on each drain supply pin within 3 mm, plus a 100 uF aluminum-polymer bulk capacitor at the supply entry point. For W-CDMA modulation, add a small ferrite bead on the VDD lines to suppress drain-supply ringing that could degrade ACLR performance.
규정 준수 정보
Per GlobalSpec listing the part is Not Halogen-Free. RoHS, REACH, lead-free, and conflict-minerals status were not present in the verified web data and should be confirmed against the latest NXP product declaration or contact NXP directly. AEC-Q100 is not applicable for this base-station RF PA.
