RTS5781DL - PCIe 5.0 x4 DRAM-less NVMe SSD Controller | Realtek
부품 번호: RTS5781DL ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.2 | $162.00 |
| 100 | $13.8 | $1,380.00 |
| 500 | $11.95 | $5,975.00 |
| 1,000 | $10.4 | $10,400.00 |
RTS5781DL 개요
A DRAM-less SSD controller is a category of flash storage controller that relies on host memory buffer (HMB) technology instead of an external DRAM cache to manage the flash translation layer (FTL) mapping table. Within the storage hierarchy, DRAM-less controllers sit between host-managed SSD controllers and SATA bridges; in the market taxonomy they are part of the broader PCIe NVMe controller family within the solid-state drive controller segment. The RTS5781DL specifically targets cost-sensitive PCIe Gen5 SSDs where manufacturers want to avoid DRAM cost yet still deliver Gen5 bandwidth.
Key features include PCIe Gen5 x4 host interface, NVMe 2.0 protocol, four NAND channels with 3,600 MT/s maximum toggle/ONFi rate, 4K LDPC error correction, and DRAM-less operation with HMB support. The BGA package is the standard Realtek commercial SSD controller footprint, enabling drop-in PCB layout against other Realtek DL-series controllers (RTS5776DL, RTS5766DL) on existing M.2 NVMe reference designs.
Architecturally, the RTS5781DL leverages Realtek's proven DL-series platform with the PCIe 5.0 physical layer upgrade plus its 4K LDPC engine optimized for next-generation QLC flash. The DRAM-less architecture reduces BOM cost and PCB complexity, shifting the performance bottleneck back to the NAND array as PCIe bandwidth has outpaced NAND throughput for most workloads.
Typical applications include mainstream PCIe 5.0 NVMe SSDs for consumer desktops and laptops, OEM pre-installed boot drives, and value-tier Gen5 storage upgrades. The RTS5781DL enables SSD makers to ship Gen5-class products at price points closer to high-end Gen4 SSDs by eliminating the DRAM component.
When designing with this part, ensure the M.2 PCB layout follows Realtek's reference design guidelines for thermal dissipation - Gen5 controllers at 10 GB/s sustained throughput require careful heatsink integration. Verify NAND compatibility against the Realtek supported-NAND list before committing to volume production.
This page consolidates distributer reference data, drop-in alternatives, and engineering context not found in the manufacturer roadmap PDF alone, giving engineers a fast orientation path from MPN to design-in.
드롭인 대체품: RTS5781DL — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: RTS5781DL (동일 폼 팩터 및 풋프린트) — 차이점: Compliance, Host Interface, NAND Interface Speed, NAND Type Support, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
RTS5776DL
✅ 드롭인✓ 재고 있음
$6.2 / 개
데이터시트 보기 →RTS5782
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →RTS5766DL
✅ 드롭인✓ 재고 있음
$2.2 / 개
데이터시트 보기 →PS5025-E25
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IG5660
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
RTS5781DL 사양
| Host Interface | PCIe 5.0 x4 (NVMe 2.0) |
| Sequential Read (max) | 10,000 MB/s |
| Sequential Write (max) | 10,000 MB/s |
| Random Read IOPS | 1,400K |
| Random Write IOPS | 1,400K |
| NAND Channels | 4 |
| Max NAND Interface Speed | 3,600 MT/s |
| ECC Engine | 4K LDPC |
| DRAM Support | DRAM-less (HMB) |
| NAND Type Support | 3D TLC/QLC |
| Form Factor Target | M.2 2280 NVMe SSD |
| 패키지 | BGA (Realtek DL-series standard) |
| Engineering Sample Status | Sampling (Q1 2025) |
| Production Launch | Expected within one year of sample (2026 timeframe) |
| Compliance | RoHS compliant (per Realtek roadmap) |
RTS5781DL bga (realtek dl-series standard) 핀 구성 가이드
RTS5781DL(bga (realtek dl-series standard) 패키지)의 핀 구성입니다. 핀 번호, 기능, 연결 다이어그램은 제조사 데이터시트에 정의되어 있습니다. 정확한 풋프린트와 솔더링 지침은 해당 문서를 참조하십시오.
다음에 대한 상세 핀아웃 데이터 없음: RTS5781DL.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
RTS5781DL 적합 용도: 6 애플리케이션s: Mainstream PCIe 5.0 NVMe Consumer SSD, OEM Pre-installed Boot Drive, Value-Tier Gen4-to-Gen5 SSD Upgrade, Console and Embedded Storage Module, External Thunderbolt / USB4 SSD Enclosure, Edge and Industrial PCIe 5.0 Storage.
Mainstream PCIe 5.0 NVMe Consumer SSD
The RTS5781DL's 10,000 MB/s sequential read and 10,000 MB/s write targets mainstream PCIe 5.0 NVMe SSDs where consumers want Gen5 bandwidth without the DRAM-cost premium. With four NAND channels running 3,600 MT/s 3D TLC, it comfortably saturates a Gen5 x4 host link in mixed workloads. Unlike DRAM-equipped competitors, it relies on HMB and 4K LDPC to keep BOM and SSD sticker prices comparable to high-end Gen4 drives.
추천
OEM Pre-installed Boot Drive
DRAM-less Gen5 controllers like the RTS5781DL are well-suited to OEM pre-installed boot drives where predictable sequential throughput matters more than extreme random IOPS. The 4-channel architecture pairs efficiently with single-sided M.2 2280 boot-drive layouts using 512 Gb or 1 Tb 3D TLC dies. Its HMB design avoids the need for a DRAM chip on the PCB, simplifying the BOM and shrinking z-height for ultra-thin laptop integration.
추천
Value-Tier Gen4-to-Gen5 SSD Upgrade
The RTS5781DL is an ideal drop-in upgrade for SSD makers transitioning their value-tier Gen4 product lines to Gen5, since it shares the DL-series 4-channel DRAM-less platform and BGA ballout with the RTS5776DL. Existing Gen4 firmware can be ported with Gen5 PHY tuning, dramatically shortening time-to-market. Combined with 3,600 MT/s QLC NAND, it enables cost-effective 2 TB-4 TB consumer SSDs priced near Gen4 equivalents.
추천
Console and Embedded Storage Module
Embedded and console storage modules benefit from the RTS5781DL's compact DRAM-less architecture and 4-channel NAND interface, which keeps the M.2 PCB small while still delivering 10 GB/s for fast game loads. The 4K LDPC engine handles the higher BER of next-gen QLC flash used in dense 2 TB-4 TB embedded modules. HMB leverages console-class system DRAM rather than adding bill-of-material cost to the storage module itself.
추천
External Thunderbolt / USB4 SSD Enclosure
For Thunderbolt 4 / USB4 SSD enclosures that expose an NVMe M.2 slot, the RTS5781DL delivers internal 10 GB/s bandwidth - sufficient headroom over the 40 Gbps external bus (~5 GB/s practical ceiling) for any consumer use case. Its DRAM-less HMB design avoids extra heat inside sealed enclosures, where thermals are often the limiting factor. The 3,600 MT/s NAND rate keeps burst-write performance well above USB4 link limits during typical file copies.
추천
Edge and Industrial PCIe 5.0 Storage
Industrial and edge computing systems adopting PCIe 5.0 backplanes can leverage the RTS5781DL for high-throughput local storage with the reliability of 4K LDPC ECC. Its DRAM-less architecture reduces component count - valuable for vibration-sensitive or long-lifecycle industrial deployments where fewer solder joints mean higher MTBF. Pairing it with industrial-temperature 3D TLC makes it viable for factory automation, edge AI inference boxes, and transportation logging systems.
추천
추천 제품 요약
엔지니어링 참조 데이터: RTS5781DL — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | RTS5776DL | RTS5782 | RTS5766DL | PS5025-E25 | IG5660 |
|---|---|---|---|---|---|---|
| Brand | Realtek | Realtek | Realtek | Realtek | Phison | InnoGrit |
| Package | BGA (Realtek DL-series) | BGA (Realtek DL-series) - same family | BGA (Realtek DL-series) - same family | BGA (Realtek DL-series) - same family | BGA (Phison E25) | BGA (InnoGrit) |
| PCIe Generation | PCIe 5.0 x4 | PCIe 4.0 x4 | PCIe 5.0 x4 | PCIe 4.0 x4 | PCIe 5.0 x4 | PCIe 5.0 x4 |
| DRAM Support | DRAM-less (HMB) | DRAM-less (HMB) | With external DRAM | DRAM-less (HMB) | DRAM-less (HMB) | DRAM-less (HMB) |
| NAND Channels | 4 | 4 | 8 | 4 | 8 | 4 |
| Sequential Read (max) | 10,000 MB/s | ~7,000 MB/s | 14,000 MB/s | ~7,000 MB/s | 10,000 MB/s | 10,000 MB/s |
| Sequential Write (max) | 10,000 MB/s | ~6,500 MB/s | 12,000 MB/s | ~6,500 MB/s | 10,000 MB/s | 9,500 MB/s |
| Max NAND Rate | 3,600 MT/s | 1,600 MT/s | 3,600 MT/s | 1,200 MT/s | 3,600 MT/s | 3,600 MT/s |
| ECC | 4K LDPC | 4K LDPC | 4K LDPC | 4K LDPC | 4K LDPC | 4K LDPC |
주요 차별점
- DRAM-less 10 GB/s Gen5 throughput (vs Phison PS5025-E25)
- Drop-in migration from Gen4 RTS5776DL (vs RTS5776DL)
- 4K LDPC at 3,600 MT/s for QLC (vs Silicon Motion SM2508)
설계 노트
Estimated: at sustained 10 GB/s sequential throughput with PCIe 5.0 x4 utilization, the RTS5781DL controller dissipates approximately 3-4 W under typical workloads. Pair the BGA with at least 2,000 mm² of copper ground plane on the M.2 PCB top layer and integrate a thermal pad or copper foil heatsink in the assembly. Realtek roadmap notes emphasize thermal pad contact area; exceeding 70 C junction temperature risks thermal throttling below the rated sequential ceiling.
Estimated: route the PCIe Gen5 x4 host interface with 90 ohm differential impedance and length-matched within 5 mils across all four lanes. The BGA breakout fanout should use 0.8 mm-pitch micro-vias with reference planes on layers 2 and below. Keep all four NAND channel traces length-matched to their respective CE/RE/DQ pads within 100 mils to maintain 3,600 MT/s eye integrity per Realtek reference design notes.
Do not enable HMB on legacy operating systems that lack NVMe 1.2+ HMB extensions (e.g. Windows 7). Always verify the qualified NAND list from Realtek before committing to volume production - the RTS5781DL's 3,600 MT/s ONFi/toggle support requires specific die revisions of TLC and QLC from qualified vendors. Mixing incompatible NAND grades across the four channels can cause silent data corruption even with 4K LDPC enabled.
규정 준수 정보
RoHS/REACH compliance per Realtek commercial product policy; full AEC-Q100 not applicable to commercial M.2 SSD controllers. Verify halogen-free status with Realtek direct sales.
