SIRA18ADP-T1-GE3 - 30V N-Channel MOSFET | Vishay
부품 번호: SIRA18ADP-T1-GE3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
SIRA18ADP-T1-GE3 개요
A power MOSFET is a voltage-controlled semiconductor used as an electronic switch. In its off state, the device blocks the drain-to-source voltage; in its on state, it provides a low-resistance conducting path. This switching behavior places the SIRA18ADP-T1-GE3 within the discrete semiconductor hierarchy: N-channel MOSFET, power MOSFET, transistor, and semiconductor.
Verified headline features include a 30 V drain-to-source rating, a 20 V gate-to-source rating, 30.6 A drain current at the case, and 14.7 W power dissipation at the case. The TrenchFET Gen IV process and 100% gate-resistance and UIS testing provide useful design context, while the lead-free and halogen-free construction supports environmentally constrained production requirements.
The device is intended for compact, low-voltage switching circuits where the 30 V rating and PowerPAK SO-8 package are appropriate. Its voltage rating makes it relevant to 12 V and lower-voltage rails, although the exact operating limits for pulse, body-diode, avalanche, and layout conditions remain subject to the manufacturer datasheet.
Potential uses include DC-DC converter switches, load switches, motor or solenoid drivers, battery-powered systems, and power-supply control stages. The MOSFET should be selected only after checking DC and switching losses, gate-drive voltage, current pulses, junction temperature, and the PCB copper available for heat dissipation.
For reliable operation, use a gate driver that satisfies the device voltage and timing requirements, keep the power loop compact, and provide thermal copper around the PowerPAK SO-8 leads. This page combines verified manufacturer and distributor information with engineering-oriented selection and design guidance.
드롭인 대체품: SIRA18ADP-T1-GE3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
SIRA18DDP-T1-GE3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SIRA18ADP-T1-GE3 최대 정격 & 전기적 특성
| Drain-Source Voltage | 30 V |
| 게이트-소스 전압 | 20 V |
| Drain Current | 30.6 A at case temperature |
| Power Dissipation | 14.7 W at case temperature |
| Channel Type | N-channel |
| Technology | TrenchFET Gen IV |
| Device Classification | Single MOSFET |
| 실장 유형 | Surface mount |
| 패키지 | PowerPAK SO-8 |
| Package Family | SO-8 surface-mount package family |
| Testing | 100% Rg tested and 100% UIS tested |
| Terminal Finish | Lead-free and halogen-free |
| Manufacturer Product Family | SiRA18ADP |
SIRA18ADP-T1-GE3 핀 구성
| 핀 1 | D — Drain terminal; exact terminal assignment must be confirmed from the SIRA18ADP datasheet drawing |
| 핀 2 | D — Drain terminal; exact terminal assignment must be confirmed from the SIRA18ADP datasheet drawing |
| 핀 3 | S — Source terminal; exact terminal assignment must be confirmed from the SIRA18ADP datasheet drawing |
| 핀 4 | S — Source terminal; exact terminal assignment must be confirmed from the SIRA18ADP datasheet drawing |
| 핀 5 | G — Gate terminal; exact terminal assignment must be confirmed from the SIRA18ADP datasheet drawing |
| 핀 6 | S — Source terminal; exact terminal assignment must be confirmed from the SIRA18ADP datasheet drawing |
| 핀 7 | D — Drain terminal; exact terminal assignment must be confirmed from the SIRA18ADP datasheet drawing |
| 핀 8 | S — Source terminal; exact terminal assignment must be confirmed from the SIRA18ADP datasheet drawing |
안전 동작 영역
일반적인 애플리케이션
SIRA18ADP-T1-GE3 적합 용도: 6 애플리케이션s: 12 V DC-DC Converter Switch, Battery-Powered Load Switch, Motor Driver Output Stage, Compact Power-Supply Control, Industrial Low-Voltage Control Module, Portable Consumer Power Path.
12 V DC-DC Converter Switch
The SIRA18ADP-T1-GE3 fits a compact 12 V converter power stage because its verified 30 V drain-source rating provides nominal voltage headroom and its N-channel MOSFET topology supports efficient high-side or low-side switching. Use it only after confirming RDS(on), output capacitance, gate charge, and switching energy from the complete datasheet. The PowerPAK SO-8 package requires short copper paths and a deliberately sized gate resistor to control switching speed, overshoot, and EMI. Estimated: with a 12 V rail, the static voltage margin is 18 V before accounting for ringing and overshoot, so a 12 V design should not treat the full 30 V rating as available design margin.
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Battery-Powered Load Switch
The SIRA18ADP-T1-GE3 can serve as the switching element in a low-voltage battery load switch where the available source remains below the device's 30 V drain-source rating. The N-channel structure is well suited to compact portable power paths, but battery chemistry, transient suppression, reverse current, and load behavior must be checked before use. A low-side configuration requires the gate to track the battery ground reference correctly; a high-side configuration requires a suitable floating or charge-pump gate driver. The package's thermal performance depends on local copper and the duration of each load event.
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Motor Driver Output Stage
The SIRA18ADP-T1-GE3 is applicable to low-voltage brushed-motor or solenoid-driver output stages when the driven load stays within the verified 30 V rating and its transient behavior remains acceptable. MOSFET switching transitions produce losses and voltage spikes, so motor wiring inductance, body-diode behavior, gate-drive voltage, and clamping strategy are critical. The 30.6 A case-current rating does not establish continuous motor-current capability; copper area, duty cycle, ambient temperature, and switching frequency determine junction temperature. Use the manufacturer SOA and thermal information before selecting it for repetitive inductive loads.
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Compact Power-Supply Control
The SIRA18ADP-T1-GE3 can be considered for isolated, non-isolated, or auxiliary power-converter control paths operating below 30 V. Its TrenchFET Gen IV construction identifies the device as a power MOSFET rather than a small-signal transistor, making it relevant where the switching stage must handle appreciable current. The design still needs verified RDS(on), gate charge, output capacitance, and thermal resistance values before sizing drive current and losses. Keep the gate loop compact, place the driver close to the device, and route drain-current copper to minimize parasitic inductance that can produce damaging turn-off overshoot.
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Industrial Low-Voltage Control Module
The SIRA18ADP-T1-GE3 is suitable for industrial control modules when the control bus is a low-voltage power rail and the MOSFET is used for load distribution, relay excitation, or auxiliary switching. Industrial environments can contain inductive and capacitive transients, so the 30 V rating must include cable transients and reflected overshoot rather than only the nominal supply. Confirm operating temperature, avalanche limits, and isolated-system grounding from the full datasheet. A robust design uses local input capacitance, controlled gate rise and fall times, and a defined fault strategy for overcurrent or short-circuit events.
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Portable Consumer Power Path
The SIRA18ADP-T1-GE3 may be used in portable equipment for switched battery rails, display backlight paths, or small peripheral power domains where the voltage remains under the verified 30 V rating. Its surface-mount PowerPAK SO-8 format supports compact assembly, while the N-channel device can provide efficient low-side switching. Designers should verify quiescent behavior of the overall solution, not infer it from the MOSFET rating alone. Compare the complete datasheet for RDS(on), gate charge, capacitance, and thermal limits, and use a defined latch-off or current-limit strategy if the load can short.
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추천 제품 요약
엔지니어링 참조 데이터: SIRA18ADP-T1-GE3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | SIRA18DDP-T1-GE3 |
|---|---|---|
| Brand | Vishay Intertechnology | Vishay Intertechnology |
| Package | PowerPAK SO-8 | PowerPAK SO-8 |
| Drain-Source Voltage | 30 V | 30 V |
| Channel Type | N-channel | N-channel |
| Drain Current at Case | 30.6 A | 40 A |
| Power Dissipation at Case | 14.7 W | 17 W |
주요 차별점
- Verified 30.6 A case-current rating (vs SIRA18DDP-T1-GE3)
- TrenchFET Gen IV technology (vs SIRA18DDP-T1-GE3)
- Lead-free and halogen-free construction (vs SIRA18DDP-T1-GE3)
설계 노트
Estimated: using the verified 14.7 W case-power value as an upper thermal design reference, actual allowable dissipation depends on package thermal resistance, PCB copper, ambient temperature, and duty cycle. Do not treat 14.7 W as a design target. Check the manufacturer SOA and thermal data, provide copper on the drain and source terminals, and recalculate junction temperature for the real switching waveform.
Use the exact SIRA18ADP PowerPAK SO-8 footprint and terminal assignments from the Vishay datasheet. Keep the gate trace short, place the gate driver close to the device, and minimize the drain-source commutation loop. Avoid long copper paths between the input capacitor, MOSFET, and load; parasitic inductance in these paths increases turn-off overshoot and EMI.
The 30 V drain-source rating does not by itself permit a 30 V working rail. Include supply tolerance, ringing, motor or cable transients, body-diode behavior, and avalanche requirements in the design. Confirm the 20 V gate-source limit against the driver amplitude and transients, and use a defined gate-resistance value that balances efficiency, EMI, and overvoltage risk.
Calculate conduction and switching loss separately. Estimated: conduction loss can be evaluated as Ids_rms² multiplied by the hot RDS(on), while switching loss requires the datasheet gate charge, output capacitance, driver voltage, and operating frequency. Because RDS(on), gate charge, and output capacitance were not present in the verified excerpts, do not substitute assumed values; obtain them from the manufacturer datasheet before sizing the driver.
규정 준수 정보
The Vishay ordering information identifies SIRA18ADP-T1-GE3 as lead-free and halogen-free. RoHS, REACH, conflict-minerals, and automotive qualification were not explicitly provided in the verified data.
