STL8N60M6 - 600V 8A N-Channel Power MOSFET | STMicroelectronics
부품 번호: STL8N60M6 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.25 | $1.25 |
| 10 | $1.12 | $11.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.87 | $435.00 |
| 1,000 | $0.79 | $790.00 |
STL8N60M6 개요
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current through a semiconductor channel using an electric field, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power management systems, including switch-mode power supplies, DC-DC converters, and motor drives, where they serve as the primary switching elements. The MDmesh M6 series represents ST's latest technology for high-voltage MOSFETs, combining low on-resistance with fast switching to minimize conduction and switching losses.
Key features of the STL8N60M6 include a low gate charge (Qg) of 18 nC typical, which enables fast switching and reduces driver requirements, and a low reverse recovery charge (Qrr) for improved performance in bridge topologies. The device also features a wide operating junction temperature range from -55°C to +150°C, making it suitable for harsh environments. The PowerFLAT 5x6 HV package provides a low thermal resistance of 2.5°C/W (junction-to-case), allowing efficient heat dissipation in high-power applications.
The STL8N60M6 utilizes ST's MDmesh M6 technology, which employs a vertical structure with a deep trench gate to achieve a favorable trade-off between on-resistance and breakdown voltage. This technology reduces the specific on-resistance (RDS(on) x area) compared to previous generations, enabling higher current density and lower conduction losses. The device also incorporates an integrated gate-source ESD protection, enhancing robustness in manufacturing and operation.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters for industrial and consumer electronics. The 600V rating makes it suitable for universal input (85-265V AC) offline power supplies, where it can handle the high voltage stress during switching transients. The low on-resistance and fast switching characteristics contribute to high efficiency, reducing heat generation and improving system reliability.
When designing with the STL8N60M6, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. For optimal thermal performance, solder the exposed pad to a large copper area on the PCB and provide adequate airflow or heatsinking in high-power applications.
드롭인 대체품: STL8N60M6 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
STL8N60M3
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STL8N60M6-EP
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STL8N60M2
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STL8N60M6 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 8 A |
| Continuous Drain Current (ID) at 100°C | 5 A |
| Pulsed Drain Current (IDM) | 32 A |
| On-Resistance (RDS(on)) typical | 0.55 ohm |
| On-Resistance (RDS(on)) max | 0.65 ohm |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Charge (Qg) typical | 18 nC |
| Input Capacitance (Ciss) | 620 pF |
| Output Capacitance (Coss) | 45 pF |
| Reverse Transfer Capacitance (Crss) | 2.5 pF |
| Power Dissipation (PD) at 25°C | 60 W |
| 동작 접합 온도 | -55°C to +150°C |
| 패키지 | PowerFLAT 5x6 HV |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| 할로겐 프리 | Yes |
STL8N60M6 핀 구성
| 핀 1 | G — Gate |
| 핀 2 | S — Source |
| 핀 3 | S — Source |
| 핀 4 | S — Source |
| 핀 5 | D — Drain (exposed pad) |
안전 동작 영역
일반적인 애플리케이션
STL8N60M6 적합 용도: 6 애플리케이션s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Industrial Power Supplies, Solar Inverters.
Switch-Mode Power Supplies (SMPS)
The STL8N60M6 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance. In a typical flyback converter, the MOSFET switches at high frequency to regulate output voltage. The low gate charge (18 nC) enables fast switching, reducing switching losses. The PowerFLAT 5x6 HV package allows compact design with efficient heat dissipation. Compared to older MOSFETs, the MDmesh M6 technology reduces conduction losses by up to 20%, improving overall efficiency. Designers must ensure proper gate drive voltage (10V) and snubber circuits to handle voltage spikes.
추천
Power Factor Correction (PFC)
In PFC circuits, the STL8N60M6 operates in boost converter topology to shape the input current waveform. Its 600V rating handles the high output voltage (typically 400V) with margin. The low reverse recovery charge (Qrr) minimizes losses in continuous conduction mode. The device's fast switching reduces electromagnetic interference (EMI), simplifying filter design. The PowerFLAT package's low thermal resistance (2.5°C/W) allows high power density. For best performance, use a dedicated PFC controller and ensure adequate gate drive current.
추천
LED Lighting Drivers
The STL8N60M6 is suitable for LED drivers, especially in offline applications. It can be used in flyback or buck topologies to regulate LED current. The 600V rating allows direct connection to rectified mains (up to 400V). The low on-resistance reduces power dissipation, improving efficiency and reducing heat sink requirements. The device's fast switching enables high-frequency operation, reducing transformer size. For dimming applications, the MOSFET must handle PWM dimming signals; the low gate charge ensures fast response.
추천
DC-DC Converters
In DC-DC converters, the STL8N60M6 can be used in boost, buck, or flyback topologies. Its 600V rating is suitable for high-voltage input applications, such as photovoltaic inverters or electric vehicle chargers. The low on-resistance minimizes conduction losses, while the low gate charge enables high switching frequencies, reducing inductor size. The PowerFLAT package's exposed pad aids thermal management. For synchronous rectification, the MOSFET's body diode characteristics must be considered.
추천
Industrial Power Supplies
The STL8N60M6 is well-suited for industrial power supplies that require high reliability and efficiency. Its wide operating temperature range (-55°C to +150°C) ensures operation in harsh environments. The device's avalanche ruggedness (if specified) provides robustness against overvoltage transients. In industrial settings, the MOSFET may be used in uninterruptible power supplies (UPS), welding equipment, or motor drives. The low on-resistance reduces heat generation, extending product life.
추천
Solar Inverters
In solar inverters, the STL8N60M6 can be used in DC-DC boost stages to step up the panel voltage to a higher DC bus voltage. Its 600V rating is suitable for systems with up to 400V DC bus. The low on-resistance reduces conduction losses, improving conversion efficiency. The device's fast switching enables high-frequency operation, reducing the size of magnetic components. For maximum power point tracking (MPPT), the MOSFET must handle varying duty cycles; the low gate charge ensures stable operation.
추천
추천 제품 요약
엔지니어링 참조 데이터: STL8N60M6 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | STL8N60M3 | STL8N60M6-EP | STL8N60M2 | IPD60R360P7 | TK8A60W |
|---|---|---|---|---|---|---|
| Package | PowerFLAT 5x6 HV | PowerFLAT 5x6 HV | PowerFLAT 5x6 HV | PowerFLAT 5x6 HV | D2PAK (TO-263) | DPAK (TO-252) |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | Toshiba |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 8 A | 8 A | 8 A | 8 A | 9 A | 8 A |
| On-Resistance (RDS(on)) typical | 0.55 ohm | 0.75 ohm | 0.55 ohm | 0.9 ohm | 0.36 ohm | 0.75 ohm |
| Gate Charge (Qg) typical | 18 nC | 25 nC | 18 nC | 30 nC | 20 nC | 22 nC |
| Power Dissipation (PD) at 25°C | 60 W | 60 W | 60 W | 60 W | 83 W | 40 W |
| Operating Junction Temperature | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -40°C to +150°C | -55°C to +150°C |
주요 차별점
- Lower on-resistance compared to older M3 series (vs STL8N60M3)
- Faster switching due to lower gate charge (vs STL8N60M2)
- Same package and pinout as other STL8N60M6 variants (vs IPD60R360P7)
설계 노트
The STL8N60M6 has a junction-to-case thermal resistance of 2.5°C/W. At maximum power dissipation of 60W, the junction temperature rise is 150°C above case temperature. Ensure adequate heatsinking or PCB copper area to keep the junction temperature below 150°C. For continuous operation at high current, consider using a heatsink or forced air cooling.
Place the gate driver as close to the MOSFET as possible to minimize gate loop inductance. Use a low-ESR ceramic capacitor (e.g., 100nF) between gate and source to suppress ringing. The exposed pad should be soldered to a large copper area for thermal and electrical connection. Add a snubber circuit across drain-source to reduce voltage spikes during switching.
Do not exceed the maximum gate-source voltage of ±25V. Use a gate driver with appropriate voltage (typically 10V) to achieve low on-resistance. Ensure the drain-source voltage does not exceed 600V, especially during transients. Consider avalanche ruggedness for inductive loads; if not specified, add a clamping circuit.
규정 준수 정보
RoHS compliant and halogen-free per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 devices.
