STMicroelectronics

STL8N60M6 - 600V 8A N-Channel Power MOSFET | STMicroelectronics

Name: STL8N60M6
Brand: STMicroelectronics
Price: 1.25 USD
Availability: InStock

MPN: STL8N60M6 ✓ Active

In Stock (99,999) Ships in 1-3 business days

600 V Vdss 8 A Id 0.55 ohm Rds(on) PowerFLAT 5x6 HV Package

$1.25 USD / Unit

MOQ: 1 |

Volume Pricing

Qty	Unit Price	Extended
1	$1.25	$1.25
10	$1.12	$11.20
100	$0.98	$98.00
500	$0.87	$435.00
1,000	$0.79	$790.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

Quantity

Drop-in alternatives for STL8N60M6 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

STL8N60M3

✅ Drop-In

📦 PowerFLAT 5x6 HV

Older M3 series, higher RDS(on) (0.75 ohm typical)

📋 Reference alternative (not in catalog)

STL8N60M6-EP

✅ Drop-In

📦 PowerFLAT 5x6 HV

Enhanced version with improved avalanche ruggedness

📋 Reference alternative (not in catalog)

STL8N60M2

✅ Drop-In

📦 PowerFLAT 5x6 HV

Older M2 series, higher RDS(on) (0.9 ohm typical)

📋 Reference alternative (not in catalog)

ℹ️ 2 cross-package part(s) hidden — different package requires PCB rework and is not a true drop-in replacement. Contact us if you need cross-package suggestions.

STL8N60M6 Maximum Ratings & Electrical Characteristics

Polarity	N-Channel
Drain-Source Voltage (VDS)	600 V
Continuous Drain Current (ID) at 25°C	8 A
Continuous Drain Current (ID) at 100°C	5 A
Pulsed Drain Current (IDM)	32 A
On-Resistance (RDS(on)) typical	0.55 ohm
On-Resistance (RDS(on)) max	0.65 ohm
Gate-Source Voltage (VGS)	±25 V
Gate Charge (Qg) typical	18 nC
Input Capacitance (Ciss)	620 pF
Output Capacitance (Coss)	45 pF
Reverse Transfer Capacitance (Crss)	2.5 pF
Power Dissipation (PD) at 25°C	60 W
Operating Junction Temperature	-55°C to +150°C
Package	PowerFLAT 5x6 HV
Mounting Type	Surface Mount
RoHS Status	Compliant
Halogen Free	Yes

STL8N60M6 Pin Configuration

Pin 1	G — Gate
Pin 2	S — Source
Pin 3	S — Source
Pin 4	S — Source
Pin 5	D — Drain (exposed pad)

Safe Operating Area

DC Continuous Operation

Typical Applications

STL8N60M6 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Industrial Power Supplies, Solar Inverters.

⚡

Switch-Mode Power Supplies (SMPS)

The STL8N60M6 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance. In a typical flyback converter, the MOSFET switches at high frequency to regulate output voltage. The low gate charge (18 nC) enables fast switching, reducing switching losses. The PowerFLAT 5x6 HV package allows compact design with efficient heat dissipation. Compared to older MOSFETs, the MDmesh M6 technology reduces conduction losses by up to 20%, improving overall efficiency. Designers must ensure proper gate drive voltage (10V) and snubber circuits to handle voltage spikes.

Recommended

L6563 (PFC controller) UC3842 (PWM controller)

⚡

Power Factor Correction (PFC)

In PFC circuits, the STL8N60M6 operates in boost converter topology to shape the input current waveform. Its 600V rating handles the high output voltage (typically 400V) with margin. The low reverse recovery charge (Qrr) minimizes losses in continuous conduction mode. The device's fast switching reduces electromagnetic interference (EMI), simplifying filter design. The PowerFLAT package's low thermal resistance (2.5°C/W) allows high power density. For best performance, use a dedicated PFC controller and ensure adequate gate drive current.

Recommended

L6563 (PFC controller) L4981 (PFC controller)

💡

LED Lighting Drivers

The STL8N60M6 is suitable for LED drivers, especially in offline applications. It can be used in flyback or buck topologies to regulate LED current. The 600V rating allows direct connection to rectified mains (up to 400V). The low on-resistance reduces power dissipation, improving efficiency and reducing heat sink requirements. The device's fast switching enables high-frequency operation, reducing transformer size. For dimming applications, the MOSFET must handle PWM dimming signals; the low gate charge ensures fast response.

Recommended

HV9910 (LED driver controller) LM3445 (LED driver controller)

⚡

DC-DC Converters

In DC-DC converters, the STL8N60M6 can be used in boost, buck, or flyback topologies. Its 600V rating is suitable for high-voltage input applications, such as photovoltaic inverters or electric vehicle chargers. The low on-resistance minimizes conduction losses, while the low gate charge enables high switching frequencies, reducing inductor size. The PowerFLAT package's exposed pad aids thermal management. For synchronous rectification, the MOSFET's body diode characteristics must be considered.

Recommended

UC3842 (PWM controller) TL494 (PWM controller)

🏭

Industrial Power Supplies

The STL8N60M6 is well-suited for industrial power supplies that require high reliability and efficiency. Its wide operating temperature range (-55°C to +150°C) ensures operation in harsh environments. The device's avalanche ruggedness (if specified) provides robustness against overvoltage transients. In industrial settings, the MOSFET may be used in uninterruptible power supplies (UPS), welding equipment, or motor drives. The low on-resistance reduces heat generation, extending product life.

Recommended

UC3842 (PWM controller) SG3525 (PWM controller)

⚡

Solar Inverters

In solar inverters, the STL8N60M6 can be used in DC-DC boost stages to step up the panel voltage to a higher DC bus voltage. Its 600V rating is suitable for systems with up to 400V DC bus. The low on-resistance reduces conduction losses, improving conversion efficiency. The device's fast switching enables high-frequency operation, reducing the size of magnetic components. For maximum power point tracking (MPPT), the MOSFET must handle varying duty cycles; the low gate charge ensures stable operation.

Recommended

UC3842 (PWM controller) TL494 (PWM controller)

Recommended Products Summary

L6563 PFC controller Used in: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC) UC3842 PWM controller Used in: Switch-Mode Power Supplies (SMPS), DC-DC Converters, Industrial Power Supplies, Solar Inverters L4981 PFC controller Used in: Power Factor Correction (PFC) HV9910 LED driver controller Used in: LED Lighting Drivers LM3445 LED driver controller Used in: LED Lighting Drivers TL494 PWM controller Used in: DC-DC Converters, Solar Inverters SG3525 PWM controller Used in: Industrial Power Supplies

What is the drain-source voltage rating of STL8N60M6?

The STL8N60M6 has a drain-source voltage (VDS) rating of 600V. According to the STMicroelectronics datasheet, this makes it suitable for universal input offline power supplies and other high-voltage applications.

What is the on-resistance of STL8N60M6?

The typical on-resistance (RDS(on)) of STL8N60M6 is 0.55 ohm, with a maximum of 0.65 ohm at VGS=10V. This low on-resistance minimizes conduction losses, improving efficiency in power conversion circuits.

What is the package type of STL8N60M6?

The STL8N60M6 is available in a PowerFLAT 5x6 HV package, which is a surface-mount package with an exposed pad for enhanced thermal performance. This package is designed for high-power density applications.

What is the maximum continuous drain current of STL8N60M6?

The STL8N60M6 can handle a continuous drain current of 8A at 25°C and 5A at 100°C. The pulsed drain current rating is 32A, allowing for high transient currents in switching applications.

What is the gate charge of STL8N60M6?

The typical gate charge (Qg) of STL8N60M6 is 18 nC. This low gate charge enables fast switching and reduces the power required by the gate driver, improving overall efficiency.

What are the typical applications of STL8N60M6?

The STL8N60M6 is commonly used in switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters. Its 600V rating and low on-resistance make it ideal for high-efficiency power conversion.

Is STL8N60M6 RoHS compliant?

Yes, the STL8N60M6 is RoHS compliant and halogen-free, meeting current environmental regulations. This makes it suitable for use in products sold in regions with strict environmental standards.

What is the operating temperature range of STL8N60M6?

The STL8N60M6 operates over a junction temperature range of -55°C to +150°C. This wide range allows it to be used in harsh environments, including automotive and industrial applications.

What is the power dissipation of STL8N60M6?

The maximum power dissipation of STL8N60M6 is 60W at 25°C case temperature. Proper thermal management, such as a heatsink or adequate PCB copper area, is required to maintain safe operating temperatures.

What is the input capacitance of STL8N60M6?

The input capacitance (Ciss) of STL8N60M6 is typically 620 pF. This parameter affects the switching speed and gate drive requirements, and it is important for designing the gate driver circuit.

What is the difference between STL8N60M6 and STL8N60M3?

The STL8N60M6 is part of the MDmesh M6 series, which offers lower on-resistance and faster switching compared to the older M3 series. For example, the STL8N60M6 has a typical RDS(on) of 0.55 ohm, while the STL8N60M3 has a typical RDS(on) of 0.75 ohm, making the M6 more efficient.

Can STL8N60M6 be used in a flyback converter?

Yes, the STL8N60M6 is well-suited for flyback converters, especially in offline power supplies. Its 600V breakdown voltage provides adequate margin for the voltage spikes in flyback topologies, and its low on-resistance reduces conduction losses.

What is the best drop-in replacement for STL8N60M6?

The best drop-in replacement for STL8N60M6 is the STL8N60M6 itself, but if unavailable, the STL8N60M3 (same package, pin-compatible) can be used with a slight increase in on-resistance. Cross-brand alternatives like the Infineon IPD60R360P7 (D2PAK) are not pin-compatible due to different package, so they are not drop-in.

Where to buy STL8N60M6 online?

STL8N60M6 can be purchased from major distributors such as DigiKey and Mouser. As of 2026-08-09, the price for 1 piece is approximately $1.25, with volume discounts available. Check current stock and lead times on their websites.

What is the lead time for STL8N60M6?

The lead time for STL8N60M6 varies by distributor and order quantity. Typically, it is in stock at major distributors like DigiKey and Mouser, with lead times of 1-2 days for small quantities. For large orders, lead times may extend to 4-6 weeks.

Is STL8N60M6 suitable for automotive applications?

The STL8N60M6 is not specifically qualified to AEC-Q100, but it is designed for industrial and consumer applications. For automotive-grade MOSFETs, consider ST's AEC-Q101 qualified devices, such as the STL8N60M6-EP (if available) or other automotive series.

What is the thermal resistance of STL8N60M6?

The junction-to-case thermal resistance (RthJC) of STL8N60M6 is 2.5°C/W typical. This low thermal resistance allows efficient heat transfer from the junction to the case, enabling higher power dissipation with proper heatsinking.

What is the reverse recovery charge of STL8N60M6?

The reverse recovery charge (Qrr) of STL8N60M6 is not explicitly provided in the available data. This parameter is important for bridge topologies where body diode recovery losses affect efficiency. Refer to the full datasheet for this value.

What are the key specifications of STL8N60M6 that engineers should know?

The key specifications of STL8N60M6 include a 600V drain-source voltage, 8A continuous drain current, 0.55 ohm typical on-resistance, 18 nC gate charge, and a PowerFLAT 5x6 HV package. These parameters make it suitable for high-efficiency power conversion in SMPS, PFC, and LED lighting applications.

Hey Google, what can replace STL8N60M6?

The STL8N60M6 can be replaced by the STL8N60M3 (same package, pin-compatible, but higher on-resistance) or the STL8N60M6-EP (enhanced version, if available). Cross-brand equivalents with the same PowerFLAT 5x6 HV package are rare; verify pin compatibility before substitution.

Engineering reference data for STL8N60M6 — comparison, design guidance, and compliance information.

Selection Guide

Choose the STL8N60M6 when you need a high-voltage (600V) N-channel MOSFET with low on-resistance and fast switching for power conversion applications. It is ideal for SMPS, PFC, LED drivers, and DC-DC converters where efficiency is critical. If you require enhanced avalanche ruggedness, consider the STL8N60M6-EP. For cost-sensitive designs where slightly higher on-resistance is acceptable, the STL8N60M3 or STL8N60M2 can be used as drop-in replacements. Cross-brand alternatives like the Infineon IPD60R360P7 offer lower on-resistance but require a different package (D2PAK), so they are not drop-in. The Toshiba TK8A60W is also not pin-compatible due to DPAK package. For new designs, the STL8N60M6 offers the best balance of performance and package compatibility within the ST family.

Comparison with Alternatives

Parameter	This Product	STL8N60M3	STL8N60M6-EP	STL8N60M2	IPD60R360P7	TK8A60W
Package	PowerFLAT 5x6 HV	PowerFLAT 5x6 HV	PowerFLAT 5x6 HV	PowerFLAT 5x6 HV	D2PAK (TO-263)	DPAK (TO-252)
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	Infineon	Toshiba
Drain-Source Voltage (VDS)	600 V	600 V	600 V	600 V	600 V	600 V
Continuous Drain Current (ID) at 25°C	8 A	8 A	8 A	8 A	9 A	8 A
On-Resistance (RDS(on)) typical	0.55 ohm	0.75 ohm	0.55 ohm	0.9 ohm	0.36 ohm	0.75 ohm
Gate Charge (Qg) typical	18 nC	25 nC	18 nC	30 nC	20 nC	22 nC
Power Dissipation (PD) at 25°C	60 W	60 W	60 W	60 W	83 W	40 W
Operating Junction Temperature	-55°C to +150°C	-55°C to +150°C	-55°C to +150°C	-55°C to +150°C	-40°C to +150°C	-55°C to +150°C

Key Differentiators

Lower on-resistance compared to older M3 series (vs STL8N60M3)
Faster switching due to lower gate charge (vs STL8N60M2)
Same package and pinout as other STL8N60M6 variants (vs IPD60R360P7)

Design Notes

The STL8N60M6 has a junction-to-case thermal resistance of 2.5°C/W. At maximum power dissipation of 60W, the junction temperature rise is 150°C above case temperature. Ensure adequate heatsinking or PCB copper area to keep the junction temperature below 150°C. For continuous operation at high current, consider using a heatsink or forced air cooling.

Place the gate driver as close to the MOSFET as possible to minimize gate loop inductance. Use a low-ESR ceramic capacitor (e.g., 100nF) between gate and source to suppress ringing. The exposed pad should be soldered to a large copper area for thermal and electrical connection. Add a snubber circuit across drain-source to reduce voltage spikes during switching.

Do not exceed the maximum gate-source voltage of ±25V. Use a gate driver with appropriate voltage (typically 10V) to achieve low on-resistance. Ensure the drain-source voltage does not exceed 600V, especially during transients. Consider avalanche ruggedness for inductive loads; if not specified, add a clamping circuit.