1EDN7136GXTMA1 vs 1EDN7116GXTMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7136GXTMA1 disebabkan oleh Infineon dan 1EDN7116GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 1EDN7136GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Low-side gate driver IC | — |
| Configuration | Single channel, non-inverting | — |
| Peak Source Current | 4 A | 2 A (typ) |
| Peak Sink Current | 8 A | 4 A (typ) |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET | — |
| Input Logic | TTL/CMOS compatible | — |
| UVLO | Yes (VDD under-voltage lockout) | Yes (VCC and gate-rail monitored) |
| Propagation Delay | Sub-nanosecond class | — |
| Kemasan | PG-VSON-10-4 (leadless, thermal pad) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40 C to +125 C | — |
| Aras MSL | [DATA_NEEDED: MSL level] | MSL3 |
| Status RoHS | Compliant | Compliant |
| Lead-free | Yes | — |
| Input Voltage (VDD) | [DATA_NEEDED: VDD range V] | — |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) | — |
| Fungsi | — | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| Gambaran Suhu Operasi | — | -40 °C to +125 °C |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |