1EDN7136GXTMA1 vs 1EDN7116GXTMA1 比較
詳細並排比較 1EDN7136GXTMA1 由 Infineon 與 1EDN7116GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1EDN7136GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Type | Low-side gate driver IC | — |
| Configuration | Single channel, non-inverting | — |
| Peak Source Current | 4 A | 2 A (typ) |
| Peak Sink Current | 8 A | 4 A (typ) |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET | — |
| Input Logic | TTL/CMOS compatible | — |
| UVLO | Yes (VDD under-voltage lockout) | Yes (VCC and gate-rail monitored) |
| Propagation Delay | Sub-nanosecond class | — |
| 封裝 | PG-VSON-10-4 (leadless, thermal pad) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40 C to +125 C | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | MSL3 |
| RoHS 狀態 | Compliant | Compliant |
| Lead-free | Yes | — |
| Input Voltage (VDD) | [DATA_NEEDED: VDD range V] | — |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) | — |
| 功能 | — | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| 工作溫度範圍 | — | -40 °C to +125 °C |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |