A3PE3000L-FG896 vs A3PE3000L-1FGG896 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci A3PE3000L-FG896 disebabkan oleh Microchip Technology dan A3PE3000L-1FGG896 disebabkan oleh Microchip Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Microchip Technology
A3PE3000L-FG896 - ProASIC3L Low Power FPGA 620 I/O | Microchip
A3PE3000L-FG896 ✓ AktifMicrochip Technology
A3PE3000L-1FGG896 - 3M-Gate ProASIC3L Flash FPGA | Microchip
A3PE3000L-1FGG896 ✓ AktifPengandingan Spesifikasi
| Parametr | A3PE3000L-FG896 | A3PE3000L-1FGG896 |
|---|---|---|
| Merek | Microchip Technology | Microchip Technology |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | ProASIC3L | ProASIC3L |
| System Gates | 3,000,000 | 3000000 |
| User I/O | 620 | 620 |
| Logic Cells | 75,264 | 75264 |
| Core Voltage | 1.2 V to 1.5 V | 1.2 V (supports 1.2 V to 1.5 V) |
| Technology | 130 nm nonvolatile flash | — |
| Configuration Memory | Nonvolatile flash (single-chip, Instant On) | Nonvolatile flash (single-chip) |
| Kemasan | 896-ball FBGA | 896-ball FBGA (FGG896), 1.00 mm pitch |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Low Power Feature | Flash*Freeze technology | — |
| Max Operating Frequency | [DATA_NEEDED: max operating frequency] | — |
| Embedded Memory | [DATA_NEEDED: embedded memory size] | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Operating Temperature Suffix | Commercial (unmarked suffix; -I grade is industrial) | — |
| Status RoHS | unknown | — |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Programmability | In-system reprogrammable | — |
| Total Bits of RAM | — | [DATA_NEEDED: Total embedded RAM bits] |
| I/O Voltage | — | As low as 1.2 V |
| Speed Grade | — | -1 |
| Process Technology | — | 130 nm flash |
| Special Features | — | Flash*Freeze technology |
| Packaging | — | Tray |
| Terminal Pitch | — | 1.00 mm |
| Technology Base | — | CMOS flash |
| Dynamic Power Reduction vs ProASIC3 | — | Approx. 40% |
| Static Power Reduction vs ProASIC3 | — | Approx. 50% |