BSC010N04LSATMA1 vs BSC022N04LS6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC010N04LSATMA1 disebabkan oleh Infineon dan BSC022N04LS6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC010N04LSATMA1 BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC010N04LSATMA1 BSC022N04LS6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Drain-Source Breakdown Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) Max +/- 20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 38 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) Max @ VGS=10V 1.0 mOhm —
On-Resistance RDS(on) Test Condition VGS = 10 V, ID = 50 A —
Gate Threshold Voltage VGS(th) Typ 2 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation (Tc=25C) 139 W —
Power Dissipation (Ta=25C) 2.5 W —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-TDSON-8 FL (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-1)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
RoHS / Halogen-Free RoHS compliant, halogen-free —
Technology OptiMOS 5 OptiMOS™ 6 (N-channel trench)
Avalanche Rated 100% avalanche tested —
Manufacturer Infineon Technologies Infineon Technologies
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Ta — 27 A
Continuous Drain Current (ID) at Tc — 100 A
Maximum Pulsed Drain Current (IDM) — 139 A
On-Resistance RDS(on) max — 2.2 mOhm at VGS=10 V
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 79 W
Channel Type — N-Channel
Kiraan Pin — 8
Suhu Operasi — -55 C to +175 C (junction)
Status RoHS — Compliant

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