BSC010N04LSATMA1 vs BSC022N04LS6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC010N04LSATMA1 sa pamamagitan ng Infineon at BSC022N04LS6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC010N04LSATMA1 BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 ✓ Nakahanda
Infineon
BSC022N04LS6ATMA1 BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC010N04LSATMA1 BSC022N04LS6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Transistor Polarity N-Channel —
Drain-Source Breakdown Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) Max +/- 20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 38 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) Max @ VGS=10V 1.0 mOhm —
On-Resistance RDS(on) Test Condition VGS = 10 V, ID = 50 A —
Gate Threshold Voltage VGS(th) Typ 2 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation (Tc=25C) 139 W —
Power Dissipation (Ta=25C) 2.5 W —
Hanay ng Temperature na Operasyon -55C to +150C —
Packhaging PG-TDSON-8 FL (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-1)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 —
RoHS / Halogen-Free RoHS compliant, halogen-free —
Technology OptiMOS 5 OptiMOS™ 6 (N-channel trench)
Avalanche Rated 100% avalanche tested —
Manufacturer Infineon Technologies Infineon Technologies
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Ta — 27 A
Continuous Drain Current (ID) at Tc — 100 A
Maximum Pulsed Drain Current (IDM) — 139 A
On-Resistance RDS(on) max — 2.2 mOhm at VGS=10 V
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 79 W
Channel Type — N-Channel
Bilang ng Pin — 8
Temperature na Operasyon — -55 C to +175 C (junction)
Tindminan RoHS — Compliant

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