BSC014N04LSIATMA1 vs BSC022N04LS6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N04LSIATMA1 disebabkan oleh Infineon dan BSC022N04LS6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC014N04LSIATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench, thin-wafer) | OptiMOS™ 6 (N-channel trench) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Power Dissipation (PD, Ta) | 2.5 W | — |
| Gambaran Suhu Operasi | -55 C to +150 C | — |
| Kemasan | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | SuperSO8 5x6 (PG-TDSON-8-1) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Tradename | OptiMOS | — |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at Ta | — | 27 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Pulsed Drain Current (IDM) | — | 139 A |
| On-Resistance RDS(on) max | — | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 79 W |
| Channel Type | — | N-Channel |
| Kiraan Pin | — | 8 |
| Suhu Operasi | — | -55 C to +175 C (junction) |