BSC014N04LSIATMA1 vs BSC022N04LS6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC014N04LSIATMA1 sa pamamagitan ng Infineon at BSC022N04LS6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
BSC022N04LS6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC014N04LSIATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench, thin-wafer) | OptiMOS™ 6 (N-channel trench) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Power Dissipation (PD, Ta) | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | — |
| Packhaging | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | SuperSO8 5x6 (PG-TDSON-8-1) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Tradename | OptiMOS | — |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at Ta | — | 27 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Pulsed Drain Current (IDM) | — | 139 A |
| On-Resistance RDS(on) max | — | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 79 W |
| Channel Type | — | N-Channel |
| Bilang ng Pin | — | 8 |
| Temperature na Operasyon | — | -55 C to +175 C (junction) |