BSC014N04LSTATMA1 vs BSZ017NE2LS5IATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N04LSTATMA1 disebabkan oleh Infineon dan BSZ017NE2LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC014N04LSTATMA1 BSZ017NE2LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC014N04LSTATMA1 —
Technology OptiMOS 5 (N-Channel Trench) —
Drain-Source Voltage (VDS) 40 V 25 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W 2.1 W
Power Dissipation (TC) 115 W 50 W
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan PG-TDSON-8 FL (SuperSO8 5x6) PG-TSDSON-8-FL (8-PowerTDFN)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Status RoHS Compliant Compliant
Aras MSL MSL1 —
Lead-Free Yes —
Polarity — N-Channel
Continuous Drain Current (TA) — 27 A
Continuous Drain Current (TC) — 40 A
On-Resistance RDS(on) @ VGS=10V — 1.7 mΩ
On-Resistance Test Current — 20 A
Gate-Source Voltage (VGS) Rating — ±16 V
Gate Threshold Voltage VGS(th) — 2 V @ 250 µA
Total Gate Charge Qg — 30 nC @ VGS=10V
Input Capacitance Ciss — 2000 pF @ VDS=12V
Suhu Hubungan Operasi — -55°C to +150°C
Series / Family — OptiMOS 5 25V

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