BSC014NE2LSIATMA1 vs BSC010NE2LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014NE2LSIATMA1 disebabkan oleh Infineon dan BSC010NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC014NE2LSIATMA1 BSC010NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS 25V) OptiMOS (Trench)
Drain-Source Voltage (VDS) 25 V 25 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Ta) 33 A —
Continuous Drain Current (ID, Tc) [DATA_NEEDED: Tc condition rating] —
Pulsed Drain Current (IDM, Tc) 100 A —
On-State Resistance RDS(on) 1.4 mOhm (typ) at VGS = 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 74 W —
Suhu Hubungan Operasi -55 °C to +150 °C —
Kemasan PG-TDSON-8-7 (SuperSO8) PG-TDSON-8-7 (TDSON-8 EP)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Series / Family — OptiMOS 25V
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Configuration — Single N-Channel
Gambaran Suhu Operasi — -55C to +150C (TJ)
Kiraan Pin — 8
Gate Drive — Logic-level compatible
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

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