BSC014NE2LSIATMA1 vs BSZ0901NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014NE2LSIATMA1 disebabkan oleh Infineon dan BSZ0901NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC014NE2LSIATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS 25V) OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) 25 V 30 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Ta) 33 A —
Continuous Drain Current (ID, Tc) [DATA_NEEDED: Tc condition rating] —
Pulsed Drain Current (IDM, Tc) 100 A —
On-State Resistance RDS(on) 1.4 mOhm (typ) at VGS = 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] [DATA_NEEDED: total gate charge Qg]
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 74 W —
Suhu Hubungan Operasi -55 °C to +150 °C —
Kemasan PG-TDSON-8-7 (SuperSO8) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Kiraan Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Gambaran Suhu Operasi — -55 C to +150 C (typical MOSFET range)
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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