BSC019N08NS5ATMA1 vs BSC014NE2LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N08NS5ATMA1 disebabkan oleh Infineon dan BSC014NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC019N08NS5ATMA1 BSC014NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Technology OptiMOS 5 (N-channel trench) N-Channel MOSFET (OptiMOS 25V)
Polarity N-Channel —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TA=25C 28 A —
Continuous Drain Current (ID) at TC=25C 237 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 1.9 mOhm —
Gate Threshold Voltage VGS(th) typ 3.0 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 214 W —
Gambaran Suhu Operasi -55 C to +150 C —
Kemasan PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Drain-Source Voltage (VDS) — 25 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Ta) — 33 A
Continuous Drain Current (ID, Tc) — [DATA_NEEDED: Tc condition rating]
Pulsed Drain Current (IDM, Tc) — 100 A
On-State Resistance RDS(on) — 1.4 mOhm (typ) at VGS = 10 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ at VGS=10V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 74 W
Suhu Hubungan Operasi — -55 °C to +150 °C
Lead-Free — Yes

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