BSC019N08NS5ATMA1 vs BSC014NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSC019N08NS5ATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveInfineon
BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
BSC014NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N08NS5ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Technology | OptiMOS 5 (N-channel trench) | N-Channel MOSFET (OptiMOS 25V) |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TA=25C | 28 A | β |
| Continuous Drain Current (ID) at TC=25C | 237 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation (TA=25C) | 3 W | β |
| Power Dissipation (TC=25C) | 214 W | β |
| Operating Temperature Range | -55 C to +150 C | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Drain-Source Voltage (VDS) | β | 25 V |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID, Ta) | β | 33 A |
| Continuous Drain Current (ID, Tc) | β | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | β | 100 A |
| On-State Resistance RDS(on) | β | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 74 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| Lead-Free | β | Yes |