BSC020N03LSGATMA1 vs BSC050N03LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC020N03LSGATMA1 disebabkan oleh Infineon dan BSC050N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC020N03LSGATMA1 BSC050N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.2 V (typical range, per datasheet) [DATA_NEEDED: VGS(th) typical/min/max]
On-State Resistance (RDS(on)) at VGS=10V approximately 2.0 mOhm —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc=25C 96 W —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55 C to +150 C
Kemasan / Case PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020, per Infineon datasheet) 1
Part Number — BSC050N03LSGATMA1
Technology — OptiMOS 3 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 80 A
Continuous Drain Current (ID) at Ta — 18 A
On-State Resistance (RDS(on)) Max at VGS=10V — 5 mOhm
Power Dissipation (PD) at Tc — 50 W
Power Dissipation (PD) at Ta — 2.5 W
Kemasan — PG-TDSON-8-5 (SuperSO8 5x6 mm)
Channel Type — N-Channel

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