BSC027N10NS5ATMA1 vs BSC040N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N10NS5ATMA1 disebabkan oleh Infineon dan BSC040N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC027N10NS5ATMA1 BSC040N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC027N10NS5ATMA1 BSC040N08NS5ATMA1
Technology OptiMOS 5 (100V) OptiMOS 5 (N-channel trench MOSFET)
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 80 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 194 A —
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 214 W —
Kemasan PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) —
Continuous Drain Current (ID, Tc=25C) — 100 A
Maximum Drain Current (ID, Tc=25C, package-limited) — 121 A
On-Resistance (RDS(on) max, VGS=10V) — 4 mOhm
Power Dissipation (Ta=25C, 1in² PCB) — 2.5 W
Power Dissipation (Tc=25C) — 104 W
Suhu Hubungan Operasi — -55 C to +175 C
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Primary Application — Synchronous rectification in telecom and server power supplies

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