BSC036NE7NS3GATMA1 vs IPB020NE7N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC036NE7NS3GATMA1 disebabkan oleh Infineon dan IPB020NE7N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC036NE7NS3GATMA1 IPB020NE7N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 75 V 75 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm —
Gate Threshold Voltage (VGS(th) typ) 2.6 V —
Total Gate Charge (Qg typ @ VGS=10V) 45 nC —
Rise Time (tr typ) 13 ns —
Fall Time (tf typ) 11 ns —
Power Dissipation (PD max, Tc=25C) 156 W —
Power Dissipation (Ta=25C) 2.5 W —
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W —
Gambaran Suhu Operasi -55C to +175C -55C to +175C (junction)
Kemasan PG-TDSON-8-7 (5x6 mm) PG-TO263-3 (D²PAK, TO-263AB)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS ROHS3 Compliant Compliant
Aras MSL 1 [DATA_NEEDED: MSL rating]
Part Number — IPB020NE7N3GATMA1
Technology — OptiMOS 3 N-Channel Power MOSFET
Polarity — N-Channel
Continuous Drain Current (ID) at Tc — 120 A
Power Dissipation (PD) at Tc — 300 W
On-State Resistance RDS(on) — 2.0 mΩ typical (per part number code)
Configuration — Single
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Lead-Free — Yes
Avalanche Rated — Yes (per OptiMOS 3 family datasheet)

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