BSC050N04LSGATMA1 vs BSC011N03LSTATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC050N04LSGATMA1 disebabkan oleh Infineon dan BSC011N03LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC050N04LSGATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | NRND |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | Trench MOSFET |
| Kemasan | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 39 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 72 nC |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 115 W |
| Suhu Hubungan Operasi | — | -55C to +150C |
| Configuration | — | Single with built-in diode |