BSC052N08NS5ATMA1 vs BSC040N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC052N08NS5ATMA1 disebabkan oleh Infineon dan BSC040N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC052N08NS5ATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 | BSC040N08NS5ATMA1 |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tc) | 95 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | — |
| Total Power Dissipation (Tc) | 83 W | — |
| Total Power Dissipation (Ta) | 2.5 W | — |
| Suhu Hubungan Operasi | -55C to +150C | -55 C to +175 C |
| Kemasan | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-7 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited) | 1 |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | — | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | — | 4 mOhm |
| Power Dissipation (Ta=25C, 1in² PCB) | — | 2.5 W |
| Power Dissipation (Tc=25C) | — | 104 W |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Primary Application | — | Synchronous rectification in telecom and server power supplies |