BSC054N04NSGATMA1 vs ISC058N04NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC054N04NSGATMA1 disebabkan oleh Infineon dan ISC058N04NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC054N04NSGATMA1 ISC058N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC054N04NSGATMA1 —
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Tc=25C 81 A —
Continuous Drain Current (ID) at Ta=25C 17 A —
On-Resistance RDS(on) max at VGS=10V 5.4 mOhm —
Gate-Source Voltage (VGS) max ±20 V —
Power Dissipation at Tc=25C 57 W —
Power Dissipation at Ta=25C 2.5 W —
Gambaran Suhu Operasi -55C to +150C -55C to +175C
Kemasan PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Gate Drive Voltage (recommended) 10 V —
Lead-Free Reflow Yes —
Product Family — OptiMOS 5 40V Normal Level
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

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