BSC070N10NS5ATMA1 vs BSC027N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC070N10NS5ATMA1 disebabkan oleh Infineon dan BSC027N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC070N10NS5ATMA1 BSC027N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Technology OptiMOS 5 (N-channel trench) OptiMOS 5 (100V)
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TC=25C 80 A —
RDS(on) max @ VGS=10V 7 mOhm —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Power Dissition at TC=25C (Ptot) 83 W —
Power Dissipation at TA=25C 2.5 W —
Gambaran Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TSON-8-3 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Lead-Free Yes —
Typical Application Synchronous rectification in SMPS —
Manufacturer — Infineon Technologies
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Gambaran Suhu Operasi — [DATA_NEEDED: Tj min/max]
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

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