BSC076N06NS3GATMA1 vs BSC066N06NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC076N06NS3GATMA1 disebabkan oleh Infineon dan BSC066N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC076N06NS3GATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 60 V trench-gate |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 50 A | — |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | 1.7 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | 26 nC (typ) |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (unlimited) | 1 |
| RoHS Compliance | Compliant | — |
| Boson Bebas | Yes (per Infineon product page) | — |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Suhu Hubungan Operasi | — | -55°C to +150°C |
| Status RoHS | — | Compliant |