BSC076N06NS3GATMA1 vs BSC066N06NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC076N06NS3GATMA1 sa pamamagitan ng Infineon at BSC066N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 ✓ Nakahanda
Infineon
BSC066N06NSATMA1 BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΩ OptiMOS | Infineon

BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΩ OptiMOS | Infineon

BSC066N06NSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC076N06NS3GATMA1 BSC066N06NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET OptiMOS 5 60 V trench-gate
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ —
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V 1.7 V (typ)
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] 26 nC (typ)
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Hanay ng Temperature na Operasyon -55C to +150C —
Packhaging PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-6 (TDSON EP)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (unlimited) 1
RoHS Compliance Compliant —
Wala sa Halogen Yes (per Infineon product page) —
Continuous Drain Current (ID) at TC=25°C — 64 A
Continuous Drain Current (ID) at TC=100°C — 45 A
Pulsed Drain Current (IDM) — 256 A
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 6.6 mΩ (max)
Power Dissipation (PD) at TC=25°C — 46 W
Power Dissipation (PD) at TA=25°C — 2.5 W
Thermal Resistance, Junction-to-Case (RθJC) — 1.3 °C/W
Temperature ng Junction na Operasyon — -55°C to +150°C
Tindminan RoHS — Compliant

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