BSC0901NSATMA1 vs BSC0901NSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0901NSATMA1 disebabkan oleh Infineon dan BSC0901NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0901NSATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 30V | — |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOS 25V N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Continuous Drain Current (ID) at Ta | 28 A | — |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | — |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | — |
| Avalanche Energy (EAS) | 80 mJ | — |
| Power Dissipation (PD) at Tc | 69 W | 69 W |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55 C to +150 C |
| Kemasan | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Tingkat sensitiviti Air Nama (MSL) | 1 | — |
| Built-in Body Diode | Yes | — |
| Status RoHS | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10V | — | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.2 V max |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Kiraan Pin | — | 8 |
| Aras MSL | — | 1 |
| Boson Bebas | — | Yes |