BSC0901NSATMA1 vs BSC0901NSIATMA1 比較
詳細並排比較 BSC0901NSATMA1 由 Infineon 與 BSC0901NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0901NSATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 30V | — |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOS 25V N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Continuous Drain Current (ID) at Ta | 28 A | — |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | — |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | — |
| Avalanche Energy (EAS) | 80 mJ | — |
| Power Dissipation (PD) at Tc | 69 W | 69 W |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| 工作溫度範圍 | -55C to +150C | -55 C to +150 C |
| 封裝 | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| 濕度敏感等級 (MSL) | 1 | — |
| Built-in Body Diode | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10V | — | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.2 V max |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| 腳位數 | — | 8 |
| MSL 等級 | — | 1 |
| 無鹵素 | — | Yes |