BSC0902NSATMA1 vs BSC047N08NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0902NSATMA1 disebabkan oleh Infineon dan BSC047N08NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0902NSATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Ta) | 24 A | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 48 W | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| RDS(on) @ VGS=10V max | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| RDS(on) @ VGS=4.5V max | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | — |
| Gambaran Suhu Operasi | -55C to +150C (Tj) | -55 °C to +175 °C (Tj) |
| Kemasan | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | JEDEC qualified for target applications | — |
| RoHS Compliance | Compliant (Pb-free lead plating) | — |
| Boson Bebas | Yes, per IEC 61249-2-21 | — |
| Avalanche Rated | Yes (100% avalanche tested) | 100% tested |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC047N08NS3GATMA1 |
| Technology | — | OptiMOS™ 3 (N-channel trench) |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-Resistance RDS(on) max | — | 4.7 mOhm at VGS=10 V |
| Power Dissition (Tc) | — | 125 W |
| Gate Threshold Voltage (VGS th) | — | Normal level (typ 1.7 V) |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |