BSC0902NSATMA1 vs BSC047N08NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC0902NSATMA1 sa pamamagitan ng Infineon at BSC047N08NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon
BSC047N08NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC0902NSATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Ta) | 24 A | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 48 W | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| RDS(on) @ VGS=10V max | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| RDS(on) @ VGS=4.5V max | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (Tj) | -55 °C to +175 °C (Tj) |
| Packhaging | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | JEDEC qualified for target applications | — |
| RoHS Compliance | Compliant (Pb-free lead plating) | — |
| Wala sa Halogen | Yes, per IEC 61249-2-21 | — |
| Avalanche Rated | Yes (100% avalanche tested) | 100% tested |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC047N08NS3GATMA1 |
| Technology | — | OptiMOS™ 3 (N-channel trench) |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-Resistance RDS(on) max | — | 4.7 mOhm at VGS=10 V |
| Power Dissition (Tc) | — | 125 W |
| Gate Threshold Voltage (VGS th) | — | Normal level (typ 1.7 V) |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |