BSC0902NSATMA1 vs BSC047N08NS3GATMA1 比較
詳細並排比較 BSC0902NSATMA1 由 Infineon 與 BSC047N08NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0902NSATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Ta) | 24 A | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 48 W | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| RDS(on) @ VGS=10V max | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| RDS(on) @ VGS=4.5V max | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | — |
| 工作溫度範圍 | -55C to +150C (Tj) | -55 °C to +175 °C (Tj) |
| 封裝 | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-1 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | JEDEC qualified for target applications | — |
| RoHS Compliance | Compliant (Pb-free lead plating) | — |
| 無鹵素 | Yes, per IEC 61249-2-21 | — |
| Avalanche Rated | Yes (100% avalanche tested) | 100% tested |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC047N08NS3GATMA1 |
| Technology | — | OptiMOS™ 3 (N-channel trench) |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-Resistance RDS(on) max | — | 4.7 mOhm at VGS=10 V |
| Power Dissition (Tc) | — | 125 W |
| Gate Threshold Voltage (VGS th) | — | Normal level (typ 1.7 V) |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |